公开(公告)号：US5542559A

公开(公告)日：1996-08-06

申请号：US195282

申请日：1994-02-14

申请人： Satoru Kawakami ,  Tsuyoshi Suzuki ,  Junichi Arami ,  Yoichi Deguchi

发明人： Satoru Kawakami ,  Tsuyoshi Suzuki ,  Junichi Arami ,  Yoichi Deguchi

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

CPC分类号： H01J37/3244 ,  H01L21/6838

摘要： In order to prevent any possible electrical discharge between a lower electrode and a grounded member through a backside gas supply conduit when performing a plasma treatment with a supply of a backside gas such as He gas to the backside of a semiconductor wafer being held by an electromagnetic chuck on the lower electrode for the generation of a plasma within a plasma treatment chamber, the gas supply conduit is fitted therein with cylindrical flowpath members made of two types of electrically insulating materials each having a multiplicity of axially extending small-diameter conduction holes, at a position within an electrically insulating body disposed between the lower electrode and a grounded member. The small diameter conduction holes in the backside gas flowpath serve to increase an electrical discharge start voltage for the prevention of electrical discharge. The formation of the multiplicity of conduction holes provides a large conductance. The backside gas is exhausted by way of the gas supply conduit after the completion of the plasma treatment. Consequently, water is prevented from remaining between the wafer and the electromagnetic chuck or within the treatment chamber, whereby it is possible to remove the electric charge the wafer and to shorten the time required for the exhausting of the treatment chamber.

摘要翻译： 为了通过背面气体供给导管在通过向诸如He气体之类的背面气体的供给进行等离子体处理之后的任何可能的放电到半导体晶片的背面，由半导体晶片保持的电磁 卡在下电极上用于在等离子体处理室内产生等离子体，气体供应管道装配有由两种电绝缘材料制成的圆柱形流路构件，每个电绝缘材料具有多个轴向延伸的小直径导电孔， 设置在下电极和接地部件之间的电绝缘体内的位置。 背侧气体流路中的小直径导通孔用于增加用于防止放电的放电开始电压。 多个导电孔的形成提供了大的电导。 在完成等离子体处理之后，背面气体通过气体供应导管排出。 因此，防止水留在晶片和电磁卡盘之间或处理室内，从而可以去除晶片的电荷并缩短处理室的排出所需的时间。

公开(公告)号：US07852059B2

公开(公告)日：2010-12-14

申请号：US11902089

申请日：2007-09-19

申请人： Takuya Ishii ,  Mikio Motomori ,  Kazuhito Kimura ,  Yoichi Deguchi ,  Satoshi Wada ,  Yoshihisa Minami

发明人： Takuya Ishii ,  Mikio Motomori ,  Kazuhito Kimura ,  Yoichi Deguchi ,  Satoshi Wada ,  Yoshihisa Minami

IPC分类号： G05F1/40

CPC分类号： G05F1/575

摘要： A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

摘要翻译： 电源装置包括通过切换进行充电或放电控制的电感器，使得DC输入电压升压，以及电容器，其使升压电压平滑以产生DC输出电压。 具体地，电源装置还包括连接在电感器和电容器之间的晶体管，以实现整流功能; 输出电压确定电路，其参考DC输入电压和DC输出电压以确定这些电压的电平; 以及电流控制电路，其控制流过所述晶体管的电流，使得当所述输出电压确定电路确定所述DC输出电压低于所述DC输入电压时，所述电流具有预定值。

公开(公告)号：US20080079315A1

公开(公告)日：2008-04-03

申请号：US11905052

申请日：2007-09-27

申请人： Mikio Motomori ,  Takuya Ishii ,  Yoichi Deguchi

发明人： Mikio Motomori ,  Takuya Ishii ,  Yoichi Deguchi

IPC分类号： H02J1/10

CPC分类号： H02M3/158 ,  H02M2001/007 ,  H02M2001/009 ,  Y10T307/50

摘要： A semiconductor integrated circuit (10A) which converts an input supply voltage (Vi=2.5 to 4 V) applied to an input terminal (P1) into a first output voltage (Vo1=5 V) and outputs the first output voltage from an output terminal (P2), includes a first control circuit (17) which supplies a switching unit (11, 12, 13, 14) interposed between the input terminal (P1) and the output terminal (P2) with a switching signal so as to bring a feedback voltage (Vf1) based on an output voltage of the output terminal (P2) close to a target value; and an external setting terminal (P3) which sets the feedback voltage (Vf1) to a prescribed potential regardless of voltage of the output terminal (P2).

