公开(公告)号：US20240345569A1

公开(公告)日：2024-10-17

申请号：US18674537

申请日：2024-05-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Edo Maria HULSEBOS ,  Roy WERKMAN ,  Junru RUAN

IPC: G05B19/418 ,  G03F7/00 ,  G05B13/02 ,  G06N3/044

CPC classification number: G05B19/41875 ,  G03F7/70508 ,  G03F7/70525 ,  G05B13/027 ,  G05B19/41885 ,  G06N3/044 ,  G05B2219/33025 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20240310738A1

公开(公告)日：2024-09-19

申请号：US18571118

申请日：2022-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Sarathi ROY

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/706837 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/706841 ,  G03F9/7073

Abstract: A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.

公开(公告)号：US20240184254A1

公开(公告)日：2024-06-06

申请号：US18287613

申请日：2022-04-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Sarathi ROY ,  Daan MANNEKE

IPC: G05B13/02 ,  G03F7/00

CPC classification number: G05B13/027 ,  G03F7/705 ,  G03F7/70525

Abstract: A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20220155698A1

公开(公告)日：2022-05-19

申请号：US17440251

申请日：2020-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Kevin VAN DE RUIT ,  Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG

IPC: G03F9/00 ,  G03F7/20

Abstract: A method of determining a set of metrology point locations, the set including a subset of potential metrology point locations on a substrate, the method including: determining a relation between noise distributions associated with a plurality of the potential metrology point locations using existing knowledge; and using the determined relation and a model associated with the substrate to determine the set.

公开(公告)号：US20210333785A1

公开(公告)日：2021-10-28

申请号：US17367901

申请日：2021-07-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Edo Maria HULSEBOS ,  Roy WERKMAN ,  Junru RUAN

IPC: G05B19/418 ,  G03F7/20 ,  G05B13/02 ,  G06N3/04

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20210271171A1

公开(公告)日：2021-09-02

申请号：US17055215

申请日：2019-04-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Svetla Petrova MATOVA ,  Jochem Sebastiaan WILDENBERG ,  Roy WERKMAN ,  Luc ROUMEN

IPC: G03F7/20

Abstract: A method for estimating a parameter across a region on a substrate, the region being divided into a plurality of sub-regions, the method including: obtaining values of the parameter for at least two sub-regions out of the plurality of sub-regions; and estimating the parameter for a position on the region by evaluation of a function having said values of the parameter as input values, wherein the function: a) has piecewise defined base functions, wherein a single base function is defined across a sub-region; and b) is continuous between one or more adjacent sub-regions of the at least two sub-regions within the region.

公开(公告)号：US20180173118A1

公开(公告)日：2018-06-21

申请号：US15736451

申请日：2016-05-27

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Jens STÄCKER ,  Koenraad Remi André Maria SCHREEL ,  Roy WERKMAN

IPC: G03F9/00 ,  G03F7/20 ,  G05B19/4097

CPC classification number: G03F9/7019 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633 ,  G05B19/4097 ,  G05B2219/35012 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

公开(公告)号：US20240036479A1

公开(公告)日：2024-02-01

申请号：US18281614

申请日：2022-03-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Manouk RIJPSTRA

IPC: G03F7/00

CPC classification number: G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

Abstract: A method of optimizing a target layout for a patterning device and a sampling scheme for measuring the targets of the target layout exposed on a substrate, the method including co-optimizing the target layout and the sampling scheme to obtain an optimized target layout for the patterning device and an optimized sampling scheme for measuring the targets of the optimized target layout exposed on a substrate.

公开(公告)号：US20220252988A1

公开(公告)日：2022-08-11

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Simon Philip Spencer HASTINGS ,  Jeffrey Thomas ZIEBARTH ,  Samee Ur REHMAN ,  Davit HARUTYUNYAN ,  Chenxi LIN ,  Yana CHENG

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US20220236647A1

公开(公告)日：2022-07-28

申请号：US17635290

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Cornelis Johannes Henricus LAMBREGTS ,  Amir Bin ISMAIL ,  Rizvi RAHMAN ,  Allwyn BOUSTHEEN ,  Raheleh PISHKARI ,  Everhardus Cornelis MOS ,  Ekaterina Mikhailovna VIATKINA ,  Roy WERKMAN ,  Ralph BRINKHOF

IPC: G03F7/20

Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.