中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.014 seconds)

    Via-free interconnect structure with self-aligned metal line interconnections
    13.
    发明授权
    Via-free interconnect structure with self-aligned metal line interconnections 有权
    具有自对准金属线互连的无通孔互连结构

    公开(公告)号：US08779592B2

    公开(公告)日：2014-07-15

    申请号：US13461224

    申请日：2012-05-01

    Applicant: Yu-Po Tang ,  Shih-Ming Chang ,  Ken-Hsien Hsieh ,  Ru-Gun Liu

    Inventor： Yu-Po Tang ,  Shih-Ming Chang ,  Ken-Hsien Hsieh ,  Ru-Gun Liu

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/10 ,  H01L29/74

    CPC classification number: H01L21/76838 ,  H01L21/76897 ,  H01L23/522 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first conductive line disposed over a substrate. The first conductive line is located in a first interconnect layer and extends along a first direction. The semiconductor device includes a second conductive line and a third conductive line each extending along a second direction different from the first direction. The second and third conductive lines are located in a second interconnect layer that is different from the first interconnect layer. The second and third conductive lines are separated by a gap that is located over or below the first conductive line. The semiconductor device includes a fourth conductive line electrically coupling the second and third conductive lines together. The fourth conductive line is located in a third interconnect layer that is different from the first interconnect layer and the second interconnect layer.

    Abstract translation: 本发明提供一种半导体器件。 半导体器件包括设置在衬底上的第一导电线。 第一导线位于第一互连层中并沿着第一方向延伸。 半导体器件包括沿着与第一方向不同的第二方向延伸的第二导线和第三导线。 第二和第三导线位于与第一互连层不同的第二互连层中。 第二和第三导线被位于第一导电线之上或之下的间隙分开。 半导体器件包括将第二和第三导线电耦合在一起的第四导线。 第四导线位于与第一互连层和第二互连层不同的第三互连层中。

    Methodology of optical proximity correction optimization
    14.
    发明授权
    Methodology of optical proximity correction optimization 有权
    光学邻近校正优化方法

    公开(公告)号：US08631360B2

    公开(公告)日：2014-01-14

    申请号：US13448977

    申请日：2012-04-17

    Applicant: Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/70

    Abstract: A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.

    Abstract translation: 公开了一种执行OPC和评估OPC解决方案的方法。 一种示例性方法包括接收对应于IC电路掩码的设计数据库。 使用第一组性能指标对设计数据库执行第一光刻模拟和评估。 基于执行第一光刻仿真和评估的结果对设计数据库进行修改。 使用第二组性能指标对设计数据库执行第二次光刻模拟和评估，以验证修改。 如果需要，基于第二光刻模拟和评估的结果再次修改设计数据库。 将修改后的设计数据库提供给掩模制造商以制造与修改的设计数据库相对应的掩模。

    FRACTURE AWARE OPC
    15.
    发明申请
    FRACTURE AWARE OPC 有权

    公开(公告)号：US20140013287A1

    公开(公告)日：2014-01-09

    申请号：US13544014

    申请日：2012-07-09

    Applicant: Nian-Fuh Cheng ,  Yu-Po Tang ,  Chien-Fu Lee ,  Sheng-Wen Lin ,  Yong-Cheng Lin ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Nian-Fuh Cheng ,  Yu-Po Tang ,  Chien-Fu Lee ,  Sheng-Wen Lin ,  Yong-Cheng Lin ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F1/70

    Abstract: The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.

    Abstract translation: 本公开描述了制备用于形成掩模的数据的OPC方法。 该方法包括在主要特征处设置多个解剖点，并且还包括在主要特征处设置目标点。 该方法包括将两个解剖点布置成彼此对称的主要特征。 该方法包括通过掩模写入器的最大分辨率在主要特征的一侧分离两个相邻的解剖点。 该方法包括使用解剖点将主要特征划分成多个段。 该方法包括对目标点执行OPC收敛模拟。 该方法包括校正属于目标点的范围的段，并且还包括校正由两个方位共享的段。

    DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION TO REDUCE CORNER ROUNDING
    17.
    发明申请
    DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION TO REDUCE CORNER ROUNDING 有权
    具有光学近似校正功能以减少角膜圆形的分离

    公开(公告)号：US20130246981A1

    公开(公告)日：2013-09-19

    申请号：US13419977

    申请日：2012-03-14

    Applicant: Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: H01L27/0207 ,  G03F1/36 ,  G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.

    Abstract translation: 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

    Dissection splitting with optical proximity correction to reduce corner rounding
    18.
    发明授权
    Dissection splitting with optical proximity correction to reduce corner rounding 有权
    用光学邻近校正解剖分割以减少圆角

    公开(公告)号：US08527916B1

    公开(公告)日：2013-09-03

    申请号：US13419977

    申请日：2012-03-14

    Applicant: Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    Inventor： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC: G06F17/50

    CPC classification number: H01L27/0207 ,  G03F1/36 ,  G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.

    Abstract translation: 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

Patent Agency Ranking