公开(公告)号：US20240241433A1

公开(公告)日：2024-07-18

申请号：US18621502

申请日：2024-03-29

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20240201576A1

公开(公告)日：2024-06-20

申请号：US18592084

申请日：2024-02-29

Applicant: AGC Inc.

Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO ,  Masafumi AKITA

IPC: G03F1/24 ,  G03F1/52 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F1/24 ,  G03F1/52 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337

Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

公开(公告)号：US20220236636A1

公开(公告)日：2022-07-28

申请号：US17658763

申请日：2022-04-11

Applicant: AGC INC.

Inventor： Hiroyoshi TANABE ,  Hiroshi HANEKAWA ,  Toshiyuki UNO

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/52

Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M ⁢ A ⁢ X - ( i × 6 + 1 ) ⁢ nm ≤ d ≤ d M ⁢ A ⁢ X - ( i × 6 - 1 ) ⁢ nm where the integer i is 0 or 1, and dMAX is represented by: d M ⁢ A ⁢ X ( nm ) = 1 ⁢ 3 . 5 ⁢ 3 2 ⁢ n ⁢ cos ⁢ 6 ⁢ ° ⁢ { INT ⁡ ( 0 . 5 ⁢ 8 1 - n ) + 1 2 ⁢ π ⁢ ( tan - 1 ( - k 1 - n ) + 0 . 6 ⁢ 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.

公开(公告)号：US20220075256A1

公开(公告)日：2022-03-10

申请号：US17529124

申请日：2021-11-17

Applicant: AGC Inc.

Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO ,  Masafumi AKITA

IPC: G03F1/24 ,  G03F1/52 ,  H01L21/027 ,  H01L21/033

Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

公开(公告)号：US20220035234A1

公开(公告)日：2022-02-03

申请号：US17382755

申请日：2021-07-22

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hirotomo KAWAHARA ,  Toshiyuki UNO ,  Ichiro ISHIKAWA ,  Kenichi SASAKI

IPC: G03F1/24 ,  G03F1/32 ,  H01L21/033

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.