公开(公告)号：US09393665B2

公开(公告)日：2016-07-19

申请号：US13198729

申请日：2011-08-05

申请人： Yu-Piao Wang ,  Jen-Feng Cheng ,  Te-Yang Chen ,  Ya-Ling Chen

发明人： Yu-Piao Wang ,  Jen-Feng Cheng ,  Te-Yang Chen ,  Ya-Ling Chen

IPC分类号： B24B1/00 ,  B24B37/04 ,  B24B37/10 ,  B24B37/26

CPC分类号： B24B37/042 ,  B24B37/105 ,  B24B37/26

摘要： A polishing method and a polishing system are provided. By means of adjusting a rotational center of a polishing article corresponding to positions of a polishing pad or polishing pads, a polishing rate of the polishing article surface has a better uniformity, resulted from compensation of polishing rates at the rotational center of the polishing article.

摘要翻译： 提供了抛光方法和抛光系统。 通过调整与抛光垫或抛光垫的位置相对应的研磨制品的旋转中心，抛光物品表面的抛光速率由抛光物品的旋转中心的抛光速率的补偿得到更好的均匀性。

公开(公告)号：US20100009601A1

公开(公告)日：2010-01-14

申请号：US12428231

申请日：2009-04-22

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B1/00 ,  B24D11/00 ,  B24D18/00

CPC分类号： B24B37/26

摘要： A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

摘要翻译： 提供抛光垫，抛光方法和形成抛光垫的方法。 抛光垫包括抛光层和多个弧槽。 弧形槽设置在抛光层中。 每个弧形槽具有两个端部，并且其至少一个端部具有倾斜壁。 每个槽的倾斜壁与抛光层的表面之间的角度小于90度。

公开(公告)号：US20100003898A1

公开(公告)日：2010-01-07

申请号：US12546198

申请日：2009-08-24

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B41/06 ,  B24B1/00 ,  B24B7/20

CPC分类号： B24B37/32

摘要： The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.

摘要翻译： 经历CMP的衬底上的抛光边缘轮廓的边缘效应或变化通过构造保持环而减少，该保持环容纳在用于保持衬底的载体头中，使得抛光边缘轮廓相对于衬底的中心来回移动 。 实施例包括构造保持环，使得内表面和外表面之间的宽度变化足以补偿抛光边缘轮廓变化的量。 实施例还包括构造保持环，使得从外表面到几何内表面的距离变化。 实施例还包括构造保持环，使得由保持环的内表面保持的衬底的外表面与周边之间的距离变化。

公开(公告)号：US20080090497A1

公开(公告)日：2008-04-17

申请号：US11546350

申请日：2006-10-12

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B7/30 ,  B24B29/00

CPC分类号： B24B37/32

摘要： The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.

摘要翻译： 经历CMP的衬底上的抛光边缘轮廓的边缘效应或变化通过构造保持环而减少，该保持环容纳在用于保持衬底的载体头中，使得抛光边缘轮廓相对于衬底的中心来回移动 。 实施例包括构造保持环，使得内表面和外表面之间的宽度变化足以补偿抛光边缘轮廓变化的量。 实施例还包括构造保持环，使得从外表面到几何内表面的距离变化。 实施例还包括构造保持环，使得由保持环的内表面保持的衬底的外表面与周边之间的距离变化。

公开(公告)号：US20070093191A1

公开(公告)日：2007-04-26

申请号：US11542270

申请日：2006-10-04

申请人： Yu-Piao Wang ,  Yun-Liang Ouyang

发明人： Yu-Piao Wang ,  Yun-Liang Ouyang

IPC分类号： B24D11/00

CPC分类号： B24B37/22 ,  B24B37/26 ,  B24D18/00

摘要： A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.

摘要翻译： 抛光垫，其包括安装表面和具有其上具有至少一个孔的抛光图案的相对的抛光表面，其上形成粘合剂层，粘附层具有均匀的粘合强度。 实施例包括在形成研磨表面上的抛光图案之前，以均匀的压力将粘合剂层施加到安装表面。 实施例还包括形成具有至少一个孔的抛光图案，形成具有与抛光图案相对的表面图案并具有突起的钳具，将钳工件定位在抛光图案上，使得突起填充抛光图案中的孔，形成 复合材料具有基本上平行的相对表面，施加压力以将粘合剂层粘合到安装表面，其间具有基本上均匀的粘合强度，并且去除钳具。

公开(公告)号：US20050272256A1

公开(公告)日：2005-12-08

申请号：US11160983

申请日：2005-07-19

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/28044 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823475 ,  H01L23/5222 ,  H01L29/6653 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device is described. A gate dielectric layer is formed on a substrate, and several gate structures having a gate conductor, a cap layer and spacers are formed on the gate dielectric layer. A mask layer is formed over the substrate covering a portion of the gate structures. Removing the cap layer and spacers that are not covered by the mask layer. After the mask layer is removed, a dielectric layer is formed over the substrate covering the gate structures. A self-aligned contact hole is formed in the dielectric layer. A conductive layer is formed in the self-aligned contact hole and on the dielectric layer. Since the cap layer and spacers that are not covered by the mask layer are removed and substituted by the dielectric layer having lower dielectric constant property, the parasitic capacitance can be reduced.

