公开(公告)号：US08899289B2

公开(公告)日：2014-12-02

申请号：US13613050

申请日：2012-09-13

申请人： Masatoshi Deguchi ,  Masatoshi Shiraishi ,  Shinji Okada

发明人： Masatoshi Deguchi ,  Masatoshi Shiraishi ,  Shinji Okada

IPC分类号： B29C65/00 ,  G05G15/00 ,  B23K31/00 ,  H01L21/30 ,  H01L21/687 ,  H01L21/67 ,  H01L21/18 ,  B32B38/00 ,  H01L21/683 ,  B32B38/18

CPC分类号： H01L21/6715 ,  B32B38/0036 ,  B32B2038/1891 ,  B32B2309/02 ,  B32B2309/62 ,  B32B2457/14 ,  B32B2457/20 ,  H01L21/187 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/6838 ,  H01L21/68707 ,  H01L21/68742

摘要： When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

摘要翻译： 通过将处理基板和支撑基板分别吸附在第一保持单元和第二保持单元上而将处理目标基板和支撑基板接合在一起，第一保持单元和第二保持单元被布置成彼此面对并且将第二保持单元朝向第一保持单元按压，同时 通过加热保持单元的加热机构来加热基板，本发明在将处理对象基板吸附到第一保持单元之前至少预热处理对象基板，以抑制在将处理对象基板与支撑基板接合在一起时产生粒子 从而适当地执行处理目标基板和支撑基板的接合。

公开(公告)号：US20140224763A1

公开(公告)日：2014-08-14

申请号：US14342941

申请日：2012-08-03

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

IPC分类号： H01L21/683

CPC分类号： H01L21/683 ,  B32B38/10 ,  B81C1/00238 ,  H01L21/6708 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/68707 ,  H01L2221/68327 ,  H01L2221/6834

摘要： This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent of the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

摘要翻译： 该接合目标基板和支撑基板的接合方法包括：粘合剂涂布操作，其包括用粘合剂涂覆目标基板或支撑基板; 一种粘合剂去除操作，其包括在粘合剂涂覆操作中将粘合剂的溶剂供给到涂覆有粘合剂的目标基材或支撑基材的外周部分上，从而除去外周部分上的粘合剂; 以及接合操作，其包括将粘合剂去除操作中除去外周部分上的粘合剂并且没有粘合剂涂覆的支撑基板，或者将支撑体 基板，其中在粘合剂去除操作中去除外周部分上的粘合剂，并且没有粘合剂涂覆的目标基板。

公开(公告)号：US07678532B2

公开(公告)日：2010-03-16

申请号：US11680957

申请日：2007-03-01

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/40 ,  G03F7/36

CPC分类号： G03F7/40

摘要： The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg. Upon masking the predetermined area Tg, the photoresist 206 is dissolved in a first dissolving-speed mode on the backing layer 205, and then after the photoresist to be dissolved reaches the stepped portion 205a, the photoresist 206 is dissolved in a second dissolving-speed mode which is slower than the first dissolving-speed mode.

摘要翻译： 本发明提供了一种处理衬底的方法，包括通过溶解抗蚀剂图案形成所需图案的回流工艺，由此可以防止诸如断开的缺陷的发生，并且可以有效地形成具有适当均匀性的图案 在希望被掩蔽的每个预定区域上。 从包括较厚膜部分和较薄膜部分的光致抗蚀剂图案206，通过重新显影工艺除去较薄的膜部分。 接下来，通过在背衬层205上的再显影工艺形成的光致抗蚀剂被溶解，使得其通过形成在背衬层205的每个边缘部分205b处的阶梯部分205a，从而掩蔽预定区域Tg。 在掩蔽预定区域Tg时，光致抗蚀剂206以第一溶解速度模式溶解在背衬层205上，然后在待溶解的光致抗蚀剂到达阶梯部分205a之后，光致抗蚀剂206以第二溶解速度 模式比第一溶解速度模式慢。

