公开(公告)号：US20060001360A1

公开(公告)日：2006-01-05

申请号：US11211665

申请日：2005-08-26

申请人： Natsuo Tatsumi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Takahiro Imai

IPC分类号： H01J1/62

CPC分类号： H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

摘要： An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source according to the present invention, emitters have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters are unlikely to melt even at a high current density of an electric current flowing in the emitters, and thus the cold-cathode electron source is able to support an operation at a high output.

摘要翻译： 本发明的目的是提供一种成功实现高频和高输出的冷阴极电子源，使用它的微波管及其制造方法。 在根据本发明的冷阴极电子源中，发射器具有以不小于4的纵横比R渐缩的尖端部分，因此发射极和栅电极之间的电容从 栅电极。 因此，冷阴极电子源能够以高频率进行动作。 冷阴极电子源的阴极材料不是诸如钨和硅的常规阴极材料，而是具有高熔点和高导热性的金刚石。 因此，即使在发射极中流动的电流的高电流密度下，发射极也不会熔化，因此冷阴极电子源能够支持高输出的动作。

公开(公告)号：US20050133735A1

公开(公告)日：2005-06-23

申请号：US10952477

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/304 ,  H01J1/308 ,  H01J63/02 ,  G21G5/00

CPC分类号： H01J63/02 ,  H01J1/3044 ,  H01J1/308

摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US20140026492A1

公开(公告)日：2014-01-30

申请号：US14111289

申请日：2012-04-10

申请人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

发明人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

IPC分类号： B23B27/20

CPC分类号： B23B27/20 ,  B23B27/141 ,  B23B2226/125 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/5831 ,  C04B35/645 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/781 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/81 ,  C04B2235/87 ,  Y10T407/26 ,  Y10T407/27

摘要： The present invention provides a cutting tool that achieves cutting with high precision. The cutting tool of the present invention includes a cutting edge composed of a polycrystalline body including high-pressure-phase hard grains that contain one or more elements selected from the group consisting of boron, carbon, and nitrogen, the polycrystalline body being formed by subjecting a non-diamond carbon material and/or boron nitride, serving as a starting material, to direct conversion sintering under ultra-high pressure and high temperature without adding a sintering aid or a catalyst, in which letting the radius of curvature of the nose of the cutting edge of the cutting tool be R1, the sintered grains constituting the polycrystalline body have an average grain size of 1.2×R1 or less and a maximum grain size of 2×R1 or less.

摘要翻译： 本发明提供一种以高精度实现切割的切削工具。 本发明的切削工具包括由包含高压相硬质粒子的多晶体构成的切削刃，所述高压相硬质粒子含有选自硼，碳和氮的一种以上的元素，所述多晶体通过 作为起始原料的非金刚石碳材料和/或氮化硼，在超高压和高温下直接转化烧结，而不添加烧结助剂或催化剂，其中使得鼻子的曲率半径 切削刀具的切削刃为R1，构成多晶体的烧结晶粒的平均粒径为1.2×R1以下，最大粒径为2×R1以下。

公开(公告)号：US07902734B2

公开(公告)日：2011-03-08

申请号：US11883323

申请日：2006-09-21

申请人： Yoshiyuki Yamamoto ,  Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/304

CPC分类号： H01J1/3044 ,  H01J9/025

摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

摘要翻译： 电子发射器件2包括由金刚石制成的电子发射部分6。 在电子发射电流值为10μA以上的情况下，电子发射器件2中的电子发射电流值在1小时内的偏差在±20％以内。电子发射电流值变化的阶梯状噪声的发生次数 每10分钟一步或一次。

公开(公告)号：US07391145B2

公开(公告)日：2008-06-24

申请号：US11211665

申请日：2005-08-26

申请人： Natsuo Tatsumi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Takahiro Imai

IPC分类号： H01J1/304

CPC分类号： H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

摘要： A cold-cathode electron source is formed that successfully achieves a high frequency and a high output. Embodiments include a cold-cathode electron source comprising emitters having a tip portion tapered at an aspect ratio R of not less than 4, thereby decreasing capacitance between the emitters and a gate electrode by a degree of declination from the gate electrode, such that the cold-cathode electron source is able to operate at a high frequency. Embodiments also include a cold-cathode electron source formed of a diamond with a high melting point and a high thermal conductivity, such that the emitters operate at a high current density and at a high output.

摘要翻译： 形成冷阴极电子源，其成功实现高频和高输出。 实施例包括一种冷阴极电子源，其包括具有以不小于4的纵横比R渐缩的尖端部分的发射体，由此使源极与栅电极之间的电容从栅电极减小一定角度，使得冷 - 阴极电子源能够在高频下工作。 实施例还包括由具有高熔点和高导热性的金刚石形成的冷阴极电子源，使得发射器以高电流密度和高输出工作。

公开(公告)号：US07323812B2

公开(公告)日：2008-01-29

申请号：US10555296

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J9/30

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

摘要： A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。

公开(公告)号：US20060220514A1

公开(公告)日：2006-10-05

申请号：US10555296

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J9/00

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

摘要： A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concaved molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si (111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延的金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。

公开(公告)号：US20060044036A1

公开(公告)日：2006-03-02

申请号：US10526471

申请日：2004-03-05

申请人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

发明人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

IPC分类号： H03K3/037 ,  G09G3/10

CPC分类号： H03K19/06 ,  H01J19/24 ,  H01J21/20 ,  H03K19/08

摘要： A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration. A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.

摘要翻译： 提供了能够高速度和高集成度的逻辑运算元件和逻辑运算电路。 逻辑运算电路具有这样的结构，其中在逻辑运算元件中，将第一和第二场致发射型微细加电子发射体的阳极置于相同的电位，并将两个或更多个信号电压输入到对应于这些发射极的栅电极。 一种NOR元件，其被布置成当高电位输入信号被输入到两条线中的任一条时，从发射极发生电子发射，并且所述阳极的电位降低;以及NAND元件，其中第一和第二场致发射的阴极 类型的微制造电子发射体串联连接时，两个信号电压施加到对应于第一和第二发射极的栅电极，并且当采用两个输入信号为高电位时，第二发射极的阳极电位降低。