Abstract:
Embodiments of a circuit and a stylus for interacting with a capacitive sensor are disclosed. The stylus includes a stylus body, a circuit disposed within the stylus body, a tip, and a power source. The circuit includes an input terminal, an amplifier, and an output terminal. The tip includes a sensing electrode and an emitting electrode, and the tip is disposed on a proximal end of the stylus body. The power source is electrically coupled to the circuit. The input terminal of the circuit is electrically coupled to the sensing electrode of the tip, and the output terminal of the circuit is electrically coupled to the emitting electrode of the tip. The circuit receives a signal through the sensing electrode, amplifies and inverts the signal, and outputs the signal through the emitting electrode. The amplifier of the circuit amplifies only a portion of the signal that exceeds a threshold voltage.
Abstract:
A liquid level detection method includes capturing an image of a liquid surface, a structural surface, and graduation markings provided on the structural surface using an image-capturing device to thereby obtain an initial image. Subsequently, the initial image is processed so as to generate a processed image, and a level reference value of the liquid surface is obtained from the processed image. The level reference value represents a height of the liquid surface in terms of inherent characteristics of the processed image. Lastly, a liquid level of the liquid surface is calculated based on a relative proportional relation among the level reference value, an overall height of the processed image in terms of the inherent characteristics of the processed image, and dimensions of any one of the initial and processed images relative to the graduation markings.
Abstract:
A portable electronic device includes a touch pen comprising a main body, a first pen head, a first elastic member, and a first sleeve. The first elastic member interconnects the main body and the first pen head. The first sleeve is slidably sleeved on the main body or the first elastic member so as to expose at least a part of the first elastic member. The first elastic member is bendable.
Abstract:
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
Abstract:
A test board for wafer level semiconductor testing is disclosed. The test board comprises a plurality of wires and microelectronic devices; and a plurality of test sockets on an upper surface of the test board. Each test socket comprises: a base member configured for attachment to the test board with a first set of screws, wherein the base member has a central opening exposing a portion of the underlying test board; an anisotropic conductive film disposed within the central opening of the base member; a chip to be tested, disposed on the anisotropic conductive film within the central opening of the base member; and a cover member overlying the chip, attached to the base member with a second set of screws.
Abstract:
Embodiments disclose an image sensor device, comprising a substrate comprising a plurality of photosensor cells located therein or thereon, a plurality of optical guide structures corresponding to the photosensor cells respectively, and a stacked layer surrounding the optical guide structures, comprising a plurality of top portions with sharp corners adjacent to the top edges of the optical guide structures.
Abstract:
An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel array therein. A first transparent layer with a curved surface is disposed on the substrate. A micro lens array is conformally disposed on the curved surface of the first transparent layer and corresponds to the pixel array in the substrate. The invention also discloses an electronic assembly for an image sensor device and a fabrication method thereof.
Abstract:
A test board for wafer level semiconductor testing is disclosed. The test board comprises a plurality of wires and microelectronic devices; and a plurality of test sockets on an upper surface of the test board. Each test socket comprises: a base member configured for attachment to the test board with a first set of screws, wherein the base member has a central opening exposing a portion of the underlying test board; an anisotropic conductive film disposed within the central opening of the base member; a chip to be tested, disposed on the anisotropic conductive film within the central opening of the base member; and a cover member overlying the chip, attached to the base member with a second set of screws.
Abstract:
An optoelectronic device chip, and a method for making the chip, are disclosed. The chip comprises a device substrate, an optically transparent upper substrate, and a composite spacer layer which includes an adhesive material and a plurality of particles dispersed in said adhesive material. The distance between the device substrate and the upper substrate is controlled by the thickness of the composite spacer layer so that the variation is within the depth of focus of optical system.