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公开(公告)号：US06341516B1
公开(公告)日：2002-01-29
申请号：US09308293
申请日：1999-05-12
申请人： Shigeki Narushima , Kenichi Ide , Yasushi Dodo , Toshihiko Obata , Sadakazu Masuda , Shuichi Yamashina , Takashi Yokoyama
发明人： Shigeki Narushima , Kenichi Ide , Yasushi Dodo , Toshihiko Obata , Sadakazu Masuda , Shuichi Yamashina , Takashi Yokoyama
IPC分类号： B21B1318
CPC分类号： B21B39/12 , B21B1/024 , B21B1/42 , B21B13/18 , B21B15/0035 , B21B39/006 , B21B39/04 , B21B39/14 , B21B41/08 , B21B2203/10 , B21B2203/20 , B21J1/04 , B21J7/18
摘要： A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.
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公开(公告)号：USD981648S1
公开(公告)日：2023-03-21
申请号：US35513873
申请日：2022-01-26
申请人： Takashi Yokoyama , Naoto Kamitake
设计人： Takashi Yokoyama , Naoto Kamitake
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3.发明申请公开(公告)号：US20110124843A1
公开(公告)日：2011-05-26
申请号：US12994589
申请日：2009-05-26
申请人： Yuichi Murayama , Miyako Yoshioka , Kentaro Masujin , Hiroyuki Okada , Yoshifumi Iwamaru , Morikazu Imamura , Yuichi Matsuura , Takashi Yokoyama , Shirou Mohri
发明人： Yuichi Murayama , Miyako Yoshioka , Kentaro Masujin , Hiroyuki Okada , Yoshifumi Iwamaru , Morikazu Imamura , Yuichi Matsuura , Takashi Yokoyama , Shirou Mohri
IPC分类号： C07K1/02
CPC分类号： C07K14/47 , G01N33/6896 , G01N2800/2828
摘要： A method for efficiently amplifying abnormal prion protein (PrPSc) derived from bovine spongiform encephalopathy (BSE) is provided. Ultimately, the invention aims at eradicating the transmission of a prion disease by detecting a BSE-infected cow early and developing a method for inactivating prions and permitting early examination of prion inactivation. Provided is a method for efficiently amplifying PrPSc derived from BSE, wherein the method is based on a PMCA (protein misfolding cyclic amplification) method in which normal prion protein (PrPC) is used as a source and PrPSc is used as a seed, and PrPSc derived from BSE is amplified by stir-mixing, incubating, and sonicating both the PrPC and the PrPSc repeatedly, and wherein the method includes performing stir-mixing-incubation-sonication in the presence of a polysaccharide sulfate.
摘要翻译： 提供了一种有效地扩增源自牛海绵状脑病（BSE）的异常朊病毒蛋白（PrPSc）的方法。 最终本发明旨在通过早期检测BSE感染的牛并且开发一种灭活朊病毒的方法并允许早期检测朊病毒失活来消除朊病毒病的传播。 提供了一种高效地扩增BSE衍生的PrPSc的方法，其中该方法基于使用正常朊病毒蛋白（PrPC）作为来源并使用PrPSc作为种子的PMCA（蛋白质错误折叠循环扩增）法，PrPSc 通过重复搅拌，孵育和超声处理PrPC和PrPSc来扩增来自BSE的片段，并且其中所述方法包括在多糖硫酸盐存在下进行搅拌 - 温育超声处理。
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公开(公告)号：US20090263665A1
公开(公告)日：2009-10-22
申请号：US12375619
申请日：2007-04-06
申请人： Takashi Kamiike , Takashi Yokoyama
发明人： Takashi Kamiike , Takashi Yokoyama
CPC分类号： B29C41/22 , B29C41/042 , B29K2995/0018 , B29L2031/7232 , Y10T428/31551
摘要： A luminescent product molded by centrifugal molding which is inhibited from curling and has a white layer for improving phosphorescent performance. The product comprises: a hiding layer formed from a first mixture which is a mixture of a first thermosetting resin and a pigment by subjecting the mixture to centrifugal molding with heating; a phosphorescent layer obtained from a second mixture which is a mixture of a second thermosetting resin and a phosphorescent pigment having a higher specific gravity than the second thermosetting resin by pouring the second mixture on the hiding layer and subjecting it to centrifugal molding with heating; and a transparent layer. The phosphorescent layer is located nearly at the center of the product thickness. Thus, the product can be effectively inhibited from curling.