摘要翻译： 一种半导体集成电路（10A），其将施加到输入端子（P 1）的输入电源电压（Vi = 2.5至4V）转换为第一输出电压（Vo 1 = 5V）并将第一输出电压从 输出端子（P 2）包括第一控制电路（17），其将插入在输入端子（P1）和输出端子（P 2）之间的开关单元（11,12,13,14） 信号，使得基于输出端子（P 2）的输出电压接近目标值的反馈电压（Vf 1）; 以及将反馈电压（Vf 1）设定为规定电位的外部设定端子（P 3），而与输出端子（P 2）的电压无关。

公开(公告)号：US06837631B2

公开(公告)日：2005-01-04

申请号：US09928409

申请日：2001-08-14

申请人： Masayuki Nakano ,  Yoichi Deguchi

发明人： Masayuki Nakano ,  Yoichi Deguchi

IPC分类号： G03F7/40 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  G03D5/00

CPC分类号： G03F7/40 ,  G03F7/2024 ,  G03F7/3021

摘要： A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

公开(公告)号：US5937223A

公开(公告)日：1999-08-10

申请号：US966247

申请日：1997-11-07

申请人： Masami Akimoto ,  Yoichi Deguchi

发明人： Masami Akimoto ,  Yoichi Deguchi

IPC分类号： H01L21/00 ,  H01L21/677 ,  G03D5/00 ,  B65G49/07

CPC分类号： H01L21/67178 ,  H01L21/6715 ,  H01L21/67184 ,  Y10S414/135

摘要： A processing apparatus comprises a plurality of processing sets, each set including a transport path extending vertically, a plurality of processing sections which are provided around the transport path and each have a plurality of processing units laid one on top of another vertically, which each perform a specific process on objects, and a main transport mechanism which moves along the transport path, loads the objects on and unloads the objects from each processing unit in the plurality of processing sections, and an inter-set transport mechanism for transporting objects between the adjacent processing sets.

摘要翻译： 处理装置包括多个处理集合，每个处理集合包括垂直延伸的传送路径，多个处理部分，设置在传送路径周围，并且每个处理部分具有垂直放置在另一个垂直方向上的多个处理单元，每个处理部分执行 对象的特定处理以及沿着传送路径移动的主传送机构，在多个处理部中从各处理单元加载对象并卸载对象，以及用于在相邻的处理单元之间传送对象的集合间传送机构 处理集。

公开(公告)号：US5923915A

公开(公告)日：1999-07-13

申请号：US962548

申请日：1997-10-31

申请人： Masami Akimoto ,  Yoichi Deguchi

发明人： Masami Akimoto ,  Yoichi Deguchi

IPC分类号： G03F7/16 ,  G03F7/30 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/68 ,  G03D5/00

CPC分类号： H01L21/6715 ,  H01L21/68

摘要： A resist processing method in which a substrate is successively transferred by an arm mechanism into a plurality of process units for successively processing the substrate, comprising the steps of (a) loading a substrate having a reference region which is aligned as desired relative to the process unit and the arm mechanism in a horizontal plane, into the process unit, the substrate being held substantially horizontal by a spin chuck surrounded by a drain cup, (b) rotating the spin chuck holding the substrate and supplying a process solution onto the substrate rotated together with the spin chuck, (c) stopping the supply of the process solution and also stopping rotation of the substrate, (d) detecting a position of the reference region in the horizontal plane of the substrate held on the spin chuck, (e) rotating the substrate together with the spin chuck based on the position detected in the step (d) to permit the reference region of the substrate to be aligned with an initial position in the step (a) of loading the substrate into the process unit, and (f) unloading the substrate out of the process unit when the substrate is rotated to a position at which the reference region of the substrate is aligned with the initial position.

摘要翻译： 一种抗蚀剂处理方法，其中通过臂机构连续地将基板转移到用于连续处理所述基板的多个处理单元中，所述方法包括以下步骤：（a）加载具有相对于所述方法根据需要对准的参考区域的基板 单元和臂机构在水平平面中，进入处理单元，基板由被排水杯包围的旋转卡盘保持基本水平，（b）旋转保持基板的旋转卡盘，并将处理溶液供应到旋转的基板上 （c）停止加工溶液的供给并停止基板的旋转，（d）检测保持在旋转卡盘上的基板的水平面中的参考区域的位置，（e） 基于步骤（d）中检测到的位置，使旋转卡盘旋转基板，使基板的参考区域与初始位置 在将衬底装载到处理单元中的步骤（a）中的n（n），以及（f）当衬底旋转到衬底的参考区域与初始位置对准的位置时，将衬底卸出处理单元 。

