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11.
公开(公告)号:US11373882B2
公开(公告)日:2022-06-28
申请号:US17006361
申请日:2020-08-28
Applicant: Applied Materials, Inc.
Inventor: Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC: C04B35/486 , C04B35/505 , H01L21/67
Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
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公开(公告)号:US11053581B2
公开(公告)日:2021-07-06
申请号:US16685341
申请日:2019-11-15
Applicant: Applied Materials, Inc.
Inventor: Jennifer Y. Sun , Biraja P. Kanungo , Vahid Firouzdor , Tom Cho
Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Er2O3, Er3Al5O12, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.
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公开(公告)号:US11014853B2
公开(公告)日:2021-05-25
申请号:US16279247
申请日:2019-02-19
Applicant: Applied Materials, Inc.
Inventor: Jennifer Y. Sun , David Fenwick
IPC: H01J37/32 , C04B35/505 , C04B35/638 , C04B35/622 , H01L21/67 , H01L21/683 , C04B35/645 , H01L21/687 , C23C30/00 , C04B41/00
Abstract: A chamber component for a processing chamber comprises a ceramic body consisting of a sintered ceramic material consisting essentially of one or more phase of Y2O3—ZrO2. The ceramic material consists essentially of 55-65 mol % Y2O3 and 35-45 mol % ZrO2.
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公开(公告)号:US11008653B2
公开(公告)日:2021-05-18
申请号:US15844335
申请日:2017-12-15
Applicant: Applied Materials, Inc.
Inventor: David Fenwick , Xiaowei Wu , Jennifer Y. Sun
Abstract: A multi-layer coating for a surface of an article comprises a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiNx, TaNx, Zr3N4, and TiZrxNy. The erosion resistant layer may be a rare oxide film comprising YZrxOy. The diffusion barrier layer and the erosion resistant layer may be deposited on the article's surface using a thin film deposition technique including but not limited to, ALD, PVD, and CVD.
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公开(公告)号:US20210123143A1
公开(公告)日:2021-04-29
申请号:US17072301
申请日:2020-10-16
Applicant: APPLIED MATERIALS, INC.
Inventor: David Fenwick , Jennifer Y. Sun , Cheng-Hsuan Chou , Xiao-Ming He
IPC: C23F11/02 , C23C16/40 , C23C16/505 , C23C16/455 , C23F11/18
Abstract: Embodiments of the present disclosure relate to articles, coated articles, and methods of coating such articles with a corrosion resistant coating. The corrosion resistant coating can comprise hafnium aluminum oxide. The corrosion resistant coating may be deposited by a non-line of sight deposition, such as atomic layer deposition. Articles that may be coated may include chamber components, such as gas lines.
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公开(公告)号:US20200181771A1
公开(公告)日:2020-06-11
申请号:US16211335
申请日:2018-12-06
Applicant: Applied Materials, Inc.
Inventor: Xiaowei Wu , Jennifer Y. Sun , Michael R. Rice
IPC: C23C16/40 , C23C16/455
Abstract: Certain embodiments of the present disclosure relate to coated articles and methods of coating articles. In one embodiment, a coated article comprises an article adapted for use in a processing chamber, and a coating formed on exterior and interior surfaces of the article. In one embodiment, the coating comprises a rare earth metal-containing ceramic, and the coating is substantially uniform, conformal, and porosity-free.
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公开(公告)号:US10443126B1
公开(公告)日:2019-10-15
申请号:US15947402
申请日:2018-04-06
Applicant: Applied Materials, Inc.
Inventor: Xiaowei Wu , Jennifer Y. Sun , Michael R. Rice
IPC: C23C16/455 , C23C16/40 , C23C14/08 , H01L21/67 , H01L21/02
Abstract: Disclosed herein is a rare-earth oxide coating on a surface of an article with one or more interruption layers to control crystal growth and methods of its formation. The coating may be deposited by atomic layer deposition and/or by chemical vapor deposition. The rare-earth oxides in the coatings disclosed herein may have an atomic crystalline phase that is different from the atomic crystalline phase or the amorphous phase of the one or more interruption layers.
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公开(公告)号:US20190263722A1
公开(公告)日:2019-08-29
申请号:US16405783
申请日:2019-05-07
Applicant: Applied Materials, Inc
Inventor: Jennifer Y. Sun , Biraja P. Kanungo
IPC: C04B35/50 , H01L21/67 , C04B35/622 , C23C16/50 , C23C14/22 , C04B35/626 , C04B37/00 , C04B37/02 , C23C16/40 , H01L21/683 , C04B35/505 , H01J37/32 , C23C16/44 , H01L21/687 , C23C16/455 , C23C4/11 , C23C4/134
Abstract: An article comprises a plasma resistant ceramic material comprising Y2O3 at a concentration of approximately 30 molar % to approximately 60 molar %, Er2O3 at a concentration of above 30 molar % to approximately 60 molar %, and at least one of ZrO2, Gd2O3 or SiO2 at a concentration of over 0 molar % to approximately 30 molar %.
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19.
公开(公告)号:US20190157114A1
公开(公告)日:2019-05-23
申请号:US16252372
申请日:2019-01-18
Applicant: Applied Materials, Inc.
Inventor: Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC: H01L21/67 , C04B35/505 , C04B35/486
Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
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20.
公开(公告)号:US20180188748A1
公开(公告)日:2018-07-05
申请号:US15396619
申请日:2016-12-31
Applicant: Applied Materials, Inc.
Inventor: Ming Xu , Sushant S. Koshti , Michael R. Rice , Steven E. Babayan , Jennifer Y. Sun
IPC: G05D7/06 , G01F1/696 , C23C16/455 , C23C16/40
Abstract: An electronic device manufacturing system includes a mass flow controller (MFC) that has a thermal flow sensor. The thermal flow sensor may measure a mass flow rate and may include a sensor tube having an inner surface coated with a material to form an inner barrier layer. The inner barrier layer may prevent or substantially reduce the likelihood of a corrosive reaction from occurring on the inner surface, which may prevent or reduce the likelihood of the MFC drifting beyond the MFC's mass flow rate accuracy specifications. This may improve the repeatability of flow detection by the MFC. Methods of measuring and controlling a mass flow rate in an electronic device manufacturing system are also provided, as are other aspects.
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