公开(公告)号：US07776741B2

公开(公告)日：2010-08-17

申请号：US12193644

申请日：2008-08-18

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20100041226A1

公开(公告)日：2010-02-18

申请号：US12193644

申请日：2008-08-18

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/445 ,  C25D3/38 ,  C25D17/00

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. Low copper concentration and high acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 低铜浓度和高酸性电镀溶液用于将铜沉积到通孔硅通孔中。

公开(公告)号：US08722539B2

公开(公告)日：2014-05-13

申请号：US13270897

申请日：2011-10-11

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US08043967B2

公开(公告)日：2011-10-25

申请号：US12762275

申请日：2010-04-16

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: H01L21/44

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20120031768A1

公开(公告)日：2012-02-09

申请号：US13270897

申请日：2011-10-11

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: C25D5/02 ,  C25D7/12

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US20100200412A1

公开(公告)日：2010-08-12

申请号：US12762275

申请日：2010-04-16

Applicant: Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

Inventor： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Wiley

IPC: H01L21/288 ,  C25D3/38

CPC classification number: H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。