公开(公告)号：US08241769B2

公开(公告)日：2012-08-14

申请号：US12810782

申请日：2008-12-24

Applicant: Kouji Kitsunai ,  Takashi Maeda

Inventor： Kouji Kitsunai ,  Takashi Maeda

IPC: G11B5/706 ,  G11B5/84 ,  C23F1/00 ,  H05K3/00

CPC classification number: G11B5/7315 ,  G11B5/82

Abstract: A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less.

Abstract translation: 一种磁盘用玻璃基板，其特征在于，在相对于其外周端部的中央部侧的玻璃基板的表面上任意选择的两个位置的区域中，形状波长为60nm的波长的表面形状 在每个区域中从表面形状提取至500μm，并且假设表面形状的均方根粗糙度Rq作为微波特性Rq，则区域的微波特性Rq之差为0.02nm以下，或者 区域的微波的标准偏差之间的差异为0.04nm以下。

公开(公告)号：US20120187466A1

公开(公告)日：2012-07-26

申请号：US13439213

申请日：2012-04-04

Applicant: Takashi Maeda

Inventor： Takashi Maeda

IPC: H01L27/088

CPC classification number: G11C16/04 ,  H01L27/11556 ,  H01L27/11578

Abstract: At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included in a second memory string connected to the same third and fourth conductive layers as the first memory string. At least one of either the memory transistors or the back-gate transistor in the first memory string and at least one of either the memory transistors or the back-gate transistor in the second memory string are connected to the independent first or fifth conductive layers, respectively.

Abstract translation: 包括在第一存储器串中的至少一些存储晶体管共同连接到第一导电层，其连接到连接到与第一存储器相同的第三和第四导电层的第二存储器串中的至少一些存储晶体管 串。 第一存储器串中的存储晶体管或背栅晶体管中的至少一个以及第二存储器串中的存储晶体管或背栅晶体管中的至少一个连接到独立的第一或第五导电层， 分别。

公开(公告)号：US20120154754A1

公开(公告)日：2012-06-21

申请号：US13408540

申请日：2012-02-29

Applicant: Takashi Maeda ,  Nobukazu Maeda ,  Arisa Miyazato

Inventor： Takashi Maeda ,  Nobukazu Maeda ,  Arisa Miyazato

IPC: G03B29/00 ,  G03B31/00

CPC classification number: A63H33/22 ,  A63H3/003 ,  G03B21/00

Abstract: A small projection toy of an incorporation-in-small-article type, the small projection toy configured such that: a small projector including a projection lens barrel and a battery unit can be housed in a small article such as various local specialties, models of animals and vehicles, toys; and an incorporated image film can be watched by projection.

Abstract translation: 一种小型投影式玩具，小型投影玩具被构造成：包括投影透镜镜筒和电池单元的小型投影仪可以容纳在诸如各种当地特色的小型物品中， 动物和车辆，玩具; 并且可以通过投影来观看并入的图像胶片。

公开(公告)号：US20120081761A1

公开(公告)日：2012-04-05

申请号：US13073787

申请日：2011-03-28

Applicant: Naoyuki NAKAMURA ,  Takashi MAEDA

Inventor： Naoyuki NAKAMURA ,  Takashi MAEDA

IPC: H04N1/04

CPC classification number: H04N1/00803 ,  H04N1/00962 ,  H04N2201/0094 ,  H04N2201/0098

Abstract: An image reader includes a reading unit that is configured to read an image on a document sheet to generate read data, a counting unit that is configured to count a number of pixels of the read data having more than a predetermined gray level, a determining unit that determines that the document sheet is blank when the number of pixels counted by the counting unit is not exceeding a threshold value, a display unit that is configured to display the number of pixels counted by the counting unit and the threshold value when the document sheet has been determined to be blank, in a manner that the number of pixels can be compared with the threshold value, and a changing unit that changes the threshold value.

Abstract translation: 图像读取器包括：读取单元，被配置为读取文档片上的图像以生成读取数据;计数单元，被配置为对具有多于预定灰度级的读取数据的像素数进行计数;确定单元 当由所述计数单元计数的像素数不超过阈值时，所述文档片材为空白;显示单元，被配置为显示由所述计数单元计数的像素数量和所述文档片材的阈值 已经被确定为空白，以像素的数量可以与阈值进行比较，以及改变单元改变阈值。

公开(公告)号：US20120043601A1

公开(公告)日：2012-02-23

申请号：US13275436

申请日：2011-10-18

Applicant: Takashi MAEDA ,  Yoshihisa Iwata

Inventor： Takashi MAEDA ,  Yoshihisa Iwata

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate.

