公开(公告)号：US20150042999A1

公开(公告)日：2015-02-12

申请号：US14526032

申请日：2014-10-28

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA

IPC: G03F7/20 ,  G02B6/10 ,  G01N21/47

CPC classification number: G03F7/70191 ,  G01N21/255 ,  G01N21/47 ,  G01N2201/06113 ,  G01N2201/062 ,  G01N2201/08 ,  G02B6/0008 ,  G02B6/10 ,  G03F7/20 ,  G03F7/70058 ,  G03F7/70108 ,  G03F7/70575 ,  G03F7/70633

Abstract: An illumination system for a lithographic or inspection apparatus. A plurality of optical waveguides transmit radiation from the illumination source to an output. A switching system enables selective control of one or more subsets of the optical waveguides. An inspection method uses an illumination system and inspection and lithographic apparatuses comprise an illumination system. In one example, the optical waveguides and switching system are replaced by a plurality of parallel optical bandpass filter elements. The optical bandpass filter elements each only transmit a predetermined wavelength or a band of wavelengths of radiation. At least two of the parallel optical bandpass filter elements each being operable to transmit a different wavelength or band of wavelengths.

Abstract translation: 一种用于光刻或检查设备的照明系统。 多个光波导将辐射从照明源发射到输出。 开关系统使得能够选择性地控制光波导的一个或多个子集。 检查方法使用照明系统，检查和光刻设备包括照明系统。 在一个示例中，光波导和开关系统被多个平行光带通滤波器元件代替。 每个光带通滤波器元件仅传输预定波长或辐射波长带。 平行光带通滤波器元件中的至少两个可操作以传输不同波长或波段的波段。

公开(公告)号：US20190246480A1

公开(公告)日：2019-08-08

申请号：US16388519

申请日：2019-04-18

Applicant: ASML Netherlands B.V.

Inventor： Alexey Olegovich POLYAKOV ,  Richard QUINTANILHA ,  Vadim Yevgenyevich BANINE ,  Coen Adrianus VERSCHUREN

IPC: H05G2/00 ,  H01L21/66 ,  G03F7/20 ,  G03F1/84

CPC classification number: H05G2/00 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/7085 ,  G21K1/06 ,  H01L22/12

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

公开(公告)号：US20170102623A1

公开(公告)日：2017-04-13

申请号：US15285051

申请日：2016-10-04

Applicant: ASML Netherlands B.V.

Inventor： Maxim PISARENCO ,  Richard QUINTANILHA ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20 ,  G01B15/00 ,  G01N23/201

CPC classification number: G03F7/70625 ,  G01B15/00 ,  G01N23/201 ,  G01N2223/501 ,  G03F7/705

Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.

公开(公告)号：US20210232052A1

公开(公告)日：2021-07-29

申请号：US17051287

申请日：2019-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA ,  Scott Anderson MIDDLEBROOKS ,  Adrianus Cornelis Matheus KOOPMAN ,  Albertus Victor Gerardus MANGNUS

IPC: G03F7/20 ,  G01B11/24 ,  G01B15/04

Abstract: A method of determining a measurement sequence for an inspection tool inspecting a structure generated by a lithographic process performed by a lithographic system is presented, the method including deriving a model for the lithographic process as performed by the lithographic system, the model including a relationship between a set of system variables describing the lithographic system and an output variable representing the structure resulting of the lithographic process, determining an observability of one or more system variables in the output variable, and determining the measurement sequence for the inspection tool, based on the observability.

公开(公告)号：US20180220518A1

公开(公告)日：2018-08-02

申请号：US15747499

申请日：2016-08-03

Applicant: ASML Netherlands B.V.

Inventor： Alexey Olegovich POLYAKOV ,  Richard QUINTANILHA ,  Vadim Yevgenyevich BANINE ,  Coen Adrianus VERSCHUREN

IPC: H05G2/00 ,  H01L21/66 ,  G03F7/20 ,  G03F1/84

CPC classification number: H05G2/00 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/7085 ,  G21K1/06 ,  H01L22/12

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

公开(公告)号：US20160223476A1

公开(公告)日：2016-08-04

申请号：US15013756

申请日：2016-02-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA

IPC: G01N23/083 ,  G03F7/20

CPC classification number: G03F7/70591 ,  G03F7/70625 ,  G03F7/70633

Abstract: A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.

