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    Systems And Methods For Monitoring Plating And Etching Baths
    12.
    发明申请
    Systems And Methods For Monitoring Plating And Etching Baths 失效
    监控电镀和蚀刻浴的系统和方法

    公开(公告)号：US20080264801A1

    公开(公告)日：2008-10-30

    申请号：US11867399

    申请日：2007-10-04

    Applicant: Alan C. West ,  Mark J. Willey ,  Robert J. von Gutfeld

    Inventor： Alan C. West ,  Mark J. Willey ,  Robert J. von Gutfeld

    IPC: G01N27/416 ,  G01N27/26

    CPC classification number: G01N27/42

    Abstract: Methods and systems for monitoring electrolyte bath fluids are provided. The electrolyte bath fluids can be electroplating, electroless plating or etching solutions. The monitoring systems employ microfluidic devices, which have built in microfluidic channels and microfabricated thin-film electrodes. The devices are configured with fluid pumps to control the movement and mixing of test fluids through the microfluidic channels. The microfabricated thin-film electrodes are configured so that the plating or etching bath fluid composition can be characterized by electrochemical measurements. The monitoring methods and system provide faster measurement times, generate minimal waste, and occupy dramatically reduced physical space compared to conventional bath-monitor systems. The monitoring systems and method also provide low-cost system and methods for measuring or monitoring electroless plating bath rates.

    Abstract translation: 提供了用于监测电解液液体的方法和系统。 电解液液体可以是电镀，无电镀或蚀刻溶液。 监测系统采用微流体装置，其内置微流体通道和微细的薄膜电极。 这些装置配置有流体泵，以控制测试流体通过微流体通道的移动和混合。 微制造的薄膜电极被配置为使得电镀或蚀刻浴液组合物可以通过电化学测量来表征。 监测方法和系统提供更快的测量时间，产生最少的浪费，并且与传统的浴室监视系统相比，占据显着减少的物理空间。 监测系统和方法还提供了用于测量或监测化学镀浴率的低成本系统和方法。

    THROUGH SILICON VIA FILLING USING AN ELECTROLYTE WITH A DUAL STATE INHIBITOR
    14.
    发明申请
    THROUGH SILICON VIA FILLING USING AN ELECTROLYTE WITH A DUAL STATE INHIBITOR 有权
    通过使用电解液与双态抑制剂进行填充的硅

    公开(公告)号：US20110284386A1

    公开(公告)日：2011-11-24

    申请号：US13110488

    申请日：2011-05-18

    Applicant: Mark J. Willey ,  Steven T. Mayer

    Inventor： Mark J. Willey ,  Steven T. Mayer

    IPC: C25D5/02 ,  C25D19/00 ,  C25D3/38

    CPC classification number: C25D3/38 ,  C25D5/022 ,  C25D7/123 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

    Abstract translation: 提供了一种用于电镀大量，高纵横比的凹陷特征与铜而不在现场区域中沉积大量铜的方法。 该方法允许以基本无空隙的方式完全填充具有至少约5:1的纵横比（例如至少约10:1）和至少约1μm的宽度的凹陷特征，而不沉积超过5％的铜 场区域（相对于沉积在凹陷特征中的厚度）。 该方法包括将具有一个或多个大的，高纵横比的凹陷特征（例如TSV）的基底与包含铜离子的电解质和被配置用于抑制场区中的铜沉积的有机双态抑制剂（DSI）接触，以及电沉积 在电势控制条件下，电位控制的铜不超过DSI的临界电位。

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