公开(公告)号：US07642499B2

公开(公告)日：2010-01-05

申请号：US12023721

申请日：2008-01-31

申请人： Ryu Shimizu ,  Masahiro Oda

发明人： Ryu Shimizu ,  Masahiro Oda

IPC分类号： H01L27/00 ,  H04N3/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

摘要： This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

摘要翻译： 该图像传感器包括用于增加电荷量的电荷增加部分，用于将调节与电荷增加部分相邻的区域的电压施加到规定电位的第一电极，与第一电极相邻设置的用于施加另一个电压增加的第二电极 电荷增加部分中的电荷量，形成在用于向第一电极提供信号的规定层上的第一线和形成在与规定层不同的层上的第二线，用于向第二电极提供另一信号。

公开(公告)号：US20090316032A1

公开(公告)日：2009-12-24

申请号：US12479325

申请日：2009-06-05

申请人： Kaori Misawa ,  Mamoru Arimoto ,  Hayato Nakashima ,  Ryu Shimizu

发明人： Kaori Misawa ,  Mamoru Arimoto ,  Hayato Nakashima ,  Ryu Shimizu

IPC分类号： H04N5/335 ,  H01L21/28

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/374

摘要： An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.

摘要翻译： 图像传感器包括用于冲击电离和增加信号电荷的增加部分，用于将增加信号电荷的电压施加到增加部分的电荷增加电极和设置在电荷增加电极与增加部分之间的绝缘膜，其中绝缘 膜包括由第一绝缘膜形成的由热氧化膜制成的第一绝缘膜和由氧化膜制成的第二绝缘膜。

公开(公告)号：US20050062146A1

公开(公告)日：2005-03-24

申请号：US10945945

申请日：2004-09-22

申请人： Takayuki Kaida ,  Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa ,  Takashi Noma

发明人： Takayuki Kaida ,  Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa ,  Takashi Noma

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H01L23/04

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

摘要翻译： 提供了允许简化制造工艺的半导体器件。 该半导体器件包括由单一材料构成的第一绝缘膜，其形成为与包括电路的半导体芯片的上表面接触，形成为与第一绝缘膜的上表面接触的第一线和 形成为沿着半导体芯片的侧表面和下表面延伸并连接到通过部分去除第一绝缘膜而暴露的第一线的下表面的第二线。

公开(公告)号：US07821042B2

公开(公告)日：2010-10-26

申请号：US11831356

申请日：2007-07-31

申请人： Hayato Nakashima ,  Ryu Shimizu

发明人： Hayato Nakashima ,  Ryu Shimizu

IPC分类号： H01L29/768 ,  H01L27/148 ,  H01L29/66

CPC分类号： H01L27/14831 ,  H04N5/3559 ,  H04N5/37452

摘要： An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

摘要翻译： 成像装置包括用于产生存储信号电荷的电场的第一电极，用于乘以存储的信号电荷的电荷倍增部分，用于产生电荷倍增部分中的电场的第二电极，用于转换信号电荷的电压转换部分 设置在第一电极和电压转换部之间的电压，用于将信号电荷传送到电压转换部的第三电极，其中第二电极设置在与第三电极和电压转换部相对的一侧， 到第一电极。

公开(公告)号：US20090315086A1

公开(公告)日：2009-12-24

申请号：US12486495

申请日：2009-06-17

申请人： Mamoru Arimoto ,  Kaori Misawa ,  Hayato Nakashima ,  Ryu Shimizu

发明人： Mamoru Arimoto ,  Kaori Misawa ,  Hayato Nakashima ,  Ryu Shimizu

IPC分类号： H01L31/112 ,  H01L31/101

CPC分类号： H01L27/14603 ,  H01L27/14609

摘要： An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.

摘要翻译： 图像传感器包括用于向电荷存储部分施加电压的第一电极，用于向电荷增加部分施加电压的第二电极，设置在第一电极和第二电极之间的第三电极和第一导电的杂质区域 用于形成传送信号电荷的路径的类型，其中对应于位于第二电极下方的部分的杂质区域的杂质浓度高于对应于部分的杂质区域的杂质浓度 位于第三电极下。

公开(公告)号：US20090152605A1

公开(公告)日：2009-06-18

申请号：US12338001

申请日：2008-12-18

申请人： Toshikazu Ohno ,  Yugo Nose ,  Ryu Shimizu ,  Mamoru Arimoto ,  Tatsushi Ohyama

发明人： Toshikazu Ohno ,  Yugo Nose ,  Ryu Shimizu ,  Mamoru Arimoto ,  Tatsushi Ohyama

IPC分类号： H01L33/00 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14806

摘要： An image sensor includes a carrier generating portion having a photoelectric conversion function, a voltage conversion portion for converting signal charges to a voltage, a charge increasing portion for increasing carriers generated by the carrier generating portion and a light shielding film formed to cover at least one part of the charge increasing portion.