Abstract translation: 通过作为光刻制造系统的一部分的光刻设备将图案施加到基板。 结构以特征尺寸小于10nm生产。 目标包括具有周期性方向的一个或多个光栅。 检测器捕获一个或多个衍射光谱，以实现小角度X射线散射测量。 一个或多个属性，例如线宽（CD），例如通过重建从捕获的光谱计算。 照射方向相对于垂直于衬底的方向限定非零极角，并且当投射到衬底的平面上时，其定义相对于周期性方向的非零方位角。 通过选择合适的方位角，可以通过大的因素来提高目标的衍射效率。 这使得与已知技术相比，可以显着降低测量时间。

公开(公告)号：US20170045823A1

公开(公告)日：2017-02-16

申请号：US15230937

申请日：2016-08-08

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

CPC classification number: G03F7/7065 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615 ,  G01N2201/06113 ,  G01N2201/12 ,  G02B21/365 ,  G02B21/367 ,  G03F1/24 ,  G03F1/84 ,  G21K7/00 ,  G21K2207/00 ,  G21K2207/005

Abstract: A product structure (407, 330′) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

Abstract translation: 产品结构（407,330'）形成有缺陷（360-366）。 在产品结构（604）上提供至少部分相干的EUV辐射的点（S），以捕获由产品结构散射之后由辐射形成的至少一个衍射图案（606）。 参考数据（612）描述了标称产品结构。 从捕获的图像数据计算产品结构的至少一个合成图像（616）。 将合成图像的数据与参考数据进行比较，以识别产品结构中的缺陷（660-666）。 在一个实施例中，使用串联重叠点（S（1）-S（N））获得多个衍射图案，并且使用衍射图案和相对位移的知识来计算合成图像。 EUV辐射可以具有5至50nm范围内的波长，接近感兴趣结构的尺寸。

公开(公告)号：US20160377990A1

公开(公告)日：2016-12-29

申请号：US14901993

申请日：2014-06-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70625 ,  G01N21/95623 ,  G01N2201/061 ,  G01N2201/08 ,  G01N2201/12 ,  G03F7/70633

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716′, 716″, 716′″) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.

Abstract translation: 本发明确定了诸如晶片上的光栅的衬底（W）上的靶（30）的性质。 检查装置具有在高数值孔径物镜（L3）的光瞳平面内具有两个或更多个照明光束（716,716'，716“，716”）的照明源（702,710）。 通过物镜相对于衬底的平面从不同的入射角度照射衬底和靶。 在四个照明光束的情况下，使用四楔形光学器件（QW）分别重新引导从衬底散射的辐射的衍射级，并将衍射级与两个或更多个照明光束分离。 例如，对于四个入射方向，分离第四个第零衍射级。 在多模光纤（MF）中捕获之后，使用光谱仪（S1-S4）来测量作为波长的函数的单独重定向的第0衍射级的强度。 这可以用于确定目标的属性。

公开(公告)号：US20160320711A1

公开(公告)日：2016-11-03

申请号：US15103629

申请日：2014-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA

IPC: G03F7/20 ,  G01B11/14 ,  G01B11/06

CPC classification number: G03F7/70516 ,  G01B11/06 ,  G01B11/14 ,  G03F7/70625

Abstract: A scatterometer is used to measure a property of structures on a substrate. A target grating comprises lines arranged periodically over an distance gp in a first direction, each line individually extending a distance gL in a second direction. The grating is illuminated with a spot of radiation and diffracted radiation is detected and used to calculate a measurement of CD, side wall angle and the like. The spot defines a field of view customized to the grating such that an extent fP of the spot in said first direction is greater than distance gp while an extent fL of the spot in said second direction is less than distance gL- The grating may be smaller than conventional gratings. The calculation can be simplified and made more robust, using a mathematical model that assumes that the grating is finite in the first direction but infinite in the second direction.

Abstract translation: 使用散射仪来测量衬底上结构的性质。 目标光栅包括在第一方向上周期性地在距离gp上布置的线，每条线在第二方向上单独延伸距离gL。 光栅用辐射点照射，并且检测衍射辐射并用于计算CD，侧壁角度等的测量。 光点定义了对光栅定制的视场，使得所述第一方向上的光斑的光程fP大于距离gp，而所述第二方向上光斑的光程fL小于距离gL。光栅可以较小 比常规光栅。 使用假定光栅在第一方向是有限的，而在第二方向上是无限的数学模型，可以简化计算并使其变得更加鲁棒。

公开(公告)号：US20160062247A1

公开(公告)日：2016-03-03

申请号：US14934734

申请日：2015-11-06

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA

IPC: G03F7/20

CPC classification number: G03F7/70308 ,  G01N21/93 ,  G01N21/956 ,  G03F1/144 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract translation: 一种方法使用光刻设备在基板上形成检查目标结构。 该方法包括形成检查对象结构的周边，以便在检查目标结构及其周围环境之间提供逐行的光学对比度过渡。 这可以通过提供目标结构的周边处的光学折射率的逐渐变化来实现。