摘要:
The invention relates to a process for reducing the defectivity of a block copolymer (BCP1) film, the lower surface of which is in contact with a preneutralized surface (N) of a substrate (S) and the upper surface of which is covered by an upper surface neutralization layer (TC) in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, where the upper surface neutralization layer (TC) employed to cover the upper surface of the block copolymer (BCP1) film comprises a second block copolymer (BCP2).
摘要:
The present invention relates to a process for controlling the critical dimension uniformity of ordered films of block copolymers on a nanometric scale. The invention also relates to the compositions used for controlling the critical dimension uniformity of ordered films of block copolymers and to the resulting ordered films that can be used in particular as masks in the lithography field.
摘要:
The invention relates to a process for controlling the surface energy at the upper interface of a block copolymer (BCP1), the lower interface of which is in contact with a preneutralized surface of a substrate, in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, the said process consisting in covering the upper surface of the block copolymer (BCP1) with an upper surface neutralization layer (TC) and being characterized in that the said upper surface neutralization layer (TC) comprises a second block copolymer (BCP2).
摘要:
The present invention relates to a method for controlling the level of defects in films obtained using a composition comprising a blend of block copolymers and polymers deposited on a surface. The polymers comprise at least one monomer identical to those present in one or other block of the block copolymers.
摘要:
The invention relates to a block copolymer film nanostructured into nanodomains, obtained from a base block copolymer having a molecular weight of greater than 50 kg/mol, and preferably greater than 100 kg/mol and less than 250 kg/mol, and at least one block of which comprises styrene, and at least one other block of which comprises methyl methacrylate. This film is characterized in that the styrene-based block is formed by a copolymer of styrene and diphenylethylene (DPE).
摘要:
The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase.
摘要:
The present invention relates to a process for controlling the period characterizing the morphology obtained from a blend of block copolymers and of (co)polymers of one of the blocks on a surface employing a particular way of carrying out the synthesis of the blend of block copolymers and of (co)polymers of one of the blocks.
摘要:
The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.
摘要:
The invention relates to a process for producing a film of self-assembled block copolymers on a substrate, said process consisting in carrying out a simultaneous deposition of block copolymer and of random copolymer by means of a solution containing a blend of block copolymer and of random copolymer of different chemical nature and which are immiscible, then in carrying out an annealing treatment allowing the promotion of the phase segregation inherent in the self-assembly of block copolymers.
摘要:
A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium and comprising the following steps: synthesizing a first nonpolar block in the form of a macro-initiator, preparing a solution of said macro-initiator previously synthesized by mixing it with an alkali metal alcoholate in an aprotic nonpolar solvent, preparing a solution of a polar monomer in an aprotic nonpolar solvent, injecting the two solutions previously prepared of macro-initiator and of polar monomer into a micro-mixer, connected to a polymerization reactor, at a constant flow ratio, recovering the copolymer obtained.