摘要:
The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.
摘要:
A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium and comprising the following steps: synthesizing a first nonpolar block in the form of a macro-initiator, preparing a solution of said macro-initiator previously synthesized by mixing it with an alkali metal alcoholate in an aprotic nonpolar solvent, preparing a solution of a polar monomer in an aprotic nonpolar solvent, injecting the two solutions previously prepared of macro-initiator and of polar monomer into a micro-mixer, connected to a polymerization reactor, at a constant flow ratio, recovering the copolymer obtained.
摘要:
Provided is a process for reducing the structuring time of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product χeffective*N of between 10.5 and 40 at the structuring temperature, where χeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.
摘要:
Provided is a process for reducing the number of defects of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.
摘要:
Provided is a process for improving the critical dimension uniformity of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.
摘要:
Provided is a process for forming an ordered film of a block copolymer on a surface. The process includes curing, on a surface, a composition comprising at least one block copolymer at a structuring temperature between the highest Tg of the at least one block copolymer and the decomposition temperature of the at least one block copolymer to form an ordered film comprising the at least one block copolymer on the substrate. The composition has a product χ effective*N of between 10.5 and 40 at the structuring temperature, where χ effective is the Flory-Huggins parameter of the block copolymer and N is the total degree of polymerization of the blocks of the block copolymer. The ordered film has a thickness greater than 20 nm and a period greater than 10 nm.
摘要:
The present invention relates to a process for obtaining high-period (typically >10 nm), thick (typically >20 nm) ordered films on a nanometric scale comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these thick ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.
摘要:
The invention relates to a process for controlling the surface energy of a substrate in order to make it possible to obtain a specific orientation of the nanodomains of a film of block copolymer subsequently deposited on the said surface, the said process being characterized in that it comprises the following stages: preparing a blend of copolymers, each copolymer comprising at least one functional group which allows it to be grafted to or crosslinked on the surface of the said substrate, depositing the said blend thus prepared on the surface of the said substrate, carrying out a treatment which results in the grafting to the surface of the substrate or the crosslinking on the surface of the substrate of each of the copolymers of the blend.