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    DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION TO REDUCE CORNER ROUNDING
    1.
    发明申请
    DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION TO REDUCE CORNER ROUNDING 有权
    具有光学近似校正功能以减少角膜圆形的分离

    公开(公告)号：US20130246981A1

    公开(公告)日：2013-09-19

    申请号：US13419977

    申请日：2012-03-14

    申请人： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    发明人： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC分类号： G06F17/50

    CPC分类号： H01L27/0207 ,  G03F1/36 ,  G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    摘要： The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.

    摘要翻译： 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

    Dissection splitting with optical proximity correction to reduce corner rounding
    2.
    发明授权
    Dissection splitting with optical proximity correction to reduce corner rounding 有权
    用光学邻近校正解剖分割以减少圆角

    公开(公告)号：US08527916B1

    公开(公告)日：2013-09-03

    申请号：US13419977

    申请日：2012-03-14

    申请人： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    发明人： Chia-Ping Chiang ,  Tsong-Hua Ou ,  Yu-Po Tang ,  Ming-Hui Chih ,  Wen-Li Cheng ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC分类号： G06F17/50

    CPC分类号： H01L27/0207 ,  G03F1/36 ,  G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    摘要： The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.

    摘要翻译： 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

    Methodology of optical proximity correction optimization
    3.
    发明授权
    Methodology of optical proximity correction optimization 有权
    光学邻近校正优化方法

    公开(公告)号：US08631360B2

    公开(公告)日：2014-01-14

    申请号：US13448977

    申请日：2012-04-17

    申请人： Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    发明人： Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/36 ,  G03F1/70

    摘要： A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.

    摘要翻译： 公开了一种执行OPC和评估OPC解决方案的方法。 一种示例性方法包括接收对应于IC电路掩码的设计数据库。 使用第一组性能指标对设计数据库执行第一光刻模拟和评估。 基于执行第一光刻仿真和评估的结果对设计数据库进行修改。 使用第二组性能指标对设计数据库执行第二次光刻模拟和评估，以验证修改。 如果需要，基于第二光刻模拟和评估的结果再次修改设计数据库。 将修改后的设计数据库提供给掩模制造商以制造与修改的设计数据库相对应的掩模。

    NOVEL METHODOLOGY OF OPTICAL PROXIMITY CORRECTION OPTIMIZATION
    6.
    发明申请
    NOVEL METHODOLOGY OF OPTICAL PROXIMITY CORRECTION OPTIMIZATION 有权
    光临近度校正优化的新方法

    公开(公告)号：US20130275926A1

    公开(公告)日：2013-10-17

    申请号：US13448977

    申请日：2012-04-17

    申请人： Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    发明人： Hung-Chun Wang ,  Ming-Hui Chih ,  Yu-Po Tang ,  Chia-Ping Chiang ,  Feng-Ju Chang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/36 ,  G03F1/70

    摘要： A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.

    摘要翻译： 公开了一种执行OPC和评估OPC解决方案的方法。 一种示例性方法包括接收对应于IC电路掩码的设计数据库。 使用第一组性能指标对设计数据库执行第一光刻模拟和评估。 基于执行第一光刻仿真和评估的结果对设计数据库进行修改。 使用第二组性能指标对设计数据库进行第二次光刻模拟和评估，以验证修改。 如果需要，基于第二光刻模拟和评估的结果再次修改设计数据库。 将修改后的设计数据库提供给掩模制造商以制造与修改的设计数据库相对应的掩模。

    METHOD, SYSTEM, AND APPARATUS FOR ADJUSTING LOCAL AND GLOBAL PATTERN DENSITY OF AN INTEGRATED CIRCUIT DESIGN
    7.
    发明申请
    METHOD, SYSTEM, AND APPARATUS FOR ADJUSTING LOCAL AND GLOBAL PATTERN DENSITY OF AN INTEGRATED CIRCUIT DESIGN 有权
    用于调整集成电路设计的局部和全局模式密度的方法，系统和装置

    公开(公告)号：US20110204470A1

    公开(公告)日：2011-08-25

    申请号：US12712665

    申请日：2010-02-25

    申请人： Ying-Chou Cheng ,  Cheng-Lung Tsai ,  Tsong-Hua Ou ,  Cheng Kun Tsai ,  Ru-Gun Liu ,  Wen-Chun Huang

    发明人： Ying-Chou Cheng ,  Cheng-Lung Tsai ,  Tsong-Hua Ou ,  Cheng Kun Tsai ,  Ru-Gun Liu ,  Wen-Chun Huang

    IPC分类号： H01L23/544 ,  G06F17/50

    CPC分类号： G06F17/5068

    摘要： An integrated circuit (IC) design method providing a circuit design layout having a plurality of functional blocks disposed a distance away from each other; identifying a local pattern density to an approximate dummy region, on the circuit design layout, within a predefined distance to one of the functional blocks; performing a local dummy insertion to the approximate dummy region according to the local pattern density; repeating the identifying and performing to at least some other of the functional blocks; and implementing a global dummy insertion to a non-local dummy region according to a global pattern density.

    摘要翻译： 一种提供电路设计布局的集成电路（IC）设计方法，其具有彼此远离设置的多个功能块; 将电路设计布局上的近似虚拟区域的局部图案密度识别在与功能块之一预定义的距离内; 根据局部图案密度对近似虚拟区进行局部虚拟插入; 重复对所述功能块中的至少一些其他功能块的识别和执行; 并且根据全局模式密度对非局部虚拟区域实施全局虚拟插入。