公开(公告)号：US07670960B2

公开(公告)日：2010-03-02

申请号：US11681550

申请日：2007-03-02

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/40 ,  G02F1/1303 ,  H01L21/0273 ,  H01L29/66765 ,  H01L29/78603

摘要： Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure to a first target pressure lower than the standard pressure; introducing a solvent vapor-containing atmosphere into the processing chamber, thereby bringing the internal pressure back to the standard pressure; dissolving the resist film by a solvent contained in the solvent vapor-containing atmosphere; and evacuating a processing chamber, thereby reducing the internal pressure to a second target pressure higher than the first target pressure and lower than the standard pressure and discharging the solvent vapor-containing atmosphere from the processing chamber. Owing to the relatively low second target pressure, undesirable deformation of the resist film or defects in the resist film due to rapid evaporation of the solvent penetrated in the resist film can be prevented.

摘要翻译： 公开了一种基板处理方法，其使形成在基板上的第一图案的光致抗蚀剂膜溶解并变形，将抗蚀剂膜重新形成为第二图案。 该方法包括：抽空处理室，从而将处理室的内部压力从标准压力降低到低于标准压力的第一目标压力; 将含有溶剂蒸气的气氛引入处理室，从而使内部压力回到标准压力; 用包含在含溶剂蒸气的气氛中的溶剂溶解抗蚀剂膜; 并且排出处理室，从而将内部压力降低到高于第一目标压力并低于标准压力的第二目标压力，并将来自处理室的含溶剂蒸气的气体排出。 由于第二目标压力相对较低，可以防止抗蚀剂膜的不期望的变形或抗蚀剂膜中渗透的溶剂的快速蒸发引起的抗蚀剂膜中的缺陷。

公开(公告)号：US20070207405A1

公开(公告)日：2007-09-06

申请号：US11680957

申请日：2007-03-01

申请人： Yutaka Asou ,  Masatoshi Shiraishi

发明人： Yutaka Asou ,  Masatoshi Shiraishi

IPC分类号： G03C1/00

CPC分类号： G03F7/40

摘要： The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg. Upon masking the predetermined area Tg, the photoresist 206 is dissolved in a first dissolving-speed mode on the backing layer 205, and then after the photoresist to be dissolved reaches the stepped portion 205a, the photoresist 206 is dissolved in a second dissolving-speed mode which is slower than the first dissolving-speed mode.

摘要翻译： 本发明提供了一种处理衬底的方法，其包括通过溶解抗蚀剂图案形成所需图案的回流工艺，由此可以防止诸如断开的缺陷的发生，并且可以有效地形成具有适当均匀性的图案 在希望被掩蔽的每个预定区域上。 从包括较厚膜部分和较薄膜部分的光致抗蚀剂图案206，通过重新显影工艺除去较薄的膜部分。 接下来，通过在背衬层205上的再显影工艺形成的光致抗蚀剂被溶解，使得其通过形成在背衬层205的每个边缘部分205b处的阶梯部分205a，从而掩蔽预定区域Tg。 在掩蔽预定区域Tg时，光致抗蚀剂206以第一溶解速度模式溶解在背衬层205上，然后在待溶解的光致抗蚀剂到达阶梯部分205a之后，光致抗蚀剂206溶解在第二溶解速度模式中， 速度模式比第一溶解速度模式慢。

公开(公告)号：US09463612B2

公开(公告)日：2016-10-11

申请号：US14342704

申请日：2012-08-30

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi

IPC分类号： C09J5/00 ,  B32B38/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683 ,  B32B38/00 ,  B32B37/12

CPC分类号： B32B38/10 ,  B32B37/12 ,  B32B38/0012 ,  B32B2457/14 ,  C09J5/00 ,  H01L21/6708 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/68707 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T156/14

