公开(公告)号：US07598139B2

公开(公告)日：2009-10-06

申请号：US11896560

申请日：2007-09-04

申请人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

发明人： Weon-Ho Park ,  Sang-Soo Kim ,  Hyun-Khe Yoo ,  Sung-Chul Park ,  Byoung-Ho Kim ,  Ju-Ri Kim ,  Seung-Beom Yoon ,  Jeong-Uk Han

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11546

摘要： A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type formed in the substrate and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration, and a nonvolatile memory cell formed on the second well. A device is described comprising four wells of various conductivity types with a nonvolatile memory cell formed on the second well. A device is described comprising a plurality of wells for isolating transistors of a plurality of voltage ranges, wherein each one of the plurality of wells contains at least one transistor of a particular voltage range, and wherein transistors of only one of the plurality of voltage ranges are within each of the plurality of wells. A method is described of isolating transistors of a first voltage range from transistors of another voltage range, comprising forming a first well to hold transistors only of a first particular voltage range, and forming a second well to hold transistors only of a second particular voltage range.

摘要翻译： 描述了一种器件，其包括具有第一掺杂剂浓度的第一导电类型的衬底，在衬底中形成的第一阱，在衬底中形成并且比第一阱更深的第一导电类型的第二阱，第二阱具有 比第一掺杂剂浓度高的掺杂剂浓度，以及形成在第二阱上的非易失性存储单元。 描述了一种装置，其包括具有形成在第二阱上的非易失性存储单元的各种导电类型的四个阱。 描述了一种器件，其包括用于隔离多个电压范围的晶体管的多个阱，其中多个阱中的每一个阱包含特定电压范围的至少一个晶体管，并且其中仅一个电压范围的晶体管 在多个孔的每一个内。 描述了一种将第一电压范围的晶体管与另一电压范围的晶体管隔离的方法，包括形成第一阱以仅保持第一特定电压范围的晶体管，以及形成第二阱以仅将晶体管保持在第二特定电压范围 。

公开(公告)号：US07588983B2

公开(公告)日：2009-09-15

申请号：US12012593

申请日：2008-02-04

申请人： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoon ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-Tae Kim ,  Jeong-wook Han

发明人： Weon-ho Park ,  Byoung-ho Kim ,  Hyun-khe Yoon ,  Seung-beom Yoon ,  Sung-chul Park ,  Ju-ri Kim ,  Kwang-Tae Kim ,  Jeong-wook Han

IPC分类号： H01L21/336 ,  H01L21/8238

CPC分类号： H01L27/11524 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546

摘要： Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second region. A first EEPROM device having a first select transistor and a first memory transistor is disposed in the first region, while a second EEPROM device having a second select transistor and a second memory transistor is disposed in the second region. In the first region, a first drain region and a second floating region are formed apart from each other. In the second region, a second drain region and a second floating region are formed apart from each other. A first impurity region, a second impurity region, and a third impurity region are disposed in a common source region between the first and second regions of the substrate. The first and third impurity regions form a DDD structure, and the first and second impurity region form an LDD structure. That is, the first impurity region completely surrounds the second and third impurity regions in horizontal and vertical directions, the second impurity region surrounds the third impurity region in a horizontal direction, and the junction depth of the third impurity is greater than that of the second impurity region.

摘要翻译： 提供了EEPROM单元，EEPROM器件以及EEPROM单元和EEPROM器件的制造方法。 EEPROM单元形成在包括第一区域和第二区域的基板上。 具有第一选择晶体管和第一存储晶体管的第一EEPROM器件设置在第一区域中，而具有第二选择晶体管和第二存储晶体管的第二EEPROM器件设置在第二区域中。 在第一区域中，分开形成第一漏极区域和第二浮动区域。 在第二区域中，第二漏极区域和第二浮动区域彼此分开地形成。 第一杂质区域，第二杂质区域和第三杂质区域设置在基板的第一和第二区域之间的公共源极区域中。 第一和第三杂质区形成DDD结构，第一和第二杂质区形成LDD结构。 也就是说，第一杂质区域在水平和垂直方向上完全围绕第二和第三杂质区域，第二杂质区域在水平方向上包围第三杂质区域，并且第三杂质的结深度大于第二杂质区域的结深度 杂质区。

公开(公告)号：US07495281B2

公开(公告)日：2009-02-24

申请号：US11488983

申请日：2006-07-19

申请人： Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

发明人： Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

IPC分类号： H01L29/788

CPC分类号： H01L29/42328 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7883

摘要： In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating gate and a control gate are stacked. The sidewall selection gates are in a spacer form. Since the sidewall selection gates are in a spacer form on the sidewall of the floating gate, the degree of integration of cells can be improved. Additionally, since the side wall selection gates are disposed on both sidewalls of the floating gate, a voltage applied from a bit line and a common source line can be controlled and thus conventional writing/erasing errors can be prevented. Therefore, distribution of threshold voltage can be improved.

