公开(公告)号：US08835826B2

公开(公告)日：2014-09-16

申请号：US13611607

申请日：2012-09-12

Applicant: Yong-Jei Lee ,  Yoon-Dong Park ,  Young-Gu Jin

Inventor： Yong-Jei Lee ,  Yoon-Dong Park ,  Young-Gu Jin

IPC: H01L27/00 ,  G01J1/02 ,  G01S17/89 ,  G01J1/18 ,  G01J1/44 ,  G01S7/491 ,  H04N5/369

CPC classification number: G01J1/44 ,  G01J1/0228 ,  G01J1/18 ,  G01S7/4914 ,  G01S17/89 ,  H04N5/3696

Abstract: A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.

Abstract translation: 用于在第一操作模式（高入射光强度）或第二操作模式（低入射光强度）中的检测周期和输出周期中操作的深度传感器的像素电路。 像素电路包括响应于入射光而产生电荷的光接收单元，信号生成单元响应于在检测周期期间的发送信号，复位信号和选择信号在FDN中累积电荷，并且生成具有 对应于在输出周期期间在FDN处显现的电压的电平，以及耦合在电源电压和光接收单元之间的刷新晶体管，并且响应于刷新信号将电荷放电到电源电压。

公开(公告)号：US08451362B2

公开(公告)日：2013-05-28

申请号：US12461608

申请日：2009-08-18

Applicant: Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

Inventor： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

IPC: H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract translation: 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

公开(公告)号：US20100133638A1

公开(公告)日：2010-06-03

申请号：US12591724

申请日：2009-11-30

Applicant: Jong Eun Park ,  Jung Chak Ahn ,  Yong Jei Lee ,  Dong-Yoon Jang

Inventor： Jong Eun Park ,  Jung Chak Ahn ,  Yong Jei Lee ,  Dong-Yoon Jang

IPC: H01L31/0224 ,  H01L21/768

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

Abstract: An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage.

Abstract translation: 图像传感器包括多个光电二极管，将多个光电二极管彼此隔离的多个阱，以及用于抑制在光电二极管的表面和井中产生的暗电流的多个导电层或导线，以响应于 偏置电压。

公开(公告)号：US20090294816A1

公开(公告)日：2009-12-03

申请号：US12453532

申请日：2009-05-14

Applicant: Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

Inventor： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

IPC: H01L31/112

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14641

Abstract: Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.

Abstract translation: 提供一种CMOS图像传感器及其驱动方法。 CMOS图像传感器可以包括设置在半导体衬底中以累积光电荷的光电检测器，被配置为控制在光电检测器中累积的光电荷的转移的电荷转移元件，被配置为检测由电荷转移元件传送的光电荷的检测元件，以及 良好的驱动接点被配置为在光电荷转移时增加光电检测器和检测元件之间的电位差。

公开(公告)号：US07598481B2

公开(公告)日：2009-10-06

申请号：US11679319

申请日：2007-02-27

Applicant: Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

Inventor： Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

IPC: G01J1/44 ,  H01L27/00

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H04N5/3741 ,  H04N5/3745 ,  H04N5/37452

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.

Abstract translation: 互补金属氧化物半导体（CMOS）图像传感器和驱动CMOS图像传感器的方法，其可以减少多个像素中的每一个所需的器件的数量，并且可以稳定地驱动像素，其中每个像素包括 将光能转换为电信号的光电二极管，将存储在光电二极管中的光载流子传输到浮动漫射区的传输晶体管，具有连接到浮动扩散区的栅极并根据所述浮动扩散区的电压驱动电压信号的驱动晶体管 浮动扩散区域，电压信号被输出到外部设备;以及电容器件，其连接在控制电压源和浮动扩散区域之间，并且当相应像素的感测操作终止时，通过改变像素 根据由控制电压源提供的控制电压，浮动扩散区域的电压。

公开(公告)号：US20070147132A1

公开(公告)日：2007-06-28

申请号：US11641884

申请日：2006-12-20

Applicant: Yong-jei Lee ,  Byung-soo Kim ,  Jung-chak Ahn ,  Jong-eun Park ,  Hyun-suk Kim

Inventor： Yong-jei Lee ,  Byung-soo Kim ,  Jung-chak Ahn ,  Jong-eun Park ,  Hyun-suk Kim