摘要翻译： 图像传感器包括具有光电转换功能的载波产生部分，用于将信号电荷转换为电压的电压转换部分，用于增加由载体产生部分产生的载流子的电荷增加部分和形成为覆盖至少一个 电荷增加部分的一部分。

公开(公告)号：US20090134438A1

公开(公告)日：2009-05-28

申请号：US12276648

申请日：2008-11-24

申请人： Mamoru Arimoto ,  Ryu Shimizu ,  Hayato Nakashima ,  Kaori Misawa

发明人： Mamoru Arimoto ,  Ryu Shimizu ,  Hayato Nakashima ,  Kaori Misawa

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14806

摘要： A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.

摘要翻译： CMOS图像传感器包括至少设置在第一电极，第二电极和第三电极之下的杂质区域，用于形成信号电荷转移的路径，其中杂质区域的杂质浓度对应于位于 第一电极下面的杂质浓度高于对应于位于至少第二电极和第三电极下方的各部分的杂质区域的杂质浓度。

公开(公告)号：US07474350B2

公开(公告)日：2009-01-06

申请号：US10920382

申请日：2004-08-18

申请人： Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa ,  Hayato Nakashima

发明人： Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa ,  Hayato Nakashima

IPC分类号： H04N5/225

CPC分类号： H04N5/335 ,  H01L27/14627 ,  H01L27/14685

摘要： A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

摘要翻译： 提供了在基片的端部附近也可以在光敏性方面提高的固态摄像装置。 该固态摄像装置包括：形成在基板和滤色片之间的光检测部，形成在基板和滤光片之间，用于将光聚焦在光检测部上，其透镜中心偏离 光电检测部分指定距离。

公开(公告)号：US20080048212A1

公开(公告)日：2008-02-28

申请号：US11831356

申请日：2007-07-31

申请人： Hayato Nakashima ,  Ryu Shimizu

发明人： Hayato Nakashima ,  Ryu Shimizu

IPC分类号： H01L29/768

CPC分类号： H01L27/14831 ,  H04N5/3559 ,  H04N5/37452

摘要： An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

摘要翻译： 成像装置包括用于产生存储信号电荷的电场的第一电极，用于乘以存储的信号电荷的电荷倍增部分，用于产生电荷倍增部分中的电场的第二电极，用于转换信号电荷的电压转换部分 设置在第一电极和电压转换部之间的电压，用于将信号电荷传送到电压转换部的第三电极，其中第二电极设置在与第三电极和电压转换部相对的一侧， 到第一电极。

公开(公告)号：US20050161585A1

公开(公告)日：2005-07-28

申请号：US11041252

申请日：2005-01-25

申请人： Hayato Nakashima ,  Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa

发明人： Hayato Nakashima ,  Ryu Shimizu ,  Mitsuru Okigawa ,  Tetsuya Miwa

IPC分类号： H04N5/225 ,  H01L27/00 ,  H04N5/335 ,  H04N5/361

CPC分类号： H01L27/14625

摘要： A solid-state imaging device capable of suppressing deterioration of the image quality is provided. This solid-state imaging device comprises a substrate provided with a photodetection area, a color filter layer formed above the photodetection area and a lens formed between the substrate and the color filter layer for condensing light on the photodetection area. The lens has a substantially flat upper surface portion, and the ratio (w/t) of the width w of the substantially flat upper surface portion of the lens to the thickness t of the lens is not more than about 0.86.

摘要翻译： 提供了能够抑制图像质量劣化的固态成像装置。 该固态成像装置包括设置有光电检测区域的基板，形成在光检测区域上方的滤色器层，以及形成在基板和滤色器层之间的用于在光检测区域上聚光的透镜。 透镜具有基本平坦的上表面部分，并且透镜的基本平坦的上表面部分的宽度w与透镜的厚度t之比（w / t）不大于约0.86。