Abstract translation: 在非易失性半导体存储器件中，通过在硅衬底上交替堆叠电介质膜和导电膜来形成层叠体，并且以矩阵形式形成沿堆叠方向延伸的多个通孔。 分路互连和位互连设置在堆叠体的上方。 导体支柱埋设在多个通孔中的分流互连的正下方配置的贯通孔的内侧，半导体柱埋设在剩余通孔的内部。 导电柱由金属或低电阻硅形成。 其上端部连接到分路互连，并且其下端部连接到形成在硅衬底的上层部分中的电池源。

公开(公告)号：US20110254699A1

公开(公告)日：2011-10-20

申请号：US13141041

申请日：2010-03-02

Applicant: Hisashi Sugawara ,  Shigeki Morita ,  Takashi Maeda ,  Hiroshi Araki ,  Yukio Goto ,  Yuji Igarashi

Inventor： Hisashi Sugawara ,  Shigeki Morita ,  Takashi Maeda ,  Hiroshi Araki ,  Yukio Goto ,  Yuji Igarashi

IPC: G08G1/00

CPC classification number: G08G1/164 ,  H04W4/04

Abstract: A vehicle-mounted narrow-band wireless communication apparatus includes: information storing/managing section 905 for storing and managing roadside information from a wireless communication unit and operating condition information from an operating condition detection unit 903; an information provision determination unit 904 for determining whether or not information can be provided on the basis of the roadside information and the operating condition information; an HMI output control unit 906 for controlling HMI output on the basis of a determination result from the information provision determination unit 904 and environment information relating to a junction neighbourhood obtained from a parameter management unit 907 for managing parameters relating to an HMI; and an information provision output apparatus 901 for performing information provision on the basis of an HMI output request transmitted from the HMI output control unit 906.

Abstract translation: 车载窄带无线通信装置包括：信息存储/管理部分905，用于从无线通信单元存储和管理路边信息和来自操作条件检测单元903的操作条件信息; 信息提供确定单元904，用于基于路边信息和操作条件信息确定是否可以提供信息; 用于控制从所述信息提供判定单元904和与从参数管理单元907用于管理与到HMI参数而获得的结附近的环境信息的判定结果的基础上，HMI输出HMI输出控制单元906; 以及信息提供输出装置901，用于根据从HMI输出控制单元906发送的HMI输出请求执行信息提供。

公开(公告)号：US07933151B2

公开(公告)日：2011-04-26

申请号：US12564576

申请日：2009-09-22

Applicant: Takashi Maeda ,  Yoshihisa Iwata

Inventor： Takashi Maeda ,  Yoshihisa Iwata

IPC: G11C16/00

CPC classification number: G11C16/0483 ,  G11C5/02 ,  G11C7/18 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11565 ,  H01L27/11578 ,  H01L27/11582

Abstract: Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.

Abstract translation: 存储器串包括：第一半导体层，包括沿垂直于衬底的方向延伸的柱状部分; 形成为围绕所述柱状部的侧面的第一电荷存储层; 以及形成为围绕所述第一电荷存储层的第一导电层。 第一选择晶体管包括：从柱状部分的顶表面向上延伸的第二半导体层; 形成为包围第二半导体层的侧面的第二电荷存储层; 以及形成为围绕所述第二电荷存储层的第二导电层。 非易失性半导体存储装置还包括控制电路，其在从所选择的一个存储器串中读取数据之前，将电荷累积在连接到第一选择晶体管的第一选择晶体管的第二电荷存储层中 取消选择一个内存字符串。

公开(公告)号：US20110063916A1

公开(公告)日：2011-03-17

申请号：US12727827

申请日：2010-03-19

Applicant: Takashi MAEDA

Inventor： Takashi MAEDA

IPC: G11C16/02

CPC classification number: G11C16/04 ,  H01L27/11556 ,  H01L27/11578

Abstract: At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included in a second memory string connected to the same third and fourth conductive layers as the first memory string. At least one of either the memory transistors or the back-gate transistor in the first memory string and at least one of either the memory transistors or the back-gate transistor in the second memory string are connected to the independent first or fifth conductive layers, respectively.

