公开(公告)号：US11106141B2

公开(公告)日：2021-08-31

申请号：US16495119

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US10962886B2

公开(公告)日：2021-03-30

申请号：US16067303

申请日：2016-12-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66

Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US10459345B2

公开(公告)日：2019-10-29

申请号：US15553106

申请日：2016-02-23

Applicant: ASML Netherlands B.V.

Inventor： Stefan Hunsche ,  Chiou-Hung Jang ,  Marinus Jochemsen ,  Vito Tomasello

IPC: G06F17/50 ,  G03F7/20

Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.

公开(公告)号：US11520239B2

公开(公告)日：2022-12-06

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11314174B2

公开(公告)日：2022-04-26

申请号：US16645672

申请日：2018-08-03

Applicant: ASML Netherlands B.V.

Inventor： Laurentius Cornelius De Winter ,  Roland Pieter Stolk ,  Frank Staals ,  Anton Bernhard Van Oosten ,  Paul Christiaan Hinnen ,  Marinus Jochemsen ,  Thomas Theeuwes ,  Eelco Van Setten

IPC: G03F7/20 ,  G03F1/24 ,  G03F1/44

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：US20210389684A1

公开(公告)日：2021-12-16

申请号：US17411107

申请日：2021-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US11067902B2

公开(公告)日：2021-07-20

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick Warnaar ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US11048174B2

公开(公告)日：2021-06-29

申请号：US16076231

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  Lam Research Corporation

Inventor： Michael Kubis ,  Marinus Jochemsen ,  Richard Stephen Wise ,  Nader Shamma ,  Girish Anant Dixit ,  Liesbeth Reijnen ,  Ekaterina Mikhailovna Viatkina ,  Melisa Luca ,  Johannes Catharinus Hubertus Mulkens

IPC: G03F7/20 ,  G01N21/47

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

公开(公告)号：US10394136B2

公开(公告)日：2019-08-27

申请号：US15763376

申请日：2016-09-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Marinus Jochemsen

IPC: G03F7/20

Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.

公开(公告)号：US12228862B2

公开(公告)日：2025-02-18

申请号：US18207732

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/00 ,  G06F30/398 ,  H01L21/66

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.