摘要翻译： 通过离心成型模制的发光产品被抑制卷曲，并具有白色层以提高磷光性能。 该产品包括：通过加热使混合物进行离心成型，由第一混合物形成的隐藏层，第一混合物是第一热固性树脂和颜料的混合物; 从第二混合物获得的磷光层，其是通过将第二混合物倾倒在隐藏层上并通过加热进行离心模塑而成为比例比第二热固性树脂高的第二热固性树脂和磷光颜料的混合物; 和透明层。 磷光层位于产品厚度的中心附近。 因此，可以有效地抑制产品的卷曲。
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公开(公告)号：US20090104522A1
公开(公告)日：2009-04-23
申请号：US11914853
申请日：2006-05-19
申请人： Shuji Sugimoto , Fuminori Ozaki , Takashi Yokoyama
发明人： Shuji Sugimoto , Fuminori Ozaki , Takashi Yokoyama
摘要： A storage battery includes: a bottomed metal case (10) accommodating an electrolyte and a collector (7) having a flat plate connected to one side of an electrode assembly (5) containing a strip-shaped positive electrode plate (1), a strip-shaped negative electrode plate (2), and a separator (6); a sealing plate (11) sealing upside of the bottomed metal case; and a lead terminal (9) electrically connecting the sealing plate to the collector, wherein the collector has at least one projection (13) and the collector and the lead terminal are electrically connected with each other via the projection. This construction eliminates the problem of increased contact resistance between the lead terminal and the collector and realizes a storage battery having high current discharging performance in which the contact resistance is reduced.
摘要翻译： 蓄电池包括：容纳电解质的有底金属外壳（10）和具有与包含带状正电极板（1）的电极组件（5）的一侧连接的平板的集电器（7），带 形状的负极板（2）和隔膜（6）; 密封板（11），其密封有底金属壳体的上侧; 以及将密封板电连接到集电器的引线端子（9），其中集电器具有至少一个突起（13），并且集电器和引线端子经由突起彼此电连接。 这种结构消除了引线端子和集电极之间的接触电阻增加的问题，并实现了具有降低接触电阻的高电流放电性能的蓄电池。
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公开(公告)号：US20080227118A1
公开(公告)日：2008-09-18
申请号：US10585985
申请日：2005-01-21
申请人： Naoyuki Kohno , Hitoshi Uemori , Takahiro Nishibu , Kazunari Hirayasu , Yoshiteru Kobayashi , Takashi Yokoyama
发明人： Naoyuki Kohno , Hitoshi Uemori , Takahiro Nishibu , Kazunari Hirayasu , Yoshiteru Kobayashi , Takashi Yokoyama
IPC分类号： G01N33/543 , C07K17/00 , G01N33/567 , C07C315/00 , C07C61/00 , C07C29/00 , G01N33/68
CPC分类号： C07K17/02 , G01N33/543 , G01N33/6896 , G01N2800/2828
摘要： The present invention relates to a method for immobilizing a protein in a sample, which could not easily be immobilized by the conventional immobilization method, to a solid-phase; a method for quantitative determination of protein wherein an effect of inhibitory substance coexisting in a sample prepared using the immobilization method can be reduced; and a rapid and highly precise method for detecting an abnormal PrP and a method for determining BSE using the immobilization method as compared with the conventional method. The present invention provides: “a method for immobilizing a protein to a solid-phase comprising contacting the protein with the solid-phase having hydrophobic surface in the presence of a lower alcohol, and a halogenocarboxylic acid and/or a long chain alkyl sulfate, and an immobilizing reagent solution to be used therefor; a method for quantitative determination of protein comprising contacting a protein-staining solution with the solid-phase immobilized with a protein by the immobilization method, and determining a degree of color development generated thereby; an immunoblotting method wherein the solid-phase immobilized with a protein by the immobilization method is used; and a method for detecting an abnormal PrP a method for determining BSE by using the immobilization method.”
