公开(公告)号：US09612470B2

公开(公告)日：2017-04-04

申请号：US14473342

申请日：2014-08-29

Applicant: Apple Inc.

Inventor： Sang Un Choi ,  Zhibing Ge ,  Shang-Chih Lin ,  Hiroshi Osawa ,  Ton-Yong Wang ,  Ming Xu

IPC: G02F1/13 ,  G02F1/1335 ,  G02F1/1339 ,  G02B5/20

CPC classification number: G02F1/133514 ,  G02B5/201 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/13394 ,  G02F2001/133519 ,  G02F2001/13398

Abstract: A display may have a layer of liquid crystal material between a color filter layer and a thin-film transistor layer. Column spacer structures may be formed between the color filter layer and the thin-film transistor layer to maintain a desired separation between the color filter and thin-film transistor layers. Column spacers may be deposited in column spacer regions of the color filter layer. The color filter layer may include rows of red, green, and blue color filter elements. Blue color filter material that forms blue color filter elements in the color filter layer may also be used to form a planar surface over red and green color filter elements in the column spacer regions. Using the blue color filter material to planarize the surface on which column spacers are formed ensures that the column spacers provide sufficient support for the display without requiring an additional planarization layer.

公开(公告)号：US20160380112A9

公开(公告)日：2016-12-29

申请号：US13801261

申请日：2013-03-13

Applicant: APPLE INC.

Inventor： Cheng-Ho Yu ,  Young Bae Park ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Shang-Chih Lin

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78651 ,  H01L27/1288 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78645

Abstract: A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.

Abstract translation: 提供了一种制造用于具有像素阵列的LCD的薄膜晶体管（TFT）的方法。 该方法包括在TFT堆叠的一部分上沉积第一光致抗蚀剂层。 TFT堆叠包括导电栅极层和半导体层。 该方法还包括以第一掺杂剂量掺杂暴露的半导体层。 该方法还包括蚀刻导电栅极层的一部分以暴露半导体层的一部分，并以第二掺杂剂量掺杂半导体层的暴露部分。 该方法还包括去除第一光致抗蚀剂层，以及在像素的有源区域中在掺杂半导体层的第一部分上沉积第二光致抗蚀剂层，以在围绕有源区域的区域中暴露掺杂半导体层的第二部分。 该方法还包括以第三掺杂剂量掺杂掺杂半导体层的第二部分，第一剂量高于第二剂量和第三剂量。

公开(公告)号：US09829740B2

公开(公告)日：2017-11-28

申请号：US14339263

申请日：2014-07-23

Applicant: Apple Inc.

Inventor： Shang-Chih Lin ,  Yuan Chen ,  Zhibing Ge

IPC: G02F1/1333 ,  G02F1/1335

CPC classification number: G02F1/133514 ,  G02F1/133512 ,  G02F1/133516

Abstract: A display may have a thin-film transistor layer formed from a layer of thin-film transistor circuitry on a substrate, a color filter layer, and a layer of liquid crystal material interposed between the thin-film transistor layer and the color filter layer. The thin-film transistor layer, the liquid crystal layer, and the color filter layer may be sandwiched between upper and lower polarizers. A backlight unit may supply backlight illumination for pixels in the display. The color filter layer may have a black matrix with an array of openings. Color filter elements of different colors may be formed in the openings. The black matrix may have sidewalls that are steep or that are undercut. The profile of the black matrix helps block improperly colored off-axis light and thereby reduces undesired color mixing in the display.

公开(公告)号：US09564478B2

公开(公告)日：2017-02-07

申请号：US14228070

申请日：2014-03-27

Applicant: Apple Inc.

Inventor： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Abbas Jamshidi Roudbari ,  Shang-Chih Lin ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

IPC: G02F1/136 ,  G02F1/1345 ,  H01L27/32 ,  H01L27/12 ,  G09G3/36 ,  G02F1/1368 ,  G09G3/32 ,  G02F1/1362

CPC classification number: H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

公开(公告)号：US20160026037A1

公开(公告)日：2016-01-28

申请号：US14339263

申请日：2014-07-23

Applicant: Apple Inc.