摘要翻译： 在非易失性存储器件及其形成和操作它的方法中，当浮置栅极和控制栅极堆叠时，一个存储器晶体管包括覆盖浮置栅极的两个侧壁的侧壁选择栅极。 侧壁选择门是间隔件形式。 由于侧壁选择栅极在浮动栅极的侧壁上是间隔物形式，所以可以提高电池的集成度。 此外，由于侧壁选择栅极设置在浮置栅极的两个侧壁上，所以可以控制从位线和公共源极线施加的电压，因此可以防止常规的写入/擦除错误。 因此，可以提高阈值电压的分布。

公开(公告)号：US20080315289A1

公开(公告)日：2008-12-25

申请号：US12199307

申请日：2008-08-27

申请人： JAE HWANG KIM ,  SEUNG-BEOM YOON ,  KWANG-WOOK KOH ,  CHANG-HUN LEE ,  SUNG-HO KIM ,  SUNG-CHUL PARK ,  JU-RI KIM

发明人： JAE HWANG KIM ,  SEUNG-BEOM YOON ,  KWANG-WOOK KOH ,  CHANG-HUN LEE ,  SUNG-HO KIM ,  SUNG-CHUL PARK ,  JU-RI KIM

IPC分类号： H01L29/00

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation layers and an active region, a pair of selection gates interposed between the control gates to cross the device isolation layers and the active region and a floating gate and an intergate dielectric pattern stacked sequentially between the control gates and the active region The EEPROM device further includes a gate insulation layer of a memory transistor interposed between the floating gate and the active region and a tunnel insulation layer thinner than the gate insulation layer of the memory transistor and a gate insulation layer of a selection transistor interposed between the selection gates and the active region. The tunnel insulation layer is aligned at one side adjacent to the floating gate.

摘要翻译： EEPROM器件包括设置在半导体衬底的预定区域以限定有源区的器件隔离层，与器件隔离层交叉的一对控制栅极和有源区，插入控制栅极之间的一对选择栅极， 器件隔离层和有源区以及顺序地堆叠在控制栅极和有源区之间的浮置栅极和隔间栅极电介质图案。EEPROM器件还包括插入浮置栅极和有源区域之间的存储晶体管的栅极绝缘层，以及 隧道绝缘层比存储晶体管的栅极绝缘层薄，并且选择晶体管的栅极绝缘层插入在选择栅极和有源区之间。 隧道绝缘层在与浮动栅极相邻的一侧对准。

公开(公告)号：US20060079045A1

公开(公告)日：2006-04-13

申请号：US11242209

申请日：2005-10-03

申请人： Jae-Hwang Kim ,  Seung-Beom Yoon ,  Kwang-Wook Koh ,  Chang-Hun Lee ,  Sung-Ho Kim ,  Sung-Chul Park ,  Ju-Ri Kim

发明人： Jae-Hwang Kim ,  Seung-Beom Yoon ,  Kwang-Wook Koh ,  Chang-Hun Lee ,  Sung-Ho Kim ,  Sung-Chul Park ,  Ju-Ri Kim

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation layers and an active region, a pair of selection gates interposed between the control gates to cross the device isolation layers and the active region and a floating gate and an intergate dielectric pattern stacked sequentially between the control gates and the active region The EEPROM device further includes a gate insulation layer of a memory transistor interposed between the floating gate and the active region and a tunnel insulation layer thinner than the gate insulation layer of the memory transistor and a gate insulation layer of a selection transistor interposed between the selection gates and the active region. The tunnel insulation layer is aligned at one side adjacent to the floating gate.

