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11.发明授权Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness 失效改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法公开(公告)号：US06576385B2
公开(公告)日：2003-06-10
申请号：US09776206
申请日：2001-02-02
IPC分类号： G03F900
CPC分类号： G03F7/70558
摘要： A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool “steps” across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.
摘要翻译： 提供了补偿光致抗蚀剂厚度的跨晶片变化的方法。 该方法包括提供具有在其上形成的处理层的晶片，在处理层上方形成光致抗蚀剂层，测量多个位置处的光致抗蚀剂层的厚度，以产生多个厚度测量值，从而提供厚度 控制器的测量，其基于厚度测量确定将在光致抗蚀剂层上进行的曝光处理的曝光剂量，以及使用确定的曝光剂量对光致抗蚀剂层进行曝光处理。 当步进工具跨越晶片表面“步进”时，该曝光剂量可以在逐闪的基础上变化。 也就是说，一组闪光或每个闪光灯的曝光剂量可以响应于厚度测量而变化。
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12.发明授权Method of controlling the duration of an endpoint polishing process in a multistage polishing process 失效控制多级抛光工艺中终点抛光工艺持续时间的方法公开(公告)号：US06746958B1
公开(公告)日：2004-06-08
申请号：US09817536
申请日：2001-03-26
IPC分类号： H01L214763
CPC分类号： B24B37/013 , B24B37/042 , H01L21/7684
摘要： The present invention is directed to a method of controlling chemical mechanical polishing operations to control the duration of an endpoint polishing process. The method comprises providing a wafer having a layer of copper formed thereabove, performing a first timed polishing operation for a duration (t1) on the layer of copper at a first platen to remove a majority of the layer of copper, performing an endpoint polishing operation on the layer of copper at a second platen to remove substantially all of the layer of copper, determining a duration (t2ept) of the endpoint polishing operation performed on the layer of copper at the second platen, and determining, based upon a comparison between the determined duration (t2ept) of the endpoint polishing operation and a target value for the duration of the endpoint polishing operations, a duration (t1) of the timed polishing operation to be performed on a subsequently processed layer of copper at the first platen. In another embodiment, the invention further comprises modifying, based upon a variance between the determined duration (t2ept) of the endpoint polishing operation and a target value for the duration (t2ept) of the endpoint polishing operation, the duration (t1) of the timed polishing operation to be performed on a subsequently processed layer of copper at the first platen.
摘要翻译： 本发明涉及一种控制化学机械抛光操作以控制端点抛光工艺的持续时间的方法。 该方法包括提供具有形成在其上的铜层的晶片，在第一压板上在铜层上执行持续时间（t1）的第一定时抛光操作以去除大部分铜层，执行端点抛光操作 在第二压板上的铜层上去除基本上所有的铜层，确定在第二压板上对铜层执行的端点抛光操作的持续时间（t2
），并且基于 在终点抛光操作的确定的持续时间（t2 ）与终点抛光操作的持续时间的目标值之间进行比较，对后续处理的铜层执行的定时抛光操作的持续时间（t1） 第一个压板。 在另一个实施例中，本发明还包括基于端点抛光操作的所确定的持续时间（t2 ）与端点抛光操作的持续时间（t2 ）的目标值之间的差异来修改，持续时间 （t1）对在第一压板上的后续处理的铜层进行的定时抛光操作。 -
13.发明授权Automated variation of stepper exposure dose based upon across wafer variations in device characteristics, and system for accomplishing same 失效基于设备特性的晶片变化的步进曝光剂量的自动变化，以及用于实现其的系统公开(公告)号：US06784001B2
公开(公告)日：2004-08-31
申请号：US10094117
申请日：2002-03-08
IPC分类号： H01L2166
CPC分类号： G03F7/70483 , H01L22/20
摘要： A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates. The system comprises a metrology tool for determining an electrical performance characteristic of a plurality of semiconductor devices formed above at least one substrate, a controller that determines, based upon the determined electrical performance characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on subsequently processed substrates, and a stepper tool that performs the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.
摘要翻译： 本文公开了一种用于制造集成电路器件的新颖方法和系统。 在一个实施例中，该方法包括确定在至少一个半导体衬底上方形成的多个半导体器件的至少一个电性能特性，将确定的电性能特性提供给控制器，该控制器基于确定的电特性来确定跨衬底 将对至少一个随后处理的基板进行步进曝光处理的曝光剂量的变化，以及对随后处理的基板上的曝光剂量的跨基板变化进行步进曝光处理。 该系统包括用于确定在至少一个衬底上形成的多个半导体器件的电性能特征的计量工具，控制器，其基于确定的电性能特性确定步进曝光的曝光剂量中的跨衬底变化 在后续处理的基板上执行的处理以及执行步进曝光处理的步进工具，其包括曝光剂量对随后处理的基板的跨基板变化。
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14.发明授权公开(公告)号：US06595830B1
公开(公告)日：2003-07-22
申请号：US09817532
申请日：2001-03-26
IPC分类号： B24B5100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , H01L21/3212
摘要： The present invention is directed to a method of polishing wafers on a polishing tool comprised of first, second and third platens. The method comprises providing a wafer having a patterned layer of insulating material, a barrier metal layer, and a metal layer formed above the wafer, performing a first polishing operation on the wafer at the first platen to remove a majority of the metal layer above the barrier metal layer, and performing an endpoint polishing operation on the wafer at the second platen to remove at least some of the metal layer. The method further comprises performing a timed overpolish operation on the wafer at the second platen after the endpoint polishing operation is completed at the second platen, performing a timed polishing operation on the wafer at the third platen to remove at least some of the barrier metal layer, determining an erosion rate of the patterned layer of insulating material, providing the determined erosion rate to a controller that determines a duration of the timed overpolish operations to be performed on at least one subsequently processed wafer at the second platen, and performing the timed overpolish operation on the at least one subsequently processed wafer at the second platen for the duration determined by the controller.
