摘要:
A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要:
A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.
摘要:
A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.
摘要:
A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.
摘要:
A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal received from another radio base station to which the communication signal will be hand-over so as to output one of the first and second communication signals to the associated interface circuit. The diversity hand-over processing unit transmits the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over.
摘要:
A semiconductor device comprising a memory cell which includes: a pillar-shaped semiconductor layer of a first conductive type formed on a semiconductor substrate; source and drain diffusion layers of a second conductive type formed in upper and lower portions of the pillar-shaped semiconductor layer; a semiconductor layer of the second conductive type or a cavity formed inside the pillar-shaped semiconductor layer; and a gate electrode formed on a side face of the pillar-shaped semiconductor layer via a gate insulating film, or a control gate electrode formed on the side face of the pillar-shaped semiconductor layer via a charge accumulation layer.
摘要:
A method for manufacturing a semiconductor device is provided, which is consisting of the steps of: forming a transistor on a surface region of a semiconductor substrate which is isolated by an insulating isolation region; forming an inter-layer insulation film provide with a hydrogen supplying path that reaches said isolation region on said semiconductor substrate on which said transistor is formed; and supplying hydrogen in said semiconductor substrate from said hydrogen supplying path through said isolation region by carrying out heat treatment. And also the semiconductor device is provided manufactured thereby.
摘要:
A hot water type first idle control device includes a heating chamber through which cooling water for an engine is allowed to flow, a wax case heated by the heating chamber, and a device housing in which the wax case is accommodated and retained. In the hot water type first idle control device, the heating chamber is integrally defined in the device housing to adjoin the wax case with a partition wall interposed therebetween for separating the heating chamber from the inside of the device housing. Thus, it is possible to effectively heat the wax case by hot water, while preventing the entering of the hot water into the device housing.
摘要:
A sputtering method of depositing a titanium nitride film on a titanium film in contact with a silicon at a bottom of a contact hole is provided, wherein the sputtering method is carried out at a temperature of the silicon region of not less than 450° C., so that the titanium nitride film has a compressive stress of not higher than 5×109 dyne/cm2 whereby the titanium film has such a high stability as preventing any crack upon changing the compressive stress to a tensile stress by a heat treatment.
摘要翻译:提供了在接触孔底部与硅接触的钛膜上沉积氮化钛膜的溅射方法,其中溅射方法在硅区域的温度不低于450℃下进行。 ,使得氮化钛膜的压缩应力不高于5×10 9达因/ cm 2,由此钛膜具有如通过热处理将压缩应力改变为拉伸应力时防止任何裂纹的高稳定性。
摘要:
A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.