公开(公告)号：US06432510B1

公开(公告)日：2002-08-13

申请号：US09437127

申请日：1999-11-10

申请人： Sung Ryong Kim ,  Sung Chul Park ,  Jun Seob Song

发明人： Sung Ryong Kim ,  Sung Chul Park ,  Jun Seob Song

IPC分类号： B32B300

CPC分类号： B01D67/0086 ,  B01D67/009 ,  B29C59/005 ,  B29C59/08 ,  B29C59/10 ,  B29C59/14 ,  B29C59/16 ,  B29K2027/12 ,  C08J7/12 ,  C08J2327/12 ,  Y10T428/24364 ,  Y10T428/3154 ,  Y10T428/31678

摘要： A fluorinated resin having enhanced wettability to water prepared by roughening a surface of the fluorinated resin such that a central line roughness average (Ra) of the surface is increased to at least 0.1 &mgr;m, and then depositing thereon a thin hydrophilic film while maintaining the central line roughness average (Ra) of at least 0.1 &mgr;m, the thin hydrophilic film being formed from a hydrophilic substance having a contact angle of water of less that 90°, and the resulting fluorinated resin having up to 20° of contact angle of water. The fluorinated resins are able to maintain high hydrophilicity even after prolonged exposure to the atmosphere and can be used in various fields that require bio-compatibility and in permeable membranes or filters.

摘要翻译： 通过使氟化树脂的表面粗糙化，使得表面的中心线粗糙度平均值（Ra）增加至少0.1μm，然后在其上沉积薄的亲水膜，同时保持中心的氟化树脂，其具有增强的对水的润湿性 线粗糙度平均值（Ra）至少为0.1μm，薄亲水膜由水接触角小于90°的亲水性物质形成，得到的氟化树脂具有至多20°的水接触角。 氟化树脂即使在长时间暴露于大气中也能保持高亲水性，并且可以用于需要生物相容性的各种领域，并且可用于渗透膜或过滤器中。

公开(公告)号：US20230324089A1

公开(公告)日：2023-10-12

申请号：US18198973

申请日：2023-05-18

申请人： Sung-Chul PARK ,  Nam-Gyu PARK

发明人： Sung-Chul PARK ,  Nam-Gyu PARK

IPC分类号： F25D31/00 ,  F25B21/02

CPC分类号： F25B21/02 ,  F25D31/003 ,  F25B2321/023 ,  F25B2321/0251

摘要： The present invention relates to a cooling apparatus, having increased cooling efficiency, which has a cooling rod passing through the inside of a storage receptacle such that an object to be cooled stored inside the storage receptacle is cooled by means of the cooling rod, and in which the cooling rod or the storage receptacle is filled with an auxiliary cooling solution for increasing the cooling efficiency, thereby cooling the inside of the storage receptacle to a predetermined temperature even in an environment with a high external temperature.

公开(公告)号：US20140134464A1

公开(公告)日：2014-05-15

申请号：US14114349

申请日：2012-04-27

申请人： Soo Yeup Jang ,  Jeon Keun Oh ,  Ji Seok Lee ,  Dong Joo Lim ,  Sung Chul Park

发明人： Soo Yeup Jang ,  Jeon Keun Oh ,  Ji Seok Lee ,  Dong Joo Lim ,  Sung Chul Park

IPC分类号： H01M2/34

CPC分类号： H01M2/348 ,  H01M2/1061 ,  H01M2/202 ,  H01M2/34 ,  H01M10/425 ,  H01M10/482 ,  H01M2200/103

摘要： The present invention relates to a battery pack in which a plurality of unit modules consisting of battery cells are stacked, adjacently or in regular intervals, and electrode tabs are connected in series, and more specifically, to a battery pack including an overcurrent protector capable of preventing damage to each battery cell caused by a battery cell short circuit or overcurrent which flows in from a protection circuit by: connecting positive and negative electrode tabs of the battery cell with a voltage sensing line in order to sense the voltage of each battery cell; and installing a fuse in a connector which is arranged between the battery cell and the voltage sensing line and couples electrode tabs.