摘要翻译： 本发明涉及通过常规固定方法将样品中的蛋白质固定化为固相的方法， 用于定量测定蛋白质的方法，其中可以减少使用固定化方法制备的样品中共存的抑制物质的作用; 以及用于检测异常PrP的快速且高精度的方法以及与常规方法相比使用固定方法确定BSE的方法。 本发明提供：“将蛋白质固定在固相中的方法，包括在低级醇和卤代羧酸和/或长链烷基硫酸盐的存在下使蛋白质与具有疏水性表面的固相接触， 和用于其的固定试剂溶液;一种用于定量测定蛋白质的方法，包括通过固定方法使蛋白质染色溶液与固定有蛋白质的固相接触，并确定由此产生的显色程度;免疫印迹 使用通过固定化方法固定有蛋白质的固相的方法;以及通过使用固定化方法来检测异常PrP的方法来测定BSE的方法。
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公开(公告)号：US07304343B2
公开(公告)日：2007-12-04
申请号：US11084648
申请日：2005-03-16
申请人： Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
发明人： Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
IPC分类号： H01L29/76
CPC分类号： H01L29/66825 , H01L27/115 , H01L27/11556 , H01L29/7887 , H01L29/7923
摘要： The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.
摘要翻译： 本发明提供一种半导体存储器件，包括：第一导电类型的半导体衬底; 以及存储单元，包括：（i）形成在所述基板上的柱状半导体部，（ii）形成在所述柱状半导体部的周围的并且沿与所述半导体基板垂直的方向分割的至少两个电荷存储层，和 iii）覆盖电荷存储层的至少一部分的控制栅极，其中所述存储器单元能够保持两位或更多数据。
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公开(公告)号：US07263046B2
公开(公告)日：2007-08-28
申请号：US11523017
申请日：2006-09-19
申请人： Takanori Okuda , Takashi Yokoyama
发明人： Takanori Okuda , Takashi Yokoyama
CPC分类号： G11B7/005 , G11B7/0045 , G11B7/13
摘要： A two-stage amplifier of a first-stage amplifier 21 and second-stage amplifiers 22 and 23 is provided. A writing mode and reproducing modes are switched in the first-stage amplifier 21 by switching a parallel circuit of a feedback capacitor Cf1w and a feedback resistor Rf1w and a parallel circuit of a feedback capacitor Cf1r and a feedback resistor Rf1r. The second-stage amplifier 23 is provided with feedback resistors Rf22 and Rf23 that are connected to each other in parallel. The feedback resistor Rf23 is connected in the feedback loop by a switch transistor QSW only when reproducing a high-reflective disk. This enables an amplifier gain to be suitably set for each of writing, low-reflective disk reproducing, and high-reflective disk reproducing. As a result, desirable reproducing characteristics can be obtained for the low-reflective disk while accommodating high-speed writing with a large laser power.
摘要翻译： 提供了第一级放大器21和第二级放大器22和23的两级放大器。 通过切换反馈电容器Cf 1 w和反馈电阻器Rf 1 w的并联电路以及反馈电容器Cf 1 r的并联电路和反馈电阻器Rf的并联电路，在第一级放大器21中切换写入模式和再现模式 1 r。 第二级放大器23设置有并联连接的反馈电阻器Rf 22和Rf 23。 只有在再现高反射盘时，反馈电阻Rf 23才被开关晶体管QSW连接在反馈回路中。 这使得能够针对写入，低反射盘再现和高反射盘再现中的每一个适当地设置放大器增益。 结果，对于低反射盘可以获得期望的再现特性，同时以大的激光功率容纳高速写入。
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公开(公告)号：US07217654B2
公开(公告)日：2007-05-15
申请号：US10969429
申请日：2004-10-21
IPC分类号： H01L21/4763
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要翻译： 一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜（6）和由低介电常数膜形成的第二层间绝缘膜（4）的工艺，形成通孔（9 ）通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案（1a），使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案（1b）。 在湿处理之后，涂覆第二抗反射涂层（2b）以便位于第二抗蚀图案下方的涂层，退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一个是 进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分，从而防止第二抗蚀剂图案（1b）的分辨率的劣化。
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公开(公告)号：US20070096331A1
公开(公告)日：2007-05-03
申请号：US11640349
申请日：2006-12-18
IPC分类号： H01L23/48
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.
摘要翻译： 一种制造具有镶嵌结构的半导体器件的方法包括在基板上形成第一层间绝缘膜和由低介电常数膜形成的第二层间绝缘膜的工艺，通过使用形成在第一层上绝缘膜上的第一抗蚀剂图案形成通孔 第二层间绝缘膜，使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案。 在第二抗反射涂层涂布第二抗蚀剂图案之下的湿处理之后，涂覆第二抗蚀图案，进行退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一种以除去胺 抑制在曝光时在抗蚀剂中发生的酸的催化反应的成分，从而防止第二抗蚀剂图案的分辨率的劣化。
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