摘要： The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

摘要翻译： 本公开是连接目标基板和支撑基板的接合方法，其中，所述方法具有：连接操作，其包括通过在其间插入粘合剂来挤压和接合所述目标基板和所述支撑基板; 以及粘合剂去除操作，其包括将粘合剂的溶剂供应到作为在接合操作中突出的目标基板和支撑基板之间的粘合剂的外部粘合剂，所述粘合剂从通过连接目标基板制成的层叠基板的外侧表面和 支撑基板，并且去除外部粘合剂的表面，使得外部粘合剂形成为预定尺寸。

公开(公告)号：US5501870A

公开(公告)日：1996-03-26

申请号：US376393

申请日：1995-01-23

申请人： Masatoshi Shiraishi ,  Tomoko Hamada

发明人： Masatoshi Shiraishi ,  Tomoko Hamada

IPC分类号： G03F7/16 ,  C23C16/44 ,  C23C16/52 ,  G03F7/11 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  B05D3/02 ,  C23C16/00

CPC分类号： H01L21/67103 ,  C23C16/4412 ,  C23C16/52 ,  Y10S438/974

摘要： Adhesion apparatus for applying a hydrophobic treatment to a semiconductor wafer comprises a tank housing a treating agent of liquid HMDS and a process chamber into which a mixed gas consisting of a vaporized HMDS coming from the tank and a carrier gas is supplied for applying a hydrophobic treatment to a wafer surface. A supporting table on which the wafer is disposed during the hydrophobic treatment is provided within the process chamber. A heater and a cooling water passageway are housed in the supporting table for controlling the wafer temperature. A concentration measuring section for measuring the HMDS concentration in the waste gas is connected to the discharge pipe of the process chamber. The concentration measuring section is connected to a CPU serving to derive a temperature control signal from the measured value of the HMDS concentration. The temperature control signal is transmitted to a temperature control section. Upon receipt of the temperature control signal, the temperature control section permits controlling the current supply to the heater or the cooling water supply to the cooling water passageway so as to change the temperature of the supporting table.

公开(公告)号：US4662062A

公开(公告)日：1987-05-05

申请号：US703539

申请日：1985-02-20

申请人： Tetsuo Toyooka ,  Masatoshi Shiraishi

发明人： Tetsuo Toyooka ,  Masatoshi Shiraishi

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L21/225

CPC分类号： H01L29/66295 ,  H01L29/1004 ,  Y10S148/01 ,  Y10S148/151

摘要： Manufacturing of a graft-base transistor is characterized by: first, forming a layer (8) of oxide of silicon with opening on an n-semiconductor layer (2), at a part to become a base region (3, 4, 3) (FIG. 2a)); then, forming a polycrystalline silicon layer (9) and an overriding silicon nitride layer (10) with an opening (11) thereon (FIG. 2(b)); selectively diffusing P or As to form an n-emitter region (5) (FIG. 2(c)); forming a second silicon oxide layers (12, 13) only on the emitter region (5) and on peripheral regions thereabout, and removing the polycrystalline layer (9) and the silicon nitride layer (10), (FIG. 2(d)) (FIG. 2(e)); and implanting B.sup.+ ions, thereby to form deeper and higher concentration base contact regions (3, 3) and shallower and lower concentration active base region (4).

摘要翻译： 接枝基晶体管的制造的特征在于：首先，在n半导体层（2）上形成具有开口的硅氧化物层（8），部分成为基极区域（3,4） （图2a））; 然后，在其上形成多晶硅层（9）和其上具有开口（11）的覆盖氮化硅层（10）（图2（b））; 选择性地扩散P或As以形成n-发射极区（5）（图2（c））; 仅在发射极区域（5）上形成第二氧化硅层（12,13），并且在其周边区域上形成第二氧化硅层（12,13），并去除多晶层（9）和氮化硅层（10），（图2（d）） （图2（e））; 并注入B +离子，从而形成更深和更高浓度的碱接触区域（3,3）和较浅和较低浓度的活性碱性区域（4）。