公开(公告)号：US11676812B2

公开(公告)日：2023-06-13

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111 ,  H01J2237/3347

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20230110980A1

公开(公告)日：2023-04-13

申请号：US17962859

申请日：2022-10-10

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  KyungEun Lee ,  HakJoon Lee ,  YoonKi Min ,  HaRim Kim ,  DongHyun Ko ,  Seongil Cho

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/505

Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US20210090878A1

公开(公告)日：2021-03-25

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

公开(公告)号：US20190057857A1

公开(公告)日：2019-02-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.