公开(公告)号：US20100041226A1

公开(公告)日：2010-02-18

申请号：US12193644

申请日：2008-08-18

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/445 ,  C25D3/38 ,  C25D17/00

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. Low copper concentration and high acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 低铜浓度和高酸性电镀溶液用于将铜沉积到通孔硅通孔中。

公开(公告)号：US08722539B2

公开(公告)日：2014-05-13

申请号：US13270897

申请日：2011-10-11

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US07776741B2

公开(公告)日：2010-08-17

申请号：US12193644

申请日：2008-08-18

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20100200412A1

公开(公告)日：2010-08-12

申请号：US12762275

申请日：2010-04-16

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: H01L21/288 ,  C25D3/38

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US08043967B2

公开(公告)日：2011-10-25

申请号：US12762275

申请日：2010-04-16

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20120031768A1

公开(公告)日：2012-02-09

申请号：US13270897

申请日：2011-10-11

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: C25D5/02 ,  C25D7/12

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20130284604A1

公开(公告)日：2013-10-31

申请号：US13869891

申请日：2013-04-24

Applicant: Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

Inventor： Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

IPC: C25D21/14 ,  C25D17/00 ,  C25D3/38

CPC classification number: C25D21/14 ,  C25D3/38 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/18

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract translation: 公开了将金属电镀到基底上的装置和方法。 电镀装置包括电镀电池和至少一个氧化装置。 电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。 氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。 在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。 在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。 还公开了高效电镀的方法。

公开(公告)号：US07622024B1

公开(公告)日：2009-11-24

申请号：US11040359

申请日：2005-01-20

Applicant: Steven T. Mayer ,  Jonathan D. Reid

Inventor： Steven T. Mayer ,  Jonathan D. Reid

IPC: C25D17/00 ,  C25D5/00

CPC classification number: C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  Y10S204/07

Abstract: A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

Abstract translation: 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而使系统的电阻变化。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。

公开(公告)号：US07442267B1

公开(公告)日：2008-10-28

申请号：US10999838

申请日：2004-11-29

Applicant: Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

Inventor： Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

IPC: C22F1/14

CPC classification number: C22F1/14 ,  C23C16/18 ,  C23C16/56 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874

Abstract: A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.

Abstract translation: 形成含钌的薄膜。 通常，含钌薄膜的厚度在约1nm至20nm的范围内。 含钌的薄膜在无氧气氛中，例如在N 2 O 2形成气体中，在约100℃至500℃的温度范围内退火，以便 总时间约10秒至1000秒。 此后，通过电镀或化学镀将铜或其它金属沉积到退火的含钌薄膜上。 在一些实施方案中，含钌的薄膜也通过UV辐射处理。

公开(公告)号：US07097410B1

公开(公告)日：2006-08-29

申请号：US10379858

申请日：2003-03-04

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

IPC: B65G47/90 ,  C25D5/00

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。