公开(公告)号：US20180350620A1

公开(公告)日：2018-12-06

申请号：US15987755

申请日：2018-05-23

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US09793135B1

公开(公告)日：2017-10-17

申请号：US15210256

申请日：2016-07-14

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Hiroki Kondo ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US20160093485A1

公开(公告)日：2016-03-31

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。

公开(公告)号：US08785215B2

公开(公告)日：2014-07-22

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/00 ,  H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。