公开(公告)号：US07435605B2

公开(公告)日：2008-10-14

申请号：US11825895

申请日：2007-07-09

Applicant: Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

Inventor： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC: H01L21/00

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract translation: 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20070264740A1

公开(公告)日：2007-11-15

申请号：US11825895

申请日：2007-07-09

Applicant: Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

Inventor： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract translation: 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US09478945B2

公开(公告)日：2016-10-25

申请号：US14126047

申请日：2012-05-15

Applicant: Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

Inventor： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

IPC: H01L29/49 ,  H01S5/22 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01S5/22 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Abstract translation: 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。

公开(公告)号：US20060284192A1

公开(公告)日：2006-12-21

申请号：US10561318

申请日：2004-06-25

Applicant: Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

Inventor： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

IPC: H01L33/00

CPC classification number: H01L33/025 ,  H01L33/02 ,  H01S5/3086

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

公开(公告)号：US20140138703A1

公开(公告)日：2014-05-22

申请号：US14126047

申请日：2012-05-15

Applicant: Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

Inventor： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

IPC: H01S5/22 ,  H01L29/20 ,  H01L21/02 ,  H01L29/205

CPC classification number: H01S5/22 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Abstract translation: 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。

公开(公告)号：US07495249B2

公开(公告)日：2009-02-24

申请号：US10956728

申请日：2004-09-30

Applicant: Norbert Linder ,  Ines Pietzonka

Inventor： Norbert Linder ,  Ines Pietzonka

IPC: H01L29/06

CPC classification number: H01L33/30 ,  H01L33/02 ,  H01L33/06 ,  H01L33/26 ,  H01L33/28

Abstract: A radiation-emitting semiconductor with a radiation-emitting active layer having InxAlyGa1-x-yP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is described. The active layer is arranged between a first confinement layer and a second confinement layer. The layers can contain InxAlyGa1-x-yPuN1-u (0≦x≦1, 0≦y≦1, 0≦x+y≦1 and 0≦u

Abstract translation: 描述了具有In x Al y Ga 1-x-y P（0≤x≤1,0<= y <= 1,0,0 <= x + y <= 1）的辐射发射有源层的辐射发射半导体。 有源层布置在第一限制层和第二限制层之间。 这些层可以包含In x Al y Ga 1-x-y P u N 1-u（0≤x≤1,0<= y <=1,0,0≤x+y≤1且0 <= u <1），BzInxAlyGa1-xy- zPuN1-u（0≤x≤1,0<= y <= 1,0,0

公开(公告)号：US07629670B2

公开(公告)日：2009-12-08

申请号：US10561318

申请日：2004-06-25

Applicant: Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

Inventor： Rainer Butendeich ,  Norbert Linder ,  Bernd Mayer ,  Ines Pietzonka

IPC: H01S5/323

CPC classification number: H01L33/025 ,  H01L33/02 ,  H01S5/3086

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Abstract translation: 在具有包括n掺杂约束层，p掺杂约束层和设置在n掺杂约束层和p掺杂约束层之间的有源光子发射层的层结构的发射辐射的半导体部件中， 根据本发明提供了n掺杂约束层掺杂有用于产生高有源掺杂和尖锐掺杂分布的第一n掺杂剂（或两个相互不同的n掺杂剂），并且仅有源层掺杂 与第一掺杂剂不同的第二n-掺杂剂，用于改善有源层的层质量。

公开(公告)号：US20070181894A1

公开(公告)日：2007-08-09

申请号：US10567883

申请日：2004-07-30

Applicant: Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

Inventor： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/40 ,  H01L33/02

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract translation: 一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生活性区（7）的半导体层序列（4），其中半导体 层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接 ），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

公开(公告)号：US07242034B2

公开(公告)日：2007-07-10

申请号：US10770693

申请日：2004-02-02

Applicant: Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

Inventor： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC: H01L29/22

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract translation: 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20050090031A1

公开(公告)日：2005-04-28

申请号：US10770693

申请日：2004-02-02

Applicant: Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

Inventor： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC: H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/20 ,  H01L29/24 ,  H01L31/0304

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract translation: 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。