Semiconductor device and method of manufacturing the same
    11.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07217654B2

    公开(公告)日:2007-05-15

    申请号:US10969429

    申请日:2004-10-21

    IPC分类号: H01L21/4763

    摘要: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

    摘要翻译: 一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜(6)和由低介电常数膜形成的第二层间绝缘膜(4)的工艺,形成通孔(9 )通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案(1a),使用含有胺成分的有机剥离液进行有机剥离处理,然后在第二层间绝缘膜上形成第二抗蚀剂图案(1b)。 在湿处理之后,涂覆第二抗反射涂层(2b)以便位于第二抗蚀图案下方的涂层,退火处理,等离子体处理,UV处理和有机溶剂处理中的至少一个是 进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分,从而防止第二抗蚀剂图案(1b)的分辨率的劣化。

    Semiconductor device and method of manufacturing the same
    12.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20070096331A1

    公开(公告)日:2007-05-03

    申请号:US11640349

    申请日:2006-12-18

    IPC分类号: H01L23/48

    摘要: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.

    摘要翻译: 一种制造具有镶嵌结构的半导体器件的方法包括在基板上形成第一层间绝缘膜和由低介电常数膜形成的第二层间绝缘膜的工艺,通过使用形成在第一层上绝缘膜上的第一抗蚀剂图案形成通孔 第二层间绝缘膜,使用含有胺成分的有机剥离液进行有机剥离处理,然后在第二层间绝缘膜上形成第二抗蚀剂图案。 在第二抗反射涂层涂布第二抗蚀剂图案之下的湿处理之后,涂覆第二抗蚀图案,进行退火处理,等离子体处理,UV处理和有机溶剂处理中的至少一种以除去胺 抑制在曝光时在抗蚀剂中发生的酸的催化反应的成分,从而防止第二抗蚀剂图案的分辨率的劣化。

    Photo-detector amplifier circuit for optical disk device

    公开(公告)号:US20070019517A1

    公开(公告)日:2007-01-25

    申请号:US11523017

    申请日:2006-09-19

    IPC分类号: G11B7/00

    CPC分类号: G11B7/005 G11B7/0045 G11B7/13

    摘要: A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.

    Photo-detector amplifier circuit for optical disk device
    14.
    发明授权
    Photo-detector amplifier circuit for optical disk device 失效
    用于光盘设备的光电检测放大器电路

    公开(公告)号:US07133346B2

    公开(公告)日:2006-11-07

    申请号:US10294573

    申请日:2002-11-15

    IPC分类号: G11B7/00 H01L31/00

    CPC分类号: G11B7/005 G11B7/0045 G11B7/13

    摘要: A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.

    摘要翻译: 提供了第一级放大器21和第二级放大器22和23的两级放大器。 通过切换反馈电容器Cf 1 w和反馈电阻器Rf 1 w的并联电路以及反馈电容器Cf 1 r的并联电路和反馈电阻器Rf的并联电路,在第一级放大器21中切换写入模式和再现模式 1 r。 第二级放大器23设置有并联连接的反馈电阻器Rf 22和Rf 23。 只有在再现高反射盘时,反馈电阻Rf 23才被开关晶体管QSW连接在反馈回路中。 这使得能够针对写入,低反射盘再现和高反射盘再现中的每一个适当地设置放大器增益。 结果,对于低反射盘可以获得期望的再现特性,同时以大的激光功率容纳高速写入。

    Communication system
    15.
    发明授权
    Communication system 失效
    通讯系统

    公开(公告)号:US07079513B2

    公开(公告)日:2006-07-18

    申请号:US10894060

    申请日:2004-07-20

    IPC分类号: H04Q7/00 H04L12/28

    CPC分类号: H04B7/022 H04W36/18

    摘要: A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal received from another radio base station to which the communication signal will be hand-over so as to output one of the first and second communication signals to the associated interface circuit. The diversity hand-over processing unit transmits the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over.

    摘要翻译: 通信系统包括:控制单元,开关和分配移交处理单元,连接到控制单元和开关,用于接收从输出切换指令的无线电基站接收的第一通信信号;以及第二 从另一无​​线电基站接收到通信信号的通信信号,通信信号将被切换到其中,以将第一和第二通信信号中的一个输出到相关联的接口电路。 分集处理单元将从无线基站接收到的通信信号从接收侧的移动台发送到与无线基站相关联的接口电路作为切换源,并且接口电路相关联 以无线电基站为切换目的地。

    Method for manufacturing a semiconductor device and a semiconductor device manufactured thereby
    17.
    发明申请
    Method for manufacturing a semiconductor device and a semiconductor device manufactured thereby 审中-公开
    制造半导体器件的方法及其制造的半导体器件

    公开(公告)号:US20050032320A1

    公开(公告)日:2005-02-10

    申请号:US10910992

    申请日:2004-08-04

    申请人: Takashi Yokoyama

    发明人: Takashi Yokoyama

    摘要: A method for manufacturing a semiconductor device is provided, which is consisting of the steps of: forming a transistor on a surface region of a semiconductor substrate which is isolated by an insulating isolation region; forming an inter-layer insulation film provide with a hydrogen supplying path that reaches said isolation region on said semiconductor substrate on which said transistor is formed; and supplying hydrogen in said semiconductor substrate from said hydrogen supplying path through said isolation region by carrying out heat treatment. And also the semiconductor device is provided manufactured thereby.

    摘要翻译: 提供了一种制造半导体器件的方法,其包括以下步骤:在由绝缘隔离区隔离的半导体衬底的表面区域上形成晶体管; 形成层间绝缘膜,提供到达形成所述晶体管的所述半导体衬底上的所述隔离区域的氢供应路径; 以及通过进行热处理从所述氢气供应路径通过所述隔离区域在所述半导体衬底中供应氢。 并且由此制造半导体器件。

    Hot water type first idle control device
    18.
    发明授权
    Hot water type first idle control device 有权
    热水式第一怠速控制装置

    公开(公告)号:US06523521B2

    公开(公告)日:2003-02-25

    申请号:US09741158

    申请日:2000-12-21

    IPC分类号: F02D902

    CPC分类号: F02M1/10 F02M3/06

    摘要: A hot water type first idle control device includes a heating chamber through which cooling water for an engine is allowed to flow, a wax case heated by the heating chamber, and a device housing in which the wax case is accommodated and retained. In the hot water type first idle control device, the heating chamber is integrally defined in the device housing to adjoin the wax case with a partition wall interposed therebetween for separating the heating chamber from the inside of the device housing. Thus, it is possible to effectively heat the wax case by hot water, while preventing the entering of the hot water into the device housing.

    摘要翻译: 热水型第一怠速控制装置包括:允许发动机的冷却水流动的加热室,由加热室加热的蜡壳;以及容纳和保持蜡壳的装置壳体。 在热水型第一怠速控制装置中,加热室一体地限定在装置外壳中,与蜡盒相邻,并具有插入其间的隔壁,用于将加热室与装置壳体的内部分离。 因此,可以通过热水有效地加热蜡壳,同时防止热水进入装置壳体。