公开(公告)号：US08907359B2

公开(公告)日：2014-12-09

申请号：US13124707

申请日：2009-09-16

申请人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

发明人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

IPC分类号： H01L33/60 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

公开(公告)号：US20110316028A1

公开(公告)日：2011-12-29

申请号：US13124707

申请日：2009-09-16

申请人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

发明人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

IPC分类号： H01L33/60

CPC分类号： H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

公开(公告)号：US20100258892A1

公开(公告)日：2010-10-14

申请号：US12746121

申请日：2008-12-17

申请人： Rainer Butendeich ,  Reiner Windisch

发明人： Rainer Butendeich ,  Reiner Windisch

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/02

CPC分类号： H01L31/03529 ,  H01L31/02162 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

摘要翻译： 辐射接收器具有包括第一有源区和第二有源区的半导体本体，每个半导体本体设置用于检测辐射。 第一有源区和第二有源区彼此垂直地间隔开。 隧道区域布置在第一有源区域和第二有源区域之间。 隧道区域与设置在第一有源区域和第二有源区域之间的焊盘电连接，用于半导体本体的外部电接触。 附加地示出了产生辐射接收器的方法。

公开(公告)号：US20060284192A1

公开(公告)日：2006-12-21

申请号：US10561318

申请日：2004-06-25

申请人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

发明人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/02 ,  H01S5/3086

摘要： In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

公开(公告)号：US07964890B2

公开(公告)日：2011-06-21

申请号：US11528713

申请日：2006-09-27

申请人： Andreas Plössl ,  Gertrud Kräuter ,  Rainer Butendeich

发明人： Andreas Plössl ,  Gertrud Kräuter ,  Rainer Butendeich

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/02395 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02664 ,  H01L33/0062 ,  H01L33/04 ,  H01S5/0217

摘要： Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

摘要翻译： 提出的是外延衬底，特别是用于制造基于III-V半导体的薄膜半导体芯片，其包括施加到晶片衬底并且其带隙小于周围衬底的带隙的牺牲层，以及方法 制造外延衬底。 进一步描述制备薄膜半导体芯片，特别是制造其中制备外延衬底的LED的方法，其中在所述外延衬底上生长至少一个LED结构，并且将LED结构结合到受主衬底，并且其中 通过至少部分地破坏牺牲层来释放半导体晶片，并且至少一个LED结构被分割。

公开(公告)号：US08659107B2

公开(公告)日：2014-02-25

申请号：US12746121

申请日：2008-12-17

申请人： Rainer Butendeich ,  Reiner Windisch

发明人： Rainer Butendeich ,  Reiner Windisch

IPC分类号： H01L27/148

CPC分类号： H01L31/03529 ,  H01L31/02162 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

摘要翻译： 辐射接收器具有包括第一有源区和第二有源区的半导体本体，每个半导体本体设置用于检测辐射。 第一有源区和第二有源区彼此垂直地间隔开。 隧道区域布置在第一有源区域和第二有源区域之间。 隧道区域与设置在第一有源区域和第二有源区域之间的焊盘电连接，用于半导体本体的外部电接触。 附加地示出了产生辐射接收器的方法。

公开(公告)号：US07629670B2

公开(公告)日：2009-12-08

申请号：US10561318

申请日：2004-06-25

申请人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

发明人： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

IPC分类号： H01S5/323

CPC分类号： H01L33/025 ,  H01L33/02 ,  H01S5/3086

摘要： In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

摘要翻译： 在具有包括n掺杂约束层，p掺杂约束层和设置在n掺杂约束层和p掺杂约束层之间的有源光子发射层的层结构的发射辐射的半导体部件中， 根据本发明提供了n掺杂约束层掺杂有用于产生高有源掺杂和尖锐掺杂分布的第一n掺杂剂（或两个相互不同的n掺杂剂），并且仅有源层掺杂 与第一掺杂剂不同的第二n-掺杂剂，用于改善有源层的层质量。

公开(公告)号：US20070077744A1

公开(公告)日：2007-04-05

申请号：US11528713

申请日：2006-09-27

申请人： Andreas Plossl ,  Gertrud Krauter ,  Rainer Butendeich

发明人： Andreas Plossl ,  Gertrud Krauter ,  Rainer Butendeich

IPC分类号： H01L21/28 ,  H01L21/3205 ,  G02B6/26 ,  G02B6/42 ,  H01L29/80 ,  H01L31/112

CPC分类号： H01L33/12 ,  H01L21/02395 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02664 ,  H01L33/0062 ,  H01L33/04 ,  H01S5/0217

摘要： Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.

摘要翻译： 提出的是外延衬底，特别是用于制造基于III-V半导体的薄膜半导体芯片，其包括施加到晶片衬底并且其带隙小于周围衬底的带隙的牺牲层，以及方法 制造外延衬底。 进一步描述制备薄膜半导体芯片，特别是制造其中制备外延衬底的LED的方法，其中在所述外延衬底上生长至少一个LED结构，并且将LED结构结合到受主衬底，并且其中 通过至少部分地破坏牺牲层来释放半导体晶片，并且至少一个LED结构被分割。