Inventor： Shang-Chih Lin ,  Yuan Chen ,  Zhibing Ge

IPC: G02F1/1335 ,  G02F1/1368

CPC classification number: G02F1/133514 ,  G02F1/133512 ,  G02F1/133516

Abstract: A display may have a thin-film transistor layer formed from a layer of thin-film transistor circuitry on a substrate, a color filter layer, and a layer of liquid crystal material interposed between the thin-film transistor layer and the color filter layer. The thin-film transistor layer, the liquid crystal layer, and the color filter layer may be sandwiched between upper and lower polarizers. A backlight unit may supply backlight illumination for pixels in the display. The color filter layer may have a black matrix with an array of openings. Color filter elements of different colors may be formed in the openings. The black matrix may have sidewalls that are steep or that are undercut. The profile of the black matrix helps block improperly colored off-axis light and thereby reduces undesired color mixing in the display.

Abstract translation: 显示器可以具有薄膜晶体管层，该薄膜晶体管层由介于薄膜晶体管层和滤色器层之间的衬底，滤色器层和液晶材料层上的薄膜晶体管电路层形成。 薄膜晶体管层，液晶层和滤色器层可夹在上下偏振器之间。 背光单元可以为显示器中的像素提供背光照明。 滤色器层可以具有带有开口阵列的黑色矩阵。 可以在开口中形成不同颜色的滤色器元件。 黑色矩阵可以具有陡峭或被切削的侧壁。 黑色矩阵的轮廓有助于阻挡不正确地着色的离轴光，从而减少显示器中的不期望的颜色混合。

公开(公告)号：US09685557B2

公开(公告)日：2017-06-20

申请号：US13801261

申请日：2013-03-13

Applicant: APPLE INC.

Inventor： Cheng-Ho Yu ,  Young Bae Park ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Shang-Chih Lin

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78651 ,  H01L27/1288 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78645

Abstract: A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.

公开(公告)号：US09599865B2

公开(公告)日：2017-03-21

申请号：US14702556

申请日：2015-05-01

Applicant: Apple Inc.

Inventor： Zhibing Ge ,  Chaohao Wang ,  Cheng Chen ,  Kyung Wook Kim ,  Ming-Chin Hung ,  Paolo Sacchetto ,  Shih Chang Chang ,  Shih-Chyuan Fan Jiang ,  Shang-Chih Lin

IPC: G06F3/041 ,  G02F1/1343 ,  G06F3/147 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1333

CPC classification number: G02F1/134309 ,  G02F1/133514 ,  G02F1/1343 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/134372 ,  G06F3/147

Abstract: A display may have upper and lower display layers. A layer of liquid crystal material may be interposed between the upper and lower display layers. The display layers may have substrates. A thin-film transistor layer may have a layer of thin-film transistor structures on a substrate such as a clear glass layer. A planarization layer may be formed on the thin-film transistor structures. A transparent conductive layer may be formed on the planarization layer. The display may have a dielectric layer on the transparent conductive layer. Pixels may be formed in the display layers. The pixels may include pixel electrodes having fingers. The fingers may be formed on the dielectric layer. Trenches in the dielectric layer may be formed between the fingers. The trenches may extend to the transparent conductive layer or may be formed only partway into the dielectric layer.

公开(公告)号：US09530801B2

公开(公告)日：2016-12-27

申请号：US14153954

申请日：2014-01-13

Applicant: Apple Inc.

Inventor： Daisuke Nozu ,  Hirokazu Yamagata ,  Hiroshi Osawa ,  Shang-Chih Lin ,  Shih-Chang Chang ,  Yu-Cheng Chen

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/136

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133502 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13606 ,  G02F2001/13685 ,  G02F2201/40 ,  G02F2202/42 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors formed on top of a glass substrate. A passivation layer may be formed on the thin-film transistor layers. A first low-k dielectric layer may be formed on the passivation layer. Data line routing structures may be formed on the first low-k dielectric layer. A second low-k dielectric layer may be formed on the first low-k dielectric layer. A common voltage electrode and associated storage capacitance may be formed on the second low-k dielectric layer. The first and second low-k dielectric layers may be formed from material having substantially similar refractive indices to maximize backlight transmittance and may have appropriate thicknesses so as to minimize parasitic capacitive loading.

