公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20240318311A1

公开(公告)日：2024-09-26

申请号：US18610654

申请日：2024-03-20

Applicant: ASM IP Holding B.V.

Inventor： Agung Setiadi ,  Hiroki Matsuda ,  Jun Kawahara

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/515 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45542 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/515 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32816 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01J2237/332

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen under conditions that reduce incubation time for depositing the silicon nitride.

公开(公告)号：US11421321B2

公开(公告)日：2022-08-23

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US10204790B2

公开(公告)日：2019-02-12

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/768

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.