摘要翻译： 对半导体装置的制造方法进行说明。 在基板上形成栅极介电层，在栅极电介质层上形成具有栅极导体，盖层和间隔物的多个栅极结构。 在覆盖栅极结构的一部分的衬底上形成掩模层。 去除未被掩模层覆盖的盖层和间隔物。 在去除掩模层之后，在覆盖栅极结构的衬底的上方形成介电层。 在电介质层中形成自对准的接触孔。 在自对准接触孔和电介质层上形成导电层。 由于未被掩模层覆盖的覆盖层和间隔物被具有较低介电常数特性的介电层所取代并替代，所以可以减小寄生电容。

公开(公告)号：US08870626B2

公开(公告)日：2014-10-28

申请号：US13472491

申请日：2012-05-16

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B37/26 ,  B24B37/30

CPC分类号： B24B37/26 ,  B24B37/30

摘要： A polishing pad used in conjunction with a carrier ring to polish a substrate and has a motion direction when polishing is provided. The carrier ring has at least one carrier groove, and the substrate has a substrate radius. The polishing pad has a polishing layer and a surface pattern. The surface pattern has traversing grooves, and an angle between the tangent line of each traversing groove and the tangent line of the motion direction is not equal to 0 degree. Each traversing groove respectively has a traversing groove trajectory corresponding to the motion direction, and the traversing groove trajectory of the traversing groove has a trajectory width smaller than the substrate radius. At leading region of the carrier ring corresponding to the motion direction, the traversing grooves have at least one carrier compatible groove which aligns with the at least one carrier groove of the carrier ring.

摘要翻译： 抛光垫与载体环结合使用以抛光基底并具有当抛光时的运动方向。 载体环具有至少一个载体槽，并且基板具有基板半径。 抛光垫具有抛光层和表面图案。 表面图案具有横向槽，并且每个横动槽的切线与运动方向的切线之间的角度不等于0度。 每个横动槽分别具有对应于运动方向的横移槽轨迹，并且横动槽的横向槽轨迹具有小于基板半径的轨迹宽度。 在对应于运动方向的载体环的引导区域处，横向槽具有与载体环的至少一个载体槽对准的至少一个载体相容的槽。

公开(公告)号：US08721394B2

公开(公告)日：2014-05-13

申请号：US11960451

申请日：2007-12-19

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B1/00 ,  B24D11/00

CPC分类号： B24B37/26

摘要： A polishing pad and a polishing method for polishing a substrate are described. The polishing pad includes a polishing layer and at least two grooves. The grooves form polishing tracks respectively. The polishing tracks collectively construct an even tracking zone. A better polishing uniformity of a substrate surface is achieved with the even tracking zone.

摘要翻译： 对抛光垫和研磨基板的研磨方法进行说明。 抛光垫包括抛光层和至少两个凹槽。 凹槽分别形成抛光轨道。 抛光轨道共同构成均匀的跟踪区域。 利用均匀跟踪区域可以获得更好的抛光均匀性。

公开(公告)号：US08118645B2

公开(公告)日：2012-02-21

申请号：US12351418

申请日：2009-01-09

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B1/00

CPC分类号： B24B37/26 ,  B24B37/042

摘要： A polishing method, a polishing pad, and a polishing system are described. The polishing pad with a plurality of grooves is provided. The width of each groove is W and the pitch between two adjacent grooves is P. An oscillatory movement distance of a workpiece on the polishing pad is set. The oscillatory movement distance enables any particular point on the workpiece to cross the same number of grooves, when a direction between the particular point and the center of the workpiece is perpendicular to a tangential direction of the grooves. The workpiece is then polished with the oscillatory movement distance, so as to achieve a better polishing uniformity for the surface of the workpiece.

摘要翻译： 描述了抛光方法，抛光垫和抛光系统。 提供具有多个凹槽的抛光垫。 每个槽的宽度为W，两个相邻槽之间的间距为P。设置抛光垫上的工件的振荡运动距离。 当特定点与工件的中心之间的方向垂直于凹槽的切线方向时，振荡运动距离使工件上的任何特定点能够穿过相同数量的凹槽。 然后用振荡运动距离抛光工件，从而为工件的表面获得更好的抛光均匀性。

公开(公告)号：US06803310B2

公开(公告)日：2004-10-12

申请号：US10376309

申请日：2003-03-03

申请人： Yu-Piao Wang ,  Chia-Che Chuang

发明人： Yu-Piao Wang ,  Chia-Che Chuang

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76876 ,  H01L2221/1089

摘要： Perform an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on the barrier layer, wherein the atomic layer deposition comprises: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, is transported on the barrier layer; next, perform a purge/vacuum process; then a reactive gas, such as WF6, is transported to form the continuous metal seed layer (CMSL); the cycle step of the atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) about 20 to 40 Å.

摘要翻译： 执行原子层沉积（ALD）至少一次以在阻挡层上形成连续金属种子层（CMSL），其中原子层沉积包括：氢和硅烷如羟基硅烷或四羟基硅烷的混合气体是 在阻隔层上运送; 接下来，执行吹扫/真空过程; 然后将诸如WF6的反应气体输送以形成连续金属种子层（CMSL）; 可以重复原子层沉积（ALD）的循环步骤以形成约20至40的连续金属种子层（CMSL）的厚度。