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公开(公告)号：US08808063B2
公开(公告)日：2014-08-19
申请号：US13308526
申请日：2011-11-30
IPC分类号： B24B21/18
CPC分类号： B24B53/001 , B24B37/04 , B24B37/046 , B24B53/017 , C25D17/001 , H01L21/02074 , H01L21/304 , H01L21/67051
摘要： A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.
摘要翻译： 提供了去除抛光副产物的方法和抛光装置。 该方法包括将正极安装在研磨台板的中心和负极上，在研磨台板的边缘上，在金属抛光处理完成之后，在正极和负极之间施加电压，并旋转抛光 压板并用去离子水或化学清洁溶液冲洗抛光垫以除去在抛光过程中形成的抛光副产物。 离心力和电动势的组合增加了抛光副产物的去除率。
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公开(公告)号：US20120309278A1
公开(公告)日：2012-12-06
申请号：US13308526
申请日：2011-11-30
CPC分类号： B24B53/001 , B24B37/04 , B24B37/046 , B24B53/017 , C25D17/001 , H01L21/02074 , H01L21/304 , H01L21/67051
摘要： A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.
摘要翻译： 提供了去除抛光副产物的方法和抛光装置。 该方法包括将正极安装在研磨台板的中心和负极上，在研磨台板的边缘上，在金属抛光处理完成之后，在正极和负极之间施加电压，并旋转抛光 压板并用去离子水或化学清洁溶液冲洗抛光垫以除去在抛光过程中形成的抛光副产物。 离心力和电动势的组合增加了抛光副产物的去除率。
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公开(公告)号：US10670965B2
公开(公告)日：2020-06-02
申请号：US13077947
申请日：2011-03-31
申请人： Emad Aqad , Cong Liu , Cheng-Bai Xu , Mingqi Li
发明人： Emad Aqad , Cong Liu , Cheng-Bai Xu , Mingqi Li
摘要： New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.
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公开(公告)号：US08846535B2
公开(公告)日：2014-09-30
申请号：US13315143
申请日：2011-12-08
IPC分类号： H01L21/302 , H01L21/461 , H01L21/02 , H01L29/49 , H01L21/321 , H01L21/28
CPC分类号： H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
摘要： The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminum gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
摘要翻译： 本发明公开了半导体器件的制造方法。 在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，用H 2 O 2溶液氧化铝门的暴露表面以形成氧化铝膜，并清洁半导体器件。
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公开(公告)号：US20130105919A1
公开(公告)日：2013-05-02
申请号：US13486994
申请日：2012-06-01
CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/401 , H01L29/495 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件使用铝合金而不是铝合金作为金属栅极。 因此，CMP后的高k金属栅极的表面是铝合金而不是纯铝，这可以大大减少金属栅极中的腐蚀，凹坑和损伤等缺陷，提高半导体器件的可靠性。
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公开(公告)号：US20120164923A1
公开(公告)日：2012-06-28
申请号：US13178968
申请日：2011-07-08
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： A polishing method is disclosed, which includes: conditioning a polishing pad, after polishing metal material of a previous wafer; spraying organic acid solution to the polishing pad; spraying deionized water to the polishing pad; performing a water-removing treatment on the polishing pad; and spraying polishing liquid to the polishing pad and polishing metal material of a next wafer. The method can prevent scratches on the surface of metal material of wafers and improve yield rate.
摘要翻译： 公开了一种抛光方法，其包括：在抛光前一晶片的金属材料之后调节抛光垫; 将有机酸溶液喷洒到抛光垫上; 将去离子水喷在抛光垫上; 对抛光垫进行除水处理; 并将抛光液喷射到抛光垫上并抛光下一个晶片的金属材料。 该方法可以防止晶片金属材料表面划伤，提高成品率。
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公开(公告)号：US20110250537A1
公开(公告)日：2011-10-13
申请号：US12965339
申请日：2010-12-10
申请人： Emad AQAD , Mingqi Li , Joseph Mattia , Cheng-Bai Xu
发明人： Emad AQAD , Mingqi Li , Joseph Mattia , Cheng-Bai Xu
CPC分类号： G03F7/0045 , C07C381/12 , C07J31/006 , G03F7/0046 , G03F7/0382
摘要： New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.
摘要翻译： 提供新的光酸产生剂化合物（“PAG”），其包含胆酸盐部分和包含这种PAG化合物的光致抗蚀剂组合物。
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公开(公告)号：US06842937B2
公开(公告)日：2005-01-18
申请号：US10180180
申请日：2002-06-27
申请人： Mingqi Li
发明人： Mingqi Li
IPC分类号： E04D13/076
CPC分类号： E04D13/0765
摘要： A gutter-cleaning tool set consists of a lightweight, adjustable or fixed length pole, a gutter-shaped blade, a gutter-shaped brush, a metal pin to lock the blade or brush on the end of the pole and a nylon string to secure the pin to the holding pole, the tool set is designed to collect deposits such as fallen leaves and roof debris in the gutters and to brush the rain gutter for thorough cleaning.
摘要翻译： 沟槽清洁工具组由重量轻，可调节或固定长度的杆，槽形刀片，沟槽形刷，金属销钉固定在杆的端部上的金属销和尼龙绳组成，以固定 针脚固定在支杆上，工具组设计用于收集沟槽中的落叶和屋顶碎屑等沉积物，并将雨水刷清洗干净。
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9.发明授权Compositions comprising base-reactive component and processes for photolithography 有权包含碱反应性组分的组合物和用于光刻的方法公开(公告)号：US09436082B2
公开(公告)日：2016-09-06
申请号：US13341067
申请日：2011-12-30
申请人： Deyan Wang , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
发明人： Deyan Wang , Shintaro Yamada , Cong Liu , Mingqi Li , Joon-Seok Oh , Chunyi Wu , Doris Kang , Cheng-Bai Xu
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/30
摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
摘要翻译： 提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。 本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。
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公开(公告)号：US08721401B2
公开(公告)日：2014-05-13
申请号：US13163667
申请日：2011-06-17
IPC分类号： B24B53/017 , B24B53/00
CPC分类号： B24B53/017
摘要： A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
摘要翻译： 一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。 在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。
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