公开(公告)号：US10734223B2

公开(公告)日：2020-08-04

申请号：US16417938

申请日：2019-05-21

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L29/786 ,  H01L29/24 ,  C23C16/30 ,  H01L29/74 ,  H01L29/778 ,  H01L29/66 ,  C23C16/52

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US10731249B2

公开(公告)日：2020-08-04

申请号：US15897578

申请日：2018-02-15

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L23/532 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US20190272993A1

公开(公告)日：2019-09-05

申请号：US16417938

申请日：2019-05-21

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  C23C16/30 ,  H01L29/24 ,  C23C16/56 ,  C23C16/455 ,  H01L29/786

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US09828674B2

公开(公告)日：2017-11-28

申请号：US15096511

申请日：2016-04-12

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/302 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US09394609B2

公开(公告)日：2016-07-19

申请号：US14621218

申请日：2015-02-12

Applicant: ASM IP HOLDING B.V.

Inventor： Miia Mäntymäki ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/22 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/30 ,  C23C16/45527

Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.

Abstract translation: 提供了通过使用两种不同的金属卤化物反应物的气相沉积来沉积薄膜的方法。 在一些实施例中，通过原子层沉积方法沉积氟化铝薄膜，其中基底与包含诸如AlCl 3的铝的第一金属卤化物反应物和包含氟的第二金属卤化物反应物如TiF 4交替并顺序地接触。

公开(公告)号：US12119220B2

公开(公告)日：2024-10-15

申请号：US18079160

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02203 ,  H01L21/02227 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02205

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

公开(公告)号：US11952658B2

公开(公告)日：2024-04-09

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/08 ,  C23C16/45531 ,  C23C16/45546 ,  C23C16/45553

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20230170207A1

公开(公告)日：2023-06-01

申请号：US18079160

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02203 ,  H01L21/76224 ,  H01L21/0228 ,  H01L21/02227 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/02178

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

公开(公告)号：US11643728B2

公开(公告)日：2023-05-09

申请号：US17303806

申请日：2021-06-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23F1/12 ,  C23C16/56 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/465

CPC classification number: C23C16/56 ,  C23C16/305 ,  C23C16/45534 ,  C23F1/12 ,  H01L21/0262 ,  H01L21/02568 ,  H01L21/465

Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

公开(公告)号：US20230067660A1

公开(公告)日：2023-03-02

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/08 ,  C23C16/455

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.