公开(公告)号：US20210287912A1

公开(公告)日：2021-09-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20180286663A1

公开(公告)日：2018-10-04

申请号：US15472750

申请日：2017-03-29

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Akiko Kobayashi ,  Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337

Abstract: A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

公开(公告)号：US11961741B2

公开(公告)日：2024-04-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US09478414B2

公开(公告)日：2016-10-25

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。

公开(公告)号：US20240128090A1

公开(公告)日：2024-04-18

申请号：US18530759

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20190148224A1

公开(公告)日：2019-05-16

申请号：US15815483

申请日：2017-11-16

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Akiko Kobayashi ,  Dai Ishikawa

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

公开(公告)号：US20130337583A1

公开(公告)日：2013-12-19

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。

公开(公告)号：US10910262B2

公开(公告)日：2021-02-02

申请号：US15815483

申请日：2017-11-16

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Akiko Kobayashi ,  Dai Ishikawa

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

公开(公告)号：US20220375744A1

公开(公告)日：2022-11-24

申请号：US17747197

申请日：2022-05-18

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/40

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

公开(公告)号：US10283353B2

公开(公告)日：2019-05-07

申请号：US15472750

申请日：2017-03-29

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Akiko Kobayashi ,  Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/033

Abstract: A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.