摘要翻译： 本发明涉及一种电池组，其中由电池单元组成的多个单元模块相邻或间隔地堆叠，并且电极接头串联连接，更具体地说，涉及一种电池组，该电池组包括能够 防止由保护电路流入的电池单元短路或过电流引起的每个电池单元的损坏：将电池单元的正极和负极接头与电压感测线连接，以便感测每个电池单元的电压; 以及在连接器中安装保险丝，所述连接器布置在所述电池单元和所述电压感测线之间并且连接电极片。

公开(公告)号：US20120294018A1

公开(公告)日：2012-11-22

申请号：US13522129

申请日：2011-01-11

申请人： Cheol-Hyun Kim ,  Sung-Chul Park

发明人： Cheol-Hyun Kim ,  Sung-Chul Park

IPC分类号： F21V29/00 ,  B23P15/26

CPC分类号： F21V29/74 ,  F21K9/00 ,  F21S2/005 ,  F21S8/086 ,  F21W2131/103 ,  F21Y2115/10 ,  Y10T29/53113

摘要： The present invention relates to an LED illumination apparatus and a manufacturing method thereof. The LED illumination apparatus according to one embodiment of the present invention comprises: a body in which a heat sink including a plurality of heat radiation fins is formed in a first area of a bottom surface portion thereof and in which a light source loading area is formed in a second area different from the first area in the bottom surface portion; a substrate loaded on the light source loading area of the body; and an LED light source module provided on the substrate. According to the present invention, since the heat sink is formed in the bottom surface portion of the body, the reduction of heat radiation efficiency in the LED illumination apparatus due to dust or excrement of birds and the like can be minimized. In addition, since the body is manufactured by extrusion molding, the manufacturing cost of the LED illumination apparatus can be remarkably reduced in comparison with prior die casting. In addition, since the length of the body can be adjusted arbitrarily, the present invention can be designed in various shapes according to a desired heat radiation area.

摘要翻译： 本发明涉及一种LED照明装置及其制造方法。 根据本发明的一个实施例的LED照明装置包括：主体，其中在其底表面部分的第一区域中形成有包括多个散热片的散热片，其中形成有光源装载区域 在与所述底面部的所述第一区域不同的第二区域中， 负载在身体的光源装载区域上的衬底; 以及设置在基板上的LED光源模块。 根据本发明，由于在本体的底面部形成有散热器，所以能够将由于鸟类等的尘埃或排泄物等导致的LED照明装置的散热效率的降低化。 此外，由于通过挤出成型制造了本体，因此与现有的压铸相比，LED照明装置的制造成本可以显着降低。 此外，由于可以任意调整主体的长度，所以可以根据期望的散热面积设计各种形状的本发明。

公开(公告)号：US20120162905A1

公开(公告)日：2012-06-28

申请号：US13384741

申请日：2010-07-08

申请人： Cheol-Hyun Kim ,  Sung-Chul Park

发明人： Cheol-Hyun Kim ,  Sung-Chul Park

IPC分类号： H05K7/20

CPC分类号： B04C3/00 ,  B04C9/00 ,  B04C2009/005 ,  G06F1/20 ,  H05K7/20172

摘要： Disclosed is a fan module used in electronic equipment and the like. The fan module of the present invention comprises: a dust-collecting part which has an air-suction port and an air-discharge port, and which has a rotational region forming a passage linking the air-suction port to the air-discharge port and has a dust-collection box for collecting dust and detritus rotating in the rotational region; and a fan which is joined to one side of the dust-collecting part and makes air flow into the rotational region. The present invention can use centrifugal force to effectively remove various forms of dust and detritus contained in the air which flows into the casings of electronic equipment, household appliances and the like due to the action of a fan. Further, since a filter is not used, there is the advantage that the cooling efficiency is not reduced by the dust collection as the smooth flow of the air being sucked in is not disturbed. Further, from the long-term point of view, the thermal efficiency of electronic equipment and the like can be substantially improved as the amount of dust and detritus accumulated inside electronic equipment is minimised.

摘要翻译： 公开了用于电子设备等的风扇模块。 本发明的风扇模块包括：集尘部，其具有吸气口和排气口，并且具有形成将吸气口与排气口连接的通路的旋转区域和 具有用于收集在旋转区域中旋转的灰尘和碎屑的集尘箱; 以及风扇，其与集尘部的一侧接合并使空气流入旋转区域。 本发明可以使用离心力来有效地去除由于风扇的作用而流入电子设备，家用电器等的壳体中的空气中所含的各种形式的灰尘和碎屑。 此外，由于不使用过滤器，所以具有不吸收空气的平滑流动而不会因集尘而降低冷却效率的优点。 此外，从长期的观点来看，随着电子设备内积聚的灰尘和碎屑的量最小化，电子设备等的热效率可以显着提高。