IPC: G11C11/34 ,  G11C16/06

CPC classification number: H04N5/3745 ,  G11C27/00 ,  H04N5/3597 ,  H04N5/374 ,  H04N5/37452

Abstract: A pixel circuit of an image sensor includes a photodiode that generates photocharges corresponding to light input to the photodiode; a transfer transistor that transfers the photocharges to a floating diffusion node in response to a transfer control signal; a reset transistor that transfers a power voltage to the floating diffusion node in response to a reset control signal; a signal output unit that outputs a voltage signal corresponding to a voltage of the floating diffusion node in response to a select control signal; and one or more boosting capacitors connected between a gate of the transfer transistor and the floating diffusion node. The reset transistor is an enhancement type MOSFET. A method of driving the pixel circuit and an image sensor are also disclosed.

Abstract translation: 图像传感器的像素电路包括产生对应于输入到光电二极管的光的光电荷的光电二极管; 转移晶体管，其响应于转移控制信号将光电荷转移到浮动扩散节点; 复位晶体管，其响应于复位控制信号将电源电压传送到所述浮动扩散节点; 信号输出单元，响应于选择控制信号输出与浮动扩散节点的电压对应的电压信号; 以及连接在传输晶体管的栅极和浮动扩散节点之间的一个或多个升压电容器。 复位晶体管是增强型MOSFET。 还公开了驱动像素电路和图像传感器的方法。

公开(公告)号：US08487351B2

公开(公告)日：2013-07-16

申请号：US12591632

申请日：2009-11-25

Applicant: Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

Inventor： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

IPC: H01L27/148

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract translation: 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

公开(公告)号：US20100133635A1

公开(公告)日：2010-06-03

申请号：US12591632

申请日：2009-11-25

Applicant: Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

Inventor： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

IPC: H01L31/024 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract translation: 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

公开(公告)号：US20080035969A1

公开(公告)日：2008-02-14

申请号：US11889501

申请日：2007-08-14

Applicant: Ju-Hyun Ko ,  Yong-Jei Lee ,  Jung-Chak Ahn

Inventor： Ju-Hyun Ko ,  Yong-Jei Lee ,  Jung-Chak Ahn

IPC: H01L31/062 ,  H01L21/02

CPC classification number: H01L27/14643 ,  H01L27/14601 ,  H01L27/14689

Abstract: Example embodiments may provide a CMOS image sensor and example methods of forming the same. Example embodiment CMOS image sensors may include a transfer gate insulating pattern between a transfer gate and an active region. A photodiode region and/or a floating doped region may be in the active region at either side of the transfer gate. The transfer gate insulating pattern may include a first part adjacent to the photodiode region and/or a second part adjacent to the floating doped region. The first part may be thicker than the second part.

Abstract translation: 示例性实施例可提供CMOS图像传感器及其形成方法。 示例性实施例CMOS图像传感器可以包括传输门和有源区之间的传输门绝缘图案。 光电二极管区域和/或浮置掺杂区域可以在传输门的任一侧的有源区中。 传输栅极绝缘图案可以包括与光电二极管区域相邻的第一部分和/或与浮动掺杂区域相邻的第二部分。 第一部分可以比第二部分厚。

公开(公告)号：US20140225173A1

公开(公告)日：2014-08-14

申请号：US14101376

申请日：2013-12-10

Applicant: SEOUNG-HYUN KIM ,  YOON-DONG PARK ,  YONG-JEI LEE ,  JOO-YEONG GONG ,  HEE-WOO PARK ,  SEUNG-WON CHA

Inventor： SEOUNG-HYUN KIM ,  YOON-DONG PARK ,  YONG-JEI LEE ,  JOO-YEONG GONG ,  HEE-WOO PARK ,  SEUNG-WON CHA

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14641

Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Abstract translation: 三维图像传感器的深度像素包括响应于第一光控制信号而导通/截止的第一光栅，第一光检测区域，被配置为基于从被摄体反射的接收光产生第一电荷， 第一光栅被接通，响应于第一传输控制信号而导通/关断的第一传输门;第一浮动扩散区，被配置为当第一传输门 并且第一补偿单元被配置为基于包括在所接收的光中的环境光分量产生与第一电荷不同的第二电荷，以将第二电荷提供给第一浮动扩散区域。