-
公开(公告)号：US11914283B2
公开(公告)日：2024-02-27
申请号：US17658763
申请日：2022-04-11
Applicant: AGC INC.
Inventor： Hiroyoshi Tanabe , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of:
d
M
A
X
-
(
i
×
6
+
1
)
nm
≤
d
≤
d
M
A
X
-
(
i
×
6
-
1
)
nm
where the integer i is 0 or 1, and dMAX is represented by:
d
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
)
+
1
2
π
(
tan
-
1
(
-
k
1
-
n
)
+
0.64
)
}
where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
12.发明公开公开(公告)号：US20240045319A1
公开(公告)日：2024-02-08
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sakaki
IPC: G03F1/24 , H01L21/033 , G03F1/32
CPC classification number: G03F1/24 , H01L21/0337 , H01L21/0332 , G03F1/32
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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