Abstract translation: 显示器可以具有滤色器层和薄膜晶体管层。 液晶材料层可以位于滤色器层和薄膜晶体管（TFT）层之间。 TFT层可以包括形成在玻璃基板的顶部的薄膜晶体管。 钝化层可以形成在薄膜晶体管层上。 可以在钝化层上形成第一低k电介质层。 数据线路由结构可以形成在第一低k电介质层上。 可以在第一低k电介质层上形成第二低k电介质层。 公共电压电极和相关联的存储电容可以形成在第二低k电介质层上。 第一和第二低k电介质层可以由具有基本上相似的折射率的材料形成，以使背光透射率最大化并且可以具有适当的厚度，以便使寄生电容负载最小化。

公开(公告)号：US20160209711A1

公开(公告)日：2016-07-21

申请号：US14702556

申请日：2015-05-01

Applicant: Apple Inc.

Inventor： Zhibing Ge ,  Chaohao Wang ,  Cheng Chen ,  Kyung Wook Kim ,  Ming-Chin Hung ,  Paolo Sacchetto ,  Shih Chang Chang ,  Shih-Chyuan Fan Jiang ,  Shang-Chih Lin

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  G06F3/147

CPC classification number: G02F1/134309 ,  G02F1/133514 ,  G02F1/1343 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/134372 ,  G06F3/147

Abstract: A display may have upper and lower display layers. A layer of liquid crystal material may be interposed between the upper and lower display layers. The display layers may have substrates. A thin-film transistor layer may have a layer of thin-film transistor structures on a substrate such as a clear glass layer. A planarization layer may be formed on the thin-film transistor structures. A transparent conductive layer may be formed on the planarization layer The display may have a dielectric layer on the transparent conductive layer. Pixels may be formed in the display layers. The pixels may include pixel electrodes having fingers. The fingers may be formed on the dielectric layer. Trenches in the dielectric layer may be formed between the fingers. The trenches may extend to the transparent conductive layer or may be formed only partway into the dielectric layer.

Abstract translation: 显示器可以具有上和下显示层。 可以在上显示层和下显示层之间插入一层液晶材料。 显示层可以具有基底。 薄膜晶体管层可以在诸如透明玻璃层的基板上具有薄膜晶体管结构层。 平坦化层可以形成在薄膜晶体管结构上。 透明导电层可以形成在平坦化层上。显示器可以在透明导电层上具有介电层。 可以在显示层中形成像素。 像素可以包括具有指状物的像素电极。 指状物可以形成在电介质层上。 电介质层中的沟槽可以形成在手指之间。 沟槽可以延伸到透明导电层，或者可以仅形成在介电层的中间部分。

公开(公告)号：US20150200207A1

公开(公告)日：2015-07-16

申请号：US14153954

申请日：2014-01-13

Applicant: Apple Inc.

Inventor： Daisuke Nozu ,  Hirokazu Yamagata ,  Hiroshi Osawa ,  Shang-Chih Lin ,  Shih-Chang Chang ,  Yu-Cheng Chen

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133502 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13606 ,  G02F2001/13685 ,  G02F2201/40 ,  G02F2202/42 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors formed on top of a glass substrate. A passivation layer may be formed on the thin-film transistor layers. A first low-k dielectric layer may be formed on the passivation layer. Data line routing structures may be formed on the first low-k dielectric layer. A second low-k dielectric layer may be formed on the first low-k dielectric layer. A common voltage electrode and associated storage capacitance may be formed on the second low-k dielectric layer. The first and second low-k dielectric, layers may be formed from material having substantially similar refractive indices to maximize backlight transmittance and may have appropriate thicknesses so as to minimize parasitic capacitive loading.

Abstract translation: 显示器可以具有滤色器层和薄膜晶体管层。 液晶材料层可以位于滤色器层和薄膜晶体管（TFT）层之间。 TFT层可以包括形成在玻璃基板的顶部的薄膜晶体管。 钝化层可以形成在薄膜晶体管层上。 可以在钝化层上形成第一低k电介质层。 数据线路由结构可以形成在第一低k电介质层上。 可以在第一低k电介质层上形成第二低k电介质层。 公共电压电极和相关联的存储电容可以形成在第二低k电介质层上。 第一和第二低k电介质层可以由具有基本上相似的折射率的材料形成，以使背光透射率最大化，并且可以具有适当的厚度，以使寄生电容负载最小化。