公开(公告)号：US5474641A

公开(公告)日：1995-12-12

申请号：US138439

申请日：1993-10-20

申请人： Hayashi Otsuki ,  Yoichi Deguchi

发明人： Hayashi Otsuki ,  Yoichi Deguchi

IPC分类号： C23C16/44 ,  C23C8/06 ,  C30B33/12 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  C23F1/02

CPC分类号： H01L21/67167 ,  C23C8/06 ,  H01L21/67057 ,  H01L21/68707 ,  H01L21/68728 ,  Y10S414/136 ,  Y10S414/139 ,  Y10S414/141 ,  Y10S438/928

摘要： The present invention relates to a processing chamber that processes an object to be processed in an atmosphere of a processing gas. The processing chamber is provided with a mounting stand having a holder mechanism that holds the object to be processed within the processing chamber. The mounting stand is connected to a rotational mechanism and is free to rotate, and the holder mechanism on the mounting stand is also provided with a separate, independent rotational mechanism whereby the front surface and rear surface of the object to be processed can be rotated (inverted) relative to the mounting stand. Thus the present invention provides a processing method and apparatus therefor in which the front surface and rear surface of the object to be processed can be processed under the same conditions, without having to change the atmospheric status of the object to be processed.

摘要翻译： 处理室技术领域本发明涉及在处理气体的气氛中对被处理物进行处理的处理室。 处理室设置有具有保持机构的安装台，该保持机构将待处理物体保持在处理室内。 安装台连接到旋转机构并且自由旋转，并且安装台上的保持器机构还设置有单独的独立的旋转机构，由此待处理物体的前表面和后表面可以旋转（ 倒置）相对于安装支架。 因此，本发明提供了一种处理方法和装置，其中待处理物体的前表面和后表面可以在相同条件下进行处理，而不必改变待处理物体的大气状态。

公开(公告)号：US07605522B2

公开(公告)日：2009-10-20

申请号：US11948734

申请日：2007-11-30

申请人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

发明人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

IPC分类号： H01L41/187

CPC分类号： H01L41/083 ,  C04B35/493 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/6025 ,  C04B2235/6584 ,  C04B2235/79 ,  H01L41/0477 ,  H01L41/1876 ,  H01L41/273 ,  H01L41/297

摘要： A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pbα−aMea[(MII1/3MV(2+b)/3)zTixZr1−x−z]O3 (wherein Me represe element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05≦z≦0.40, 0

摘要翻译： 通过同时焙烧主要由通式ABO 3表示的钙钛矿复合氧化物和主要由铜构成的电极的压电陶瓷，形成压电元件。 压电陶瓷由Pbalpha-aMea [（MII1 / 3MV（2 + b）/ 3）zTixZr1-xz] O3（其中Me代表元素，MII是作为二价金属元素的受体元素，MV是供体 元素，其为五价金属元素），并且满足等式0.05 <= z <= 0.40,0

公开(公告)号：US20080231147A1

公开(公告)日：2008-09-25

申请号：US12131371

申请日：2008-06-02

申请人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

发明人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

IPC分类号： H01L41/047 ,  H01L41/22

CPC分类号： H01L41/1876 ,  C04B35/493 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/6025 ,  C04B2235/656 ,  H01L41/083 ,  H01L41/273 ,  Y10T29/42

摘要： A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

摘要翻译： 一种多层压电器件，包括具有交替堆叠的内部电极层和压电陶瓷层的主体。 内部电极层含有Cu作为主要成分，压电陶瓷层含有以Pb（Ti，Zr）O 3 3为主成分的复合氧化物和金属氧化物（Nb < 2个O 2，5个O 2，5个O 2，5个O 2，5个O 2，5个O 2， 含有作为五价金属元素和六价金属元素中的至少一种的Nb，Sb，Ta或W的三元共聚物或WO 3 3纳入压电陶瓷层中，使得 金属氧化物的浓度随着与内部电极层的距离而减小。 因此，即使在内部电极含有Cu作为主要成分的情况下，也可以提供能够通过低温烧制获得的多层压电器件，同时确保足够的压电常数。

公开(公告)号：US07031792B2

公开(公告)日：2006-04-18

申请号：US10114248

申请日：2002-04-03

申请人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

发明人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

IPC分类号： G06F19/00 ,  H01L21/30

CPC分类号： G11C29/006

摘要： A processing apparatus comprises a process apparatus body equipped with a plurality of process sections for applying a predetermined processing to a target object and a transfer device for transferring the target object among the process sections, a first control section for controlling the entire process apparatus body including the transfer device, a second control section for controlling the plural process sections, an information storage section receiving the signal exchanged between the first control section and the second control section and storing a plurality of information including the information corresponding to the received signal, and an information storage selecting mechanism for selecting the storing frequency of the information to the information storage section in accordance with the kind of the information.