公开(公告)号：US20070272927A1

公开(公告)日：2007-11-29

申请号：US11695769

申请日：2007-04-03

申请人： Toru Takeguchi ,  Kaoru Motonami

发明人： Toru Takeguchi ,  Kaoru Motonami

IPC分类号： H01L29/04 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78603 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT according to an embodiment of the present invention includes an insulative base film formed on a TFT array substrate, and a semiconductor film including a channel region formed on the base film, in which an impurity concentration of a channel region in the semiconductor film becomes substantially uniform in a film thickness direction of the semiconductor film, the impurity concentration of the channel region is discontinuous at a boundary between the semiconductor film and the base film, and an impurity concentration of the base film is lower than an impurity concentration of the semiconductor film and is monotonously decreased toward the TFT array substrate.

摘要翻译： 根据本发明实施例的TFT包括形成在TFT阵列基板上的绝缘性基底膜，以及包括在基膜上形成的沟道区的半导体膜，其中半导体膜中沟道区的杂质浓度变为 在半导体膜的膜厚方向上基本均匀，沟道区域的杂质浓度在半导体膜和基膜之间的边界处不连续，并且基膜的杂质浓度低于半导体膜的杂质浓度 并且朝向TFT阵列基板单调减少。

公开(公告)号：US06252247B1

公开(公告)日：2001-06-26

申请号：US09168091

申请日：1998-10-08

申请人： Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

发明人： Kazuyuki Sakata ,  Kazunori Inoue ,  Toru Takeguchi ,  Nobuhiro Nakamura ,  Masaru Yamada

IPC分类号： H01L2702

CPC分类号： H01L29/66765 ,  G02F2001/136295 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.

摘要翻译： 一种薄膜晶体管（TFT）装置，包括：第一电极，其包括形成在透明绝缘基板上的栅极，源极和漏极中的至少一个;覆盖第一电极和透明绝缘基板的绝缘膜层;以及透明 膜电极形成在绝缘膜层上。 第一电极包括由纯Al或Al合金制成的第一层和由添加到Al或Al合金中的选自N，O，Si和C中的一种的杂质形成的第二层。 第一电极的第二层设置在透明膜电极和第一电极的第一层之间的互连处。

公开(公告)号：US6148653A

公开(公告)日：2000-11-21

申请号：US367345

申请日：1999-08-12

申请人： Akira Sako ,  Toru Takeguchi ,  Syuji Maniwa ,  Masashi Yoshikawa

发明人： Akira Sako ,  Toru Takeguchi ,  Syuji Maniwa ,  Masashi Yoshikawa

IPC分类号： B21B37/52 ,  B21B37/68 ,  B21B37/72

CPC分类号： B21B37/52 ,  B21B37/68 ,  B21B2273/16

摘要： The present invention aims to provide a rolling system and a rolling method capable of avoiding the occurrence of a pinch fold by effectively preventing the zigzag movement of a rear end portion of a material to be rolled. The rotational speeds (rolling speeds) of work rolls (2) of a rolling mill stand (F.sub.1) from which the rear end of a plate material (6) releases, and a succeeding rolling mill stand (F.sub.2) are controlled to the same value. Moreover, the tension between the rolling mill stand (F.sub.1) and the rolling mill stand (F.sub.2) is controlled to zero. The difference in tension between a work side and a drive side can be made null between the rolling mill stand (F.sub.1) and the rolling mill stand (F.sub.2). Similarly, the difference in tension between the work side and the drive side can be made null between the plurality of rolling mill stands (F.sub.2 to F.sub.n) during release of the rear end of the plate material (6).

摘要翻译： PCT No.PCT / JP98 / 05594 Sec。 371日期1999年8月12日 102（e）日期1999年8月12日PCT提交1998年12月11日PCT公布。 出版物WO99 /​​ 30848 日期：1999年6月24日本发明旨在提供一种通过有效地防止待轧制材料的后端部的之字形移动来提供能够避免发生折痕的轧制系统和轧制方法。 将板材（6）的后端从其排出的轧机机架（F1）和后续轧机机座（F2）的工作辊（2）的转速（轧制速度）控制为相同的值 。 此外，轧机机架（F1）和轧机机架（F2）之间的张力被控制为零。 在轧机机架（F1）和轧机机架（F2）之间可以使作业侧和驱动侧之间的张力差为零。 类似地，在板材（6）的后端的释放期间，在多个轧机机架（F2至Fn）之间可以使作业侧和驱动侧之间的张力差为零。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20120113376A1

公开(公告)日：2012-05-10

申请号：US13281893

申请日：2011-10-26

申请人： Masami HAYASHI ,  Osamu Miyagawa ,  Toru Takeguchi ,  Shinichi Yano ,  Yasuyoshi Itoh ,  Shingo Nagano

发明人： Masami HAYASHI ,  Osamu Miyagawa ,  Toru Takeguchi ,  Shinichi Yano ,  Yasuyoshi Itoh ,  Shingo Nagano

IPC分类号： G02F1/1343 ,  H01L29/786

CPC分类号： H01L27/124 ,  G02F1/13452 ,  G02F1/136286

摘要： A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.