摘要翻译： 本发明涉及一种在由第一，第二和第三压板构成的抛光工具上抛光晶片的方法。 该方法包括提供具有绝缘材料图案化层，阻挡金属层和形成在晶片上方的金属层的晶片，在第一压板上在晶片上执行第一抛光操作，以去除位于第一压板上方的大部分金属层 并且在所述第二压板处对所述晶片执行终点抛光操作以去除所述金属层中的至少一些。 该方法还包括在第二压板上完成终点抛光操作之后，在第二压板上对晶片进行定时过多的操作，对第三压板上的晶片进行定时抛光操作，以去除至少一些阻挡金属层 确定所述图案化绝缘材料层的侵蚀速率，将所确定的腐蚀速率提供给控制器，所述控制器确定在所述第二压板上对至少一个随后处理过的晶片执行的所述定时过度抛光操作的持续时间，以及执行所述定时过度抛光 在由控制器确定的持续时间内，在第二压板上对至少一个随后处理的晶片进行操作。
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15.发明授权Automated variation of stepper exposure dose based upon across wafer variations in device characteristics, and system for accomplishing same 有权基于设备特性的晶片变化的步进曝光剂量的自动变化，以及用于实现其的系统公开(公告)号：US06365422B1
公开(公告)日：2002-04-02
申请号：US09766737
申请日：2001-01-22
IPC分类号： H01L2166
CPC分类号： G03F7/70483 , H01L22/20
摘要： A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates. The system comprises a metrology tool for determining an electrical performance characteristic of a plurality of semiconductor devices formed above at least one substrate, a controller that determines, based upon the determined electrical performance characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on subsequently processed substrates, and a stepper tool that performs the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.
摘要翻译： 本文公开了一种用于制造集成电路器件的新颖方法和系统。 在一个实施例中，该方法包括确定在至少一个半导体衬底上方形成的多个半导体器件的至少一个电性能特性，将确定的电性能特性提供给控制器，所述控制器基于所确定的电特性确定跨衬底 将对至少一个随后处理的基板进行步进曝光处理的曝光剂量的变化，以及对随后处理的基板上的曝光剂量的跨基板变化进行步进曝光处理。 该系统包括用于确定在至少一个衬底上形成的多个半导体器件的电性能特征的计量工具，控制器，其基于确定的电性能特性确定步进曝光的曝光剂量中的跨衬底变化 在后续处理的基板上执行的处理以及执行步进曝光处理的步进工具，其包括曝光剂量对随后处理的基板的跨基板变化。
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16.发明授权Use of slurry waste composition to determine the amount of metal removed during chemical mechanical polishing, and system for accomplishing same 失效使用浆料废料组合物来确定在化学机械抛光过程中去除的金属量，以及完成相同的系统公开(公告)号：US06764868B1
公开(公告)日：2004-07-20
申请号：US09909112
申请日：2001-07-19
IPC分类号： H01L2166
CPC分类号： B24B37/013 , B24B37/042 , B24B49/00
摘要： In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer formed thereabove, performing a chemical mechanical polishing process on the layer of metal in the presence of a polishing slurry, measuring at least a concentration of a material comprising the metal layer in the polishing slurry used during said polishing process after at least some of said polishing process has been performed, and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the metal layer. In another embodiment, the present invention is directed to a system that is comprised of a chemical mechanical polishing tool for performing a chemical mechanical polishing process on a metal layer in the presence of a polishing slurry, a concentration monitor for measuring a concentration of a material comprising the metal layer in the polishing slurry after at least one of the polishing process has been performed, and a controller for receiving the measured concentration and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the layer of metal.
