公开(公告)号：US07598178B2

公开(公告)日：2009-10-06

申请号：US11690588

申请日：2007-03-23

申请人： Arkadii V. Samoilov ,  Rohini Kodali ,  Ali Zojaji ,  Yihwan Kim

发明人： Arkadii V. Samoilov ,  Rohini Kodali ,  Ali Zojaji ,  Yihwan Kim

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L21/32134 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66272 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/732 ,  H01L29/7834

摘要： The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.

摘要翻译： 本发明提供了在衬底上形成外延膜的系统和方法。 在处理室中加热后，将衬底暴露于硅源和SiH2（CH3）2，SiH（CH3）3，Si（CH3）4,1,3-二硅烷和C2H2中的至少一种，温度 大于约250摄氏度，压力大于约1托，以便在至少一部分基底上形成外延膜。 然后，将衬底暴露于蚀刻剂，以蚀刻外延膜和沉积期间形成的任何其它膜。 可以重复沉积和蚀刻，直到达到所需厚度的膜。 公开了许多其他方面。

公开(公告)号：US07312128B2

公开(公告)日：2007-12-25

申请号：US11001774

申请日：2004-12-01

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： H01L21/336

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

摘要翻译： 在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。 衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。 将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。 沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。 此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多​​晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。 该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

公开(公告)号：US07572715B2

公开(公告)日：2009-08-11

申请号：US11745416

申请日：2007-05-07

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

摘要翻译： 在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。 衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。 将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。 沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。 此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多​​晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。 该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

公开(公告)号：US07166528B2

公开(公告)日：2007-01-23

申请号：US10683937

申请日：2003-10-10

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： H01L21/44 ,  H01L21/336

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

公开(公告)号：US07674337B2

公开(公告)日：2010-03-09

申请号：US11697516

申请日：2007-04-06

申请人： David Ishikawa ,  Craig R. Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii V. Samoilov

发明人： David Ishikawa ,  Craig R. Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： C23C16/00 ,  C30B11/00

CPC分类号： C30B35/00 ,  C23C16/45561 ,  C30B25/14 ,  Y10T117/10

摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

摘要翻译： 本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。 公开了许多其他方面。

公开(公告)号：US07837790B2

公开(公告)日：2010-11-23

申请号：US11566031

申请日：2006-12-01

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： C30B29/38

CPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10T117/1004

摘要： Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.

摘要翻译： 公开了用于形成和处理含有硅和碳的外延层的方法和装置。 外延层的处理将间隙碳转化为替代碳。 具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 在具体实施方案中，外延层的处理包括在短时间内进行退火，例如通过激光退火，毫秒退火，快速热退火和含氮环境的尖峰退火。

公开(公告)号：US07521365B2

公开(公告)日：2009-04-21

申请号：US11421156

申请日：2006-05-31

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： H01L21/302

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

公开(公告)号：US07517775B2

公开(公告)日：2009-04-14

申请号：US11420906

申请日：2006-05-30

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

公开(公告)号：US20070082451A1

公开(公告)日：2007-04-12

申请号：US11539775

申请日：2006-10-09

申请人： ARKADII SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas Dalida

发明人： ARKADII SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas Dalida

IPC分类号： H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7848

摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

公开(公告)号：US07732269B2

公开(公告)日：2010-06-08

申请号：US11742932

申请日：2007-05-01

申请人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

发明人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.

摘要翻译： 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。