公开(公告)号：US08450824B2

公开(公告)日：2013-05-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L27/146

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US20130075762A1

公开(公告)日：2013-03-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/62 ,  H05K1/00 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US20120223355A1

公开(公告)日：2012-09-06

申请号：US13222281

申请日：2011-08-31

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。

公开(公告)号：US20120223348A1

公开(公告)日：2012-09-06

申请号：US13221319

申请日：2011-08-30

申请人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20120061640A1

公开(公告)日：2012-03-15

申请号：US13037864

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/06

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部具有不小于10纳米且不大于50微米的当量圆直径。 第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。 第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。 发光层设置在第一半导体层和第二半导体层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US07432535B2

公开(公告)日：2008-10-07

申请号：US11372059

申请日：2006-03-10

申请人： Takanobu Kamakura

发明人： Takanobu Kamakura

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/30

摘要： A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect-injected layer is made of material more fragile than the hetero-configuration. The dense defect-injected layer prevents defects injected into the hetero-configuration.

公开(公告)号：US09318661B2

公开(公告)日：2016-04-19

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US08692283B2

公开(公告)日：2014-04-08

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/40

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US08680561B2

公开(公告)日：2014-03-25

申请号：US13037914

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

公开(公告)号：US20130075778A1

公开(公告)日：2013-03-28

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/40 ,  H01B5/00 ,  B82Y99/00

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。