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公开(公告)号：US10914970B2
公开(公告)日：2021-02-09
申请号：US16040726
申请日：2018-07-20
Applicant: Agency for Science, Technology and Research
Inventor： Lu Ding , Jinghua Teng
Abstract: A semiconductor device includes a semiconductor substrate having a metasurface layer configured with multiple pairs of finger portions in a repeating arrangement. The multiple pairs of finger portions are electrically configurable to modulate a radiation signal received by the semiconductor device. Each pair of finger portions includes first and second members where the first member is doped with a first dopant and the second member is doped with a second dopant being different to the first dopant. Any two adjacent first or second members are configured to be separated by at least deep subwavelength to enable the repeating arrangement.
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Patent Agency Ranking
公开(公告)号：US20200259564A1
公开(公告)日：2020-08-13
申请号：US16855725
申请日：2020-04-22
Applicant: Agency for Science, Technology and Research
Inventor： Ee Jin Teo , Chengyuan Yang , Jinghua Teng
IPC: H04B10/116 , H04B10/114
Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink. The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.
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公开(公告)号：US09768347B2
公开(公告)日：2017-09-19
申请号：US14787122
申请日：2014-04-28
Inventor： Ee Jin Teo , Jinghua Teng , Chengyuan Yang , Andrew Bettiol
CPC classification number: H01L33/06 , H01L33/007 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/50 , H01L2933/0016 , H01L2933/0025
Abstract: A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
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公开(公告)号：US20160087143A1
公开(公告)日：2016-03-24
申请号：US14787122
申请日：2014-04-28
Inventor： Ee Jin Teo , Jinghua Teng , Chengyuan Yang , Andrew Bettiol
CPC classification number: H01L33/06 , H01L33/007 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/50 , H01L2933/0016 , H01L2933/0025
Abstract: A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
Abstract translation: 提供了一种发光二极管器件（LED）。 LED包括衬底上的第一掺杂层，第一掺杂层上的有源层，有源层上的第二掺杂层和第二掺杂层上的金属层。 第二掺杂层在与有源层相对的表面上被图案化以限定第一部分和第二部分。 第二掺杂层的第一部分具有受限于有源层中的电子 - 空穴对的第一部分厚度，以有效地耦合到金属层和第二掺杂层的界面处的表面等离子体模式，从而增加自发发射 LED的速率。 第二掺杂层的第二部分具有足以确保在LED中形成p-n结的第二部分厚度。
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公开(公告)号：US20230015074A1
公开(公告)日：2023-01-19
申请号：US17778388
申请日：2020-11-20
Applicant: Agency for Science, Technology and Research
Inventor： Jinghua Teng , Xin Cai Wang , Xiaosong Eric Tang , Guang Hui Paul Lim , Jie Deng , Kai Dong Ye , Soo Seng Norman Ang
IPC: G02B3/00 , B23K26/364
Abstract: A method of fabricating an optical lens disclosed herein includes forming a layer of a flat lens structure on a front surface of a substrate, depositing a protective metal layer on the layer of the flat lens structure and on a back surface of the substrate, wherein the protective layer includes chromium, gold, titanium, or nickel, wherein the back surface is located opposite to and away from the front surface having the layer of the flat lens structure, irradiating the protective metal layer at the front surface with a laser to form a channel (i) through the protective metal layer, (ii) through the layer of the flat lens structure and (iii) in the substrate, removing the protective metal layer at the front surface and the back surface of the substrate, and separating the layer of the flat lens structure from the substrate to obtain the optical lens, wherein the channel has a depth defined by a thickness of the substrate remaining at the channel after irradiating the protective metal layer at the front surface with the laser. The optical lens fabricated from the method is also disclosed herein.
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公开(公告)号：US10826608B2
公开(公告)日：2020-11-03
申请号：US16855725
申请日：2020-04-22
Applicant: Agency for Science, Technology and Research
Inventor： Ee Jin Teo , Chengyuan Yang , Jinghua Teng
IPC: H04B10/00 , H04B10/116 , H04B10/114
Abstract: Various embodiments may relate to a light emitting diode (LED) communication device including a communication interface configured to couple with an electronic device. The LED communication device may also include an electrical interface electrically coupled to the communication interface. The LED communication device may further include a light emitting diode electrically coupled to the electrical interface. The electrical interface may be configured to convert data signals received from the electronic device into driving signals transmitted to the light emitting diode during uplink, and to convert sensing signals received from the light emitting diode into data signals transmitted to the electronic device during downlink. The light emitting diode may be configured to convert the driving signals received from the electrical interface into a plurality of light pulses during uplink, and to convert a plurality of light pulses received by the light emitting diode into the sensing signals during downlink.
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