Abstract translation: 包括在第一存储器串中的至少一些存储晶体管共同连接到第一导电层，其连接到连接到与第一存储器相同的第三和第四导电层的第二存储器串中的至少一些存储晶体管 串。 第一存储器串中的存储晶体管或背栅晶体管中的至少一个以及第二存储器串中的存储晶体管或背栅晶体管中的至少一个连接到独立的第一或第五导电层， 分别。

公开(公告)号：US07776486B2

公开(公告)日：2010-08-17

申请号：US11710555

申请日：2007-02-26

Applicant: Yoshio Tarutani ,  Akira Seki ,  Takashi Maeda ,  Wataru Takahashi ,  Takashi Doi

Inventor： Yoshio Tarutani ,  Akira Seki ,  Takashi Maeda ,  Wataru Takahashi ,  Takashi Doi

IPC: H01M8/10 ,  H01M2/16

CPC classification number: H01M8/0206 ,  C22C14/00 ,  C22C32/0073 ,  H01M8/0204 ,  H01M8/0208 ,  H01M8/0226 ,  H01M8/0228 ,  H01M8/10 ,  H01M2008/1095 ,  Y02P70/56

Abstract: A separator material effective for decreasing the weight of fuel cells is provided which is lightweight, has good corrosion resistance, and exhibits a minimized increase in electrical contact resistance during use for a long period. Titanium or a titanium alloy is prepared by melting so as to contain not greater than 5 mass % B, thereby forming a titanium-based material in which fine TiB-type boride particles are precipitated and dispersed. The material is then etched in an aqueous acidic solution such that some of the TiB-type boride particles are exposed on the surface through the passive film formed thereon.

Abstract translation: 提供了一种有效降低燃料电池重量的分离器材料，其重量轻，具有良好的耐腐蚀性，并且在长期使用期间表现出最小化的电接触电阻增加。 通过熔化制备钛或钛合金，使其含有不大于5质量％的B，从而形成其中细小的TiB型硼化物颗粒沉淀和分散的钛基材料。 然后将材料在酸性水溶液中蚀刻，使得一些TiB型硼化物颗粒通过其上形成的钝化膜在表面上暴露。

公开(公告)号：US07571033B2

公开(公告)日：2009-08-04

申请号：US11030309

申请日：2005-01-07

Applicant: Hiroshi Fujioka ,  Takanori Matsunaga ,  Takashi Maeda ,  Toshinori Matsui ,  Masahiko Kurishige ,  Hideyuki Tanaka

Inventor： Hiroshi Fujioka ,  Takanori Matsunaga ,  Takashi Maeda ,  Toshinori Matsui ,  Masahiko Kurishige ,  Hideyuki Tanaka

IPC: G01M17/00 ,  G06F7/00 ,  G06F19/00

CPC classification number: B62D6/005 ,  B60T2230/02 ,  B60T2260/02 ,  B62D6/04

Abstract: System for detecting stability/instability of behavior of a motor vehicle upon occurrence of tire slip or lock. State of the motor vehicle is determined on the basis of an alignment torque (Ta) applied from a road and a side slip angle (β). By taking advantage of such torque/slip-angle characteristic that although the alignment torque is proportional to a side slip angle when the latter is small, the alignment torque becomes smaller as the side slip angle increases, a normal value is determined from a straight line slope and the side slip angle in a region where the latter is small. Unstable behavior of the motor vehicle is determined when deviation of actual measured value from the normal value increases. Further, unstable state is determined when the slope of the alignment torque for the slip angle departs significantly from that of approximate straight line slope.

Abstract translation: 用于在发生轮胎滑动或锁定时检测机动车辆的行为的稳定性/不稳定性的系统。 基于从道路施加的对准扭矩（Ta）和侧滑角（β）来确定机动车辆的状态。 通过利用这样的扭矩/滑移角特性，即使在后者较小时，对位转矩与侧滑角成比例，随着侧滑角增大，对位转矩变小，从直线 斜率和侧滑角在后者较小的区域。 当实际测量值与正常值的偏差增加时，确定机动车辆的不稳定行为。 此外，当滑移角的对准扭矩的斜率与近似直线斜率的斜率大大偏离时，确定不稳定状态。