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Patent Agency Ranking
公开(公告)号：US11914283B2
公开(公告)日：2024-02-27
申请号：US17658763
申请日：2022-04-11
Applicant: AGC INC.
Inventor： Hiroyoshi Tanabe , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of:
d
M
A
X
-
(
i
×
6
+
1
)
nm
≤
d
≤
d
M
A
X
-
(
i
×
6
-
1
)
nm
where the integer i is 0 or 1, and dMAX is represented by:
d
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
)
+
1
2
π
(
tan
-
1
(
-
k
1
-
n
)
+
0.64
)
}
where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
公开(公告)号：US20250147406A1
公开(公告)日：2025-05-08
申请号：US19013635
申请日：2025-01-08
Applicant: AGC INC.
Inventor： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography, including: a substrate; a conductive film on or above a back surface of the substrate; a reflective layer that reflects EUV light and is on or above a front surface of the substrate; and an absorption layer that absorbs the EUV light and is on or above the reflective layer, where the conductive film has a light transmittance at a wavelength of 1000 nm to 1100 nm of 2.0% or more, a light transmittance at a wavelength of 600 nm to 700 nm of 1.0% or more, and a light transmittance at a wavelength of 400 nm to 500 nm of less than 1.0%.
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公开(公告)号：US12124164B2
公开(公告)日：2024-10-22
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Takuma Kato , Keishi Tsukiyama , Toshiyuki Uno , Hiroshi Hanekawa , Ryusuke Oishi , Sadatatsu Ikeda , Yukihiro Iwata , Chikako Hanzawa
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
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公开(公告)号：US11150550B2
公开(公告)日：2021-10-19
申请号：US16056786
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hiroshi Hanekawa , Tsuyoshi Kakuta , Yoichi Sera , Sadatatsu Ikeda
Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
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公开(公告)号：US10241390B2
公开(公告)日：2019-03-26
申请号：US15424176
申请日：2017-02-03
Applicant: AGC Inc.
Inventor： Hiroshi Hanekawa
IPC: G03F1/24 , H01L21/033
Abstract: To provide a reflective mask blank having pseudo defects significantly excluded. The reflective mask blank comprises a substrate, a reflective layer for reflecting EUV light, formed on the substrate, and an absorber layer for absorbing EUV light, formed on the reflective layer, wherein Ssk
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