公开(公告)号：US12249583B2

公开(公告)日：2025-03-11

申请号：US18234300

申请日：2023-08-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Min Lung Huang ,  Huang-Hsien Chang ,  Tsung-Tang Tsai ,  Ching-Ju Chen

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367 ,  H01L23/538

Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.

公开(公告)号：US11894340B2

公开(公告)日：2024-02-06

申请号：US16685899

申请日：2019-11-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Min Lung Huang ,  Huang-Hsien Chang ,  Tsung-Tang Tsai ,  Ching-Ju Chen

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/16 ,  H01L23/00 ,  H01L21/78 ,  H01L25/00 ,  H01L23/498

CPC classification number: H01L25/0652 ,  H01L21/78 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/562 ,  H01L25/50

Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.

公开(公告)号：US11430750B2

公开(公告)日：2022-08-30

申请号：US16425702

申请日：2019-05-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung Huang ,  Min Lung Huang ,  Yuh-Shan Su

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01Q1/22

Abstract: A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.

公开(公告)号：US11211325B2

公开(公告)日：2021-12-28

申请号：US16696825

申请日：2019-11-26

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung Huang ,  Yan Wen Chung ,  Min Lung Huang

IPC: H01L23/522 ,  H01L23/498 ,  H01L23/31 ,  H01L21/768 ,  H01L21/56 ,  H01L21/027 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor package may include a first substrate and a second substrate, a redistribution layer (RDL), a first conductive via and a second conductive via. The first substrate has a first surface and a second surface opposite to the first surface. The second substrate has a first surface and a second surface opposite to the first surface. The RDL is disposed on the first surface of the first substrate and the first surface of the second substrate. The first conductive via passes through the RDL and is electrically connected to the first substrate. The second conductive via passes through the RDL and is electrically connected to the second substrate.

公开(公告)号：US11011491B2

公开(公告)日：2021-05-18

申请号：US16563701

申请日：2019-09-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shun-Tsat Tu ,  Pei-Jen Lo ,  Fong Ren Sie ,  Cheng-En Weng ,  Min Lung Huang

IPC: H01L23/00

Abstract: A semiconductor device package includes a connection structure having a first portion and a second portion extending from the first portion, the second portion having a width less than the first portion; and a dielectric layer surrounding the connection structure, wherein the dielectric layer and the second portion of the connection structure defines a space.

公开(公告)号：US10939561B1

公开(公告)日：2021-03-02

申请号：US16552792

申请日：2019-08-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung Huang ,  Min Lung Huang

IPC: H05K1/11 ,  H05K3/40 ,  H05K3/42 ,  H05K3/00 ,  H05K3/46

Abstract: A wiring structure includes a first dielectric layer, a second dielectric layer adjacent to the first dielectric layer, and a conductive region. The first dielectric layer defines a first opening, and the second dielectric layer defines a second opening. The conductive region includes a conductive via filling the first opening and the second opening. The conductive region further includes a first conductive trace embedded in the second dielectric layer and electrically connected with the conductive via. The conductive region includes a sidewall traversing through a thickness of the second dielectric layer with a substantial linear profile. A method of manufacturing a wiring structure is also disclosed.

公开(公告)号：US11508634B2

公开(公告)日：2022-11-22

申请号：US17063571

申请日：2020-10-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Min Lung Huang

IPC: H01L23/31 ,  H01L23/552

Abstract: A semiconductor package structure, an electronic device, and method for manufacturing the same are provided. The semiconductor package structure includes a wiring structure, a first electronic device, a second electronic device, and a protection material. The first electronic device is disposed on the wiring structure. The second electronic device is disposed on the wiring structure. The second electronic device defines a plurality of recesses on a first lateral side surface thereof. The protection material is disposed on the wiring structure and encapsulates the recesses of the second electronic device.

公开(公告)号：US11424212B2

公开(公告)日：2022-08-23

申请号：US16514966

申请日：2019-07-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Wei Chang ,  Shang-Wei Yeh ,  Chung-Hsi Wu ,  Min Lung Huang

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11

Abstract: A semiconductor package structure includes a conductive structure, at least one semiconductor element, an encapsulant, a redistribution structure and a plurality of bonding wires. The semiconductor element is disposed on and electrically connected to the conductive structure. The encapsulant is disposed on the conductive structure to cover the semiconductor element. The redistribution structure is disposed on the encapsulant, and includes a redistribution layer. The bonding wires electrically connect the redistribution structure and the conductive structure.

公开(公告)号：US11373956B2

公开(公告)日：2022-06-28

申请号：US16742788

申请日：2020-01-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Min Lung Huang ,  Hung-Jung Tu ,  Hsin Hsiang Wang ,  Chih-Wei Huang ,  Shiuan-Yu Lin

IPC: H01L23/538 ,  H01L23/31 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first semiconductor device, a first conductive layer and a second conductive layer. The first semiconductor device has a first conductive pad. The first conductive layer is disposed in direct contact with the first conductive pad. The first conductive layer extends along a direction substantially parallel to a surface of the first conductive pad. The second conductive layer is disposed in direct contact with the first conductive pad and spaced apart from the first conductive layer.

公开(公告)号：US11355426B2

公开(公告)日：2022-06-07

申请号：US16945429

申请日：2020-07-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung Huang ,  Min Lung Huang

IPC: H05K1/02 ,  H05K1/11 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H05K1/18

Abstract: A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are substantially arranged in a row and spaced apart from one another. The conductive through via extends through the dam portions.