公开(公告)号：US06881644B2

公开(公告)日：2005-04-19

申请号：US10150483

申请日：2002-05-17

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/00

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06448152B1

公开(公告)日：2002-09-10

申请号：US09906865

申请日：2001-07-16

申请人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

发明人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  G05B2219/32024 ,  G05B2219/45031

摘要： A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.

摘要翻译： 一种用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法。 例如，制造具有不同硅层厚度的多个施主晶片以及具有不同氧化物层厚度的多个处理晶片。 随后，客户可以订购共享定义参数的绝缘体上硅（SOI）晶圆。 因此，根据客户定义的参数选择预制的供体晶片和处理晶片，然后结合在一起。 接下来，施主晶片从手柄晶片切割，其中处理晶片保持施主晶片的硅层。 可以改变处理晶片的硅层厚度以满足客户的参数。 例如，外延平滑处理可以减小硅层厚度，而外延增厚工艺可以增加硅层厚度。

公开(公告)号：US06391219B1

公开(公告)日：2002-05-21

申请号：US09364209

申请日：1999-07-30

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2176

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06287941B1

公开(公告)日：2001-09-11

申请号：US09399985

申请日：1999-09-20

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/3065 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/967

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。 衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中，以将预定的表面粗糙度值减小约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US5963836A

公开(公告)日：1999-10-05

申请号：US759868

申请日：1996-12-03

申请人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

发明人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

IPC分类号： C23C16/42 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  C23C16/455

摘要： Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

摘要翻译： 在CVD反应器系统中处理衬底，其中沉积硅化钨是通过在沉积步骤之前和之后的还原气体的预流和后流来实现的，以确保富钨膜不会沉积在硅化钨膜与衬底的界面上或在 硅化钨膜在沉积处理结束时。 对于具有通过气体供应歧管连接到CVD反应器室的远程气体注入和流量控制系统的系统，在气体供应歧管中设置隔离阀，并且在沉积序列之间的至少一段时间内阀被保持关闭 。