摘要翻译： 具有阵列区域和框架区域的本发明的薄膜晶体管阵列基板，薄膜晶体管阵列基板包括：薄膜晶体管; 由与同层的源极和漏极相同的材料形成的上部金属图案; 透明导电膜图案; 和上层绝缘膜，其中透明导电膜图案具有：从顶侧观察设置为位于电极图案的图案和金属图案的图案之一内的第一类型透明导电膜图案， 并且不覆盖电极图案或金属图案的图案端面; 以及第二类型的透明导电膜图案，设置成从顶侧观察到从图案的至少一部分的内侧伸出并覆盖图案端面。

公开(公告)号：US20100112790A1

公开(公告)日：2010-05-06

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/20 ,  H01L21/268

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US07642605B2

公开(公告)日：2010-01-05

申请号：US11054384

申请日：2005-02-10

申请人： Toru Takeguchi ,  Kazuyuki Sugahara

发明人： Toru Takeguchi ,  Kazuyuki Sugahara

IPC分类号： H01L23/62

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

摘要翻译： 半导体器件包括具有主表面的玻璃衬底，形成在主表面上的多晶硅膜，具有形成的沟道区，并且具有形成在沟道区的相对侧上的源极区和漏极区，栅极绝缘膜设置为 与多晶硅膜接触并含有氧，以及设置在与栅极绝缘膜相对的沟道区的位置的栅电极。 多晶硅膜的厚度大于50nm且不大于150nm。 多晶硅膜含有不小于0.5原子％且不大于10原子％的比例的氢。 通过这样的结构，提供了获得大的漏极电流并具有期望的电特性的半导体器件。

公开(公告)号：US07538347B2

公开(公告)日：2009-05-26

申请号：US11450332

申请日：2006-06-12

申请人： Toru Takeguchi ,  Osamu Miyakawa

发明人： Toru Takeguchi ,  Osamu Miyakawa

IPC分类号： H01L31/00

CPC分类号： H01L29/78696 ,  H01L27/0203 ,  H01L27/1296 ,  H01L29/78666

摘要： A thin film transistor includes: an insulation substrate; a semiconductor layer formed on the insulation substrate including, conductive regions that includes impurity, and a channel region sandwiched between the conductive regions; an insulation layer that covers the semiconductor layer; a gate electrode that is formed on the insulator layer at a position where opposes the channel region; and a source electrode and a drain electrode connected to the conductive regions. The channel region divided into a plurality of channel regions and each of channel widths of the plurality of channel regions is in a range from 5 μm to 30 μm.

摘要翻译： 薄膜晶体管包括：绝缘基板; 形成在所述绝缘基板上的包括包含杂质的导电区域和夹在所述导电区域之间的沟道区域的半导体层; 覆盖半导体层的绝缘层; 在与所述沟道区域相对的位置处形成在所述绝缘体层上的栅电极; 以及连接到导电区域的源电极和漏电极。 被分成多个通道区域的通道区域和多个通道区域的每个通道宽度在5μm到30μm的范围内。

公开(公告)号：US20080048187A1

公开(公告)日：2008-02-28

申请号：US11836312

申请日：2007-08-09

申请人： Toru TAKEGUCHI ,  Shinsuke Yura

发明人： Toru TAKEGUCHI ,  Shinsuke Yura

IPC分类号： H01L29/06 ,  G21K5/00 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L21/02675 ,  B23K26/064 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/40 ,  B23K2101/42 ,  B23K2103/50 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.

摘要翻译： 根据本发明实施例的半导体薄膜包括：通过向非晶半导体薄膜施加激光而形成的多晶半导体薄膜; 以及排列成尺寸为激光的振荡波长的约1/2的晶格形状的晶粒。

公开(公告)号：US07148091B2

公开(公告)日：2006-12-12

申请号：US11196574

申请日：2005-08-04

申请人： Yasuyoshi Itoh ,  Takeshi Kubota ,  Toru Takeguchi

发明人： Yasuyoshi Itoh ,  Takeshi Kubota ,  Toru Takeguchi

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L29/78621 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78627

摘要： Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.