Abstract:
A lithography apparatus having achromatic Fresnel objective (AFO) that combines a Fresnel zone plate and a refractive Fresnel lens. The zone plate provides high resolution for imaging and focusing, while the refractive lens takes advantage of the refraction index change properties of appropriate elements near absorption edges to recombine the electromagnetic radiation of different energies dispersed by the zone plate. This compound lens effectively solves the high chromatic aberration problem of zone plates. The lithography apparatus allows the use of short wavelength radiation in the 1-15 nm spectral range to print high resolution features as small as 20 nm.
Abstract:
In example implementations, a method for producing a thin film coating is provided. The method includes pre-treating a substrate, placing the substrate in a bath comprising at least phosphoric acid and sulphuric acid to produce a thin anodized layer, rinsing the thin anodized layer in a solution, plating a surface of the thin anodized layer in an electro deposition bath following a plating current profile for a predetermined period, and increasing the plating current to the recommended bath plating current to produce the thin film coating having a desired initial coating thickness.
Abstract:
The disclosure provides a method and system for signaling configuration of a Physical Uplink Shared Channel (PUSCH), the system comprises a base station and a target User Equipment (UE). The method comprises: a base station sends Downlink Control Information (DCI) to the target user equipment through a Physical Downlink Control Channel (PUCCH); and the downlink control information includes orthogonal cover code information and/or cyclic shift information for scheduling the physical uplink shared channel in the multi-antenna port transmission and/or single antenna port transmission. It is very adaptable and flexible to use the combination of multiple kinds of information to indicate the orthogonal cover code information in the downlink control information. The UE can obtain the orthogonal cover code information accurately, and the reliability of services can be improved.
Abstract:
A method for treating spheroidal graphite iron includes the step: pouring molten spheroidal graphite iron into a pouring electrical furnace (1); covering the molten spheroidal graphite iron (5) with alkali slag (6) which is melted at high temperature and rich in alkali earth metal ion, rare earth metal ion, or mixture of them; connecting the molten spheroidal graphite iron (5) with the negative pole of the direct current source by one pole (7); connecting the alkali slag (6) with the positive pole of the direct current source by another pole (4), treating the molten spheroidal graphite iron (5) with the alkali slag (6) which is used as electrolyte. The method can prevent the spheroidized fading velocity of the spheroidal graphite iron. The pouring electrical furnace can be used for treating the molten spheroidal graphite iron.
Abstract:
A method for treating spheroidal graphite iron includes the step: pouring molten spheroidal graphite iron into a pouring electrical furnace (1); covering the molten spheroidal graphite iron (5) with alkali slag (6) which is melted at high temperature and rich in alkali earth metal ion, rare earth metal ion, or mixture of them; connecting the molten spheroidal graphite iron (5) with the negative pole of the direct current source by one pole (7); connecting the alkali slag (6) with the positive pole of the direct current source by another pole (4), treating the molten spheroidal graphite iron (5) with the alkali slag (6) which is used as electrolyte. The method can prevent the spheroidized fading velocity of the spheroidal graphite iron. The pouring electrical furnace can be used for treating the molten spheroidal graphite iron.
Abstract:
A method for treating spheroidal graphite iron includes the step: pouring molten spheroidal graphite iron into a pouring electrical furnace (1); covering the molten spheroidal graphite iron (5) with alkali slag (6) which is melted at high temperature and rich in alkali earth metal ion, rare earth metal ion, or mixture of them; connecting the molten spheroidal graphite iron (5) with the negative pole of the direct current source by one pole (7); connecting the alkali slag (6) with the positive pole of the direct current source by another pole (4), treating the molten spheroidal graphite iron (5) with the alkali slag (6) which is used as electrolyte. The method can prevent the spheroidized fading velocity of the spheroidal graphite iron. The pouring electrical furnace can be used for treating the molten spheroidal graphite iron.
Abstract:
The present invention provides a method for transmitting reference signals comprising: during carrier aggregation, a user equipment sending physical uplink shared channel (PUSCH) on one or more component carriers, and sending demodulation reference signals (DM RS) for the PUSCH on each section of bandwidth occupied by the PUSCH on each component carrier, wherein a DM RS sequence on a section of bandwidth is an independent sequence or part of an independent sequence and forms an independent sequence with DM RS sequences on multiple sections of bandwidth other than the section of bandwidth; the section of bandwidth is a section of continuous bandwidth occupied by the PUSCH on any component carrier, or is any of the multiple sections of bandwidth occupied by the PUSCH on any component carrier. The Present invention further provides a corresponding apparatus.
Abstract:
A method for sending uplink scheduling grant signaling and a base station, applied in an Advanced Long Term Evolution (LTE-A) system, the method includes: a base station, according to a number of clusters occupied with non-consecutive resource allocation by a Physical Uplink Shared Channel (PUSCH) of a scheduled user equipment in a component carrier, configuring at least one uplink scheduling grant signaling for the user equipment, wherein each uplink scheduling grant signaling indicates an allocation of resource for one or two clusters occupied by the PUSCH; and the base station allocating a Physical Downlink Control Channel (PDCCH) for each uplink scheduling grant signaling, and sending the uplink scheduling grant signaling to the user equipment. The flexibility of the resource allocation in the case of multiple clusters is enhanced, meanwhile the reliability of transmission of the scheduling grant signaling is ensured.
Abstract:
A system and a method for allocating Sounding Reference Signal (SRS) resources are provided in the present invention, the method includes: an e-Node-B (eNB) allocating a SRS bandwidth with 4n Resource Blocks (RBs) to a terminal, and equally dividing a time domain sequence of a SRS into t portions in the SRS bandwidth; the eNB configuring a time domain RePetition Factor (RPF) used by the UE, and the eNB configuring the UE to use one or more cyclic shifts in L cyclic shifts for each UE; then the eNB notifying the UE of a value of the time domain RPF, a location of a used frequency comb and a used cyclic shift by signaling, wherein n is a positive integer; the RPF satisfies a following condition: 48 × n RPF can be exactly divided by 12; t is an integer by which 48 × n RPF can be exactly divided; and Lg. With the present invention, the number of the SRS resources in a LTE-A system can be efficiently increased.
Abstract:
A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.