CONTINUOUS WAVE ULTRASOUND FOR ANALYSIS OF A SURFACE

    公开(公告)号:US20180372695A1

    公开(公告)日:2018-12-27

    申请号:US16064719

    申请日:2016-12-21

    Abstract: A continuous wave ultrasound analysis device for analysing a surface of a component includes an input to receive ultrasound data relating to continuous wave, swept frequency ultrasound propagated through the component; a processing section to derive a standing wave amplitude spectrum from the received ultrasound data, and determine a property of an unconstrained layer on the surface based on the standing wave amplitude spectrum; and an output to output the determined property of the layer. A method of continuous wave ultrasound for analysing a surface is also provided.

    SILICA SYNTHESIS
    14.
    发明申请
    SILICA SYNTHESIS 审中-公开

    公开(公告)号:US20180282169A1

    公开(公告)日:2018-10-04

    申请号:US15757182

    申请日:2016-09-01

    Abstract: A method for the production of a silica includes (1) reacting a silicic acid solution with an amine, to precipitate the silica from an aqueous solvent system. The method also includes removing at least a portion of the amine associated with the precipitated silica by treating the silica in an aqueous solvent system at a pH that is reduced from that of the reaction mixture (2). The reduction in pH may be by first reducing the pH of the aqueous solvent system, and then removing the silica from the aqueous solvent system. Alternatively the reduction in pH may be removing the silica from the aqueous solvent system first, before treating the silica with an aqueous solvent at a pH below that of the silica forming reaction. Subsequently the silica is removed from the solution (3).

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    18.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
    半导体发光元件

    公开(公告)号:US20160336480A1

    公开(公告)日:2016-11-17

    申请号:US15110991

    申请日:2015-01-07

    CPC classification number: H01L33/06 H01L33/08 H01L33/24 H01L33/30 H01L33/32

    Abstract: A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.

    Abstract translation: 半导体发光元件包括:设置在基板10上的下包层12; 设置在下包层12上的有源层20,包括量子阱层24和与量子阱层24一起夹着第二阻挡层22b的多个量子点28; 以及设置在有源层20上的上覆盖层14,其中量子阱层24与多个量子点28之间的距离D小于多个量子点28的中心之间的距离X的平均值。

Patent Agency Ranking