公开(公告)号：US20200348244A1

公开(公告)日：2020-11-05

申请号：US16963905

申请日：2019-01-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitish KUMAR ,  Richard QUINTANILHA ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Konstantin TSIGUTKIN ,  Willem Marie Julia Marcel COENE

IPC: G01N21/956 ,  G02F1/35 ,  G03F1/84

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

公开(公告)号：US20170357155A1

公开(公告)日：2017-12-14

申请号：US15614551

申请日：2017-06-05

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA ,  Nitish Kumar

IPC: G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G01N21/956

CPC classification number: G03F7/0002 ,  G01N21/956 ,  G03F7/0005 ,  G03F7/2004 ,  G03F7/2008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7019

Abstract: A metrology apparatus uses radiation (304) in an EUV waveband. A first detection system (333) includes a spectroscopic grating (312) and a detector (313) for capturing a spectrum of the EUV radiation after interaction with a target (T). Properties of the target are measured by analyzing the spectrum. The radiation (304) further includes radiation in other wavebands such as VUV, DUV, UV, visible and IR. A second detection system (352, 372, 382) is arranged to receive at least a portion of radiation (350) reflected by the first spectroscopic grating and to capture a spectrum (SA) in one or more of said other wavebands. The second waveband spectrum can be used to enhance accuracy of the measurement based on the EUV spectrum, and/or it can be used for a different measurement. Other types of detection, such as polarization can be used instead or in addition to spectroscopic gratings.

公开(公告)号：US20170184981A1

公开(公告)日：2017-06-29

申请号：US15388601

申请日：2016-12-22

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/88 ,  H05G2/00

CPC classification number: G03F7/70633 ,  G01N21/8806 ,  G01N21/956 ,  G01N2021/95676 ,  G03F7/70625 ,  G03F7/7065 ,  H05G2/008

Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

公开(公告)号：US20160282282A1

公开(公告)日：2016-09-29

申请号：US15079860

申请日：2016-03-24

Applicant: ASML Netherlands B.V. ,  RWTH Aachen University

Inventor： Richard QUINTANILHA ,  Serhiy DANYLYUK

IPC: G01N21/956 ,  G03F7/20 ,  G01N21/88

CPC classification number: G01N21/956 ,  G01N21/8806 ,  G01N2021/95676 ,  G03F7/2004 ,  G03F7/70625 ,  G06K9/00

Abstract: A lithographic manufacturing system produces periodic structures with feature sizes less than 10 nm and a direction of periodicity (D). A beam of radiation (1904) having a range of wavelengths in the EUV spectrum (1-100 nm or 1-150 nm) is focused into a spot (S) of around 5 μm diameter. Reflected radiation (1908) is broken into a spectrum (1910) which is captured (1913) to obtain a target spectrum signal (ST). A reference spectrum is detected (1914) to obtain a reference spectrum signal (SR). Optionally a detector (1950) is provided to obtain a further spectrum signal (SF) using radiation diffracted at first order by the grating structure of the target. The angle of incidence (α) and azimuthal angle (φ) are adjustable. The signals (ST, SR, SF) obtained at one or more angles are used to calculate measured properties of the target, for example CD and overlay.

Abstract translation: 光刻制造系统产生特征尺寸小于10nm的周期结构和周期性方向（D）。 具有EUV光谱（1-100nm或1-150nm）中的波长范围的辐射束（1904）被聚焦到大约5μm直径的光斑（S）中。 反射辐射（1908）被分解成被捕获的光谱（1910）（1913）以获得目标光谱信号（ST）。 检测参考光谱（1914）以获得参考光谱信号（SR）。 可选地，提供检测器（1950）以使用通过靶的光栅结构在第一阶段衍射的辐射来获得另外的光谱信号（SF）。 入射角（α）和方位角（φ）可调。 以一个或多个角度获得的信号（ST，SR，SF）用于计算目标的测量属性，例如CD和重叠。

公开(公告)号：US20150331336A1

公开(公告)日：2015-11-19

申请号：US14710443

申请日：2015-05-12

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA ,  Willem Marie Julia Marcel COENE

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括用于使用X射线散射测量覆盖物的大目标和用于通过可见光辐射衍射测量覆盖物的小目标。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。

公开(公告)号：US20130271740A1

公开(公告)日：2013-10-17

申请号：US13853407

申请日：2013-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA

IPC: G03F1/00 ,  G01N21/93

CPC classification number: G03F7/70308 ,  G01N21/93 ,  G01N21/956 ,  G03F1/144 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract translation: 一种方法使用光刻设备在基板上形成检查目标结构。 该方法包括形成检查对象结构的周边，以便在检查目标结构及其周围环境之间提供逐行的光学对比度过渡。 这可以通过提供目标结构的周边处的光学折射率的逐渐变化来实现。