公开(公告)号：US20240043997A1

公开(公告)日：2024-02-08

申请号：US18378403

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  Hak-Yong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US11866823B2

公开(公告)日：2024-01-09

申请号：US17967035

申请日：2022-10-17

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/673 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/458 ,  C23C16/45536 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32211 ,  H01L21/673 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6875 ,  H01L21/68735

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US20230052239A1

公开(公告)日：2023-02-16

申请号：US17967035

申请日：2022-10-17

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US20210180188A1

公开(公告)日：2021-06-17

申请号：US17120063

申请日：2020-12-11

Applicant: ASM IP Holding B.V.

Inventor： DaeYoun Kim ,  JaeHyun Kim ,  SeungHwan Lee

IPC: C23C16/458 ,  C23C16/455

Abstract: A substrate processing apparatus capable of selective processing a thin film in a bevel edge includes: a substrate support plate including a recess and at least one path formed in the recess; and a gas supply unit on the substrate support plate, wherein a first distance between a portion of the substrate support plate inside the recess and the gas supply unit is less than a second distance between the gas supply unit and the other portion of the substrate support plate outside the recess.

公开(公告)号：US20210166910A1

公开(公告)日：2021-06-03

申请号：US17103904

申请日：2020-11-24

Applicant: ASM IP Holding B.V.

Inventor： DaeYoun Kim ,  JaeHyun Kim ,  SeungHwan Lee

IPC: H01J37/20 ,  H01J37/32 ,  H01L21/311

Abstract: A substrate processing apparatus capable of selective processing a thin film in a bevel region thereof includes a substrate support plate for supporting a substrate to be processed, the substrate support plate including: an inner portion having an upper surface having an area less than that of the substrate to be processed; and a peripheral portion surrounding the inner portion, wherein an upper surface of the peripheral portion is below the upper surface of the inner portion.