摘要翻译： 通常，本发明涉及一种使用浆料废料组合物来确定在化学机械抛光过程中去除的金属的量的方法和用于实现其的系统。 在一个实施方案中，该方法包括提供具有在其上形成的金属层的基材，在抛光浆料存在下对该金属层进行化学机械抛光工艺，测量至少一种包含金属层的材料的浓度 在至少一些所述抛光工艺已经进行之后，在抛光过程中使用的抛光浆料，以及至少基于所测量的包括金属层的材料的浓度，确定在抛光过程中去除的金属层的厚度。 在另一个实施例中，本发明涉及一种系统，该系统包括用于在抛光浆料存在下对金属层进行化学机械抛光工艺的化学机械抛光工具，用于测量材料浓度的浓度监测器 在至少一次抛光处理之后，在抛光浆料中包括金属层，以及控制器，用于接收测量的浓度并确定在抛光过程中除去的金属层的厚度，至少基于所测量的浓度 该材料包括金属层。
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17.发明授权公开(公告)号：US06588007B1
公开(公告)日：2003-07-01
申请号：US09753705
申请日：2001-01-03
IPC分类号： G06F1750
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A technique for processing a wafer in a semiconductor manufacturing process are disclosed. The method comprises first collecting a set of processing rate data from a multi-station processing tool, the set including process rate data from at least two stations in the processing tool. The collected processing rate data is then communicated to a controller that autonomously compares the processing rate data to determine whether to adjust a process parameter. The method then adjusts the process parameter for at least one station to match the process endpoint for the at least one station.
摘要翻译： 公开了一种在半导体制造工艺中处理晶片的技术。 该方法包括首先从多工位处理工具收集一组处理速率数据，该组包括处理工具中至少两个站的处理速率数据。 然后将收集的处理速率数据传送到控制器，该控制器自主地比较处理速率数据以确定是否调整过程参数。 该方法然后调整至少一个站的过程参数以匹配至少一个站的过程端点。
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18.发明授权Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same 有权对在工艺层上进行的化学机械抛光操作的终点进行建模和控制的方法以及用于实现其的系统公开(公告)号：US06534328B1
公开(公告)日：2003-03-18
申请号：US09909162
申请日：2001-07-19
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/05 , H01L21/67253
摘要： The present invention is generally directed to a method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and a system for accomplishing same. In one illustrative embodiment, the method comprises providing a first wafer having a process layer formed thereabove, determining a duration of an endpoint polishing process performed on the process layer on the wafer, providing a second wafer having a process layer formed thereabove, and modifying at least one parameter of the endpoint polishing process to be performed on the process layer formed above the second wafer based upon a variance between the determined duration of the endpoint polishing process performed on the process layer on the first wafer and a target value for the duration of the endpoint polishing process.
摘要翻译： 本发明一般涉及建模和控制在处理层上执行的化学机械抛光操作的终点的方法，以及用于实现其的系统。 在一个说明性实施例中，该方法包括提供具有在其上形成的处理层的第一晶片，确定在晶片上对处理层执行的端点抛光工艺的持续时间，提供具有形成在其上的处理层的第二晶片， 基于在所确定的在第一晶片上的处理层上执行的端点抛光工艺的持续时间与在第一晶片上的处理层的持续时间之间的差异，在第二晶片上形成的处理层上执行的端点抛光工艺的至少一个参数 端点抛光工艺。
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公开(公告)号：US07120514B1
公开(公告)日：2006-10-10
申请号：US09815446
申请日：2001-03-22
CPC分类号： G03F9/7034 , G03F7/70633
摘要： The present invention provides for a method and an apparatus for performing field-to-field compensation during semiconductor manufacturing. At least one semiconductor device is processed. Metrology data is collected from the processed semiconductor device. A field-to-field metrology analysis is performed based upon the metrology data. Residual-error analysis is performed based upon the field-to-field analysis.
摘要翻译： 本发明提供一种用于在半导体制造期间执行场到场补偿的方法和装置。 至少一个半导体器件被处理。 从被处理的半导体器件收集测量数据。 基于测量数据进行现场测量分析。 基于现场分析进行残差分析。
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20.发明授权Automated method of controlling photoresist develop time to control critical dimensions, and system for accomplishing same 有权控制光刻胶的自动化方法开发时间来控制关键尺寸，并实现相同的系统公开(公告)号：US06569692B1
公开(公告)日：2003-05-27
申请号：US09776087
申请日：2001-02-02
IPC分类号： G01R3126
CPC分类号： G03F7/0035 , G03F7/3021 , Y10S438/942
摘要： The present invention is directed to an automated method of controlling photoresist develop time to control critical dimensions, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension of each of a plurality of features formed in a layer of photoresist, providing the measured critical dimensions of the features, in the layer of photoresist to a controller that determines, based upon the measured critical dimensions, a duration of a photoresist develop process to be performed on a layer of photoresist formed above a subsequently processed wafer, and performing a photoresist develop process on the subsequently processed wafer for the determined duration.
摘要翻译： 本发明涉及控制光刻胶显影时间以控制关键尺寸的自动化方法，以及用于实现其的系统。 在一个实施例中，该方法包括测量在光致抗蚀剂层中形成的多个特征中的每一个的临界尺寸，将光刻胶层中的特征的测量临界尺寸提供给控制器，所述控制器基于所测量的临界值 尺寸，光致抗蚀剂的持续时间将在随后处理的晶片上形成的光致抗蚀剂层上进行，并对所确定的持续时间在随后处理的晶片上进行光刻胶显影处理。
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