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公开(公告)号：US07511353B2
公开(公告)日：2009-03-31
申请号：US10971572
申请日：2004-10-22
申请人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
发明人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
IPC分类号： H01L29/72
CPC分类号： H01L21/263 , H01L29/32 , H01L29/6609 , H01L29/861
摘要： A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
摘要翻译： 半导体二极管（30）具有设置在阳极（32）和阴极（33）之间的阳极（32），阴极（33）和半导体体积（31）。 位于阴极（33）前方的半导体体积（31）的区域（34）内的电子迁移率和/或空穴迁移率相对于半导体体积（31）的其余部分减小。
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公开(公告)号：US08741750B2
公开(公告)日：2014-06-03
申请号：US12571037
申请日：2009-09-30
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , H01L21/3242 , H01L29/66128 , H01L29/8611
摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.
摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。
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公开(公告)号：US20100087053A1
公开(公告)日：2010-04-08
申请号：US12571037
申请日：2009-09-30
CPC分类号： H01L21/26506 , H01L21/3242 , H01L29/66128 , H01L29/8611
摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.
摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。
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公开(公告)号：US07709887B2
公开(公告)日：2010-05-04
申请号：US11604984
申请日：2006-11-28
申请人： Frank Hille , Frank Umbach , Anton Mauder , Hans-Joachim Schulze , Thomas Laska , Manfred Pfaffenlehner
发明人： Frank Hille , Frank Umbach , Anton Mauder , Hans-Joachim Schulze , Thomas Laska , Manfred Pfaffenlehner
IPC分类号： H01L29/76
CPC分类号： H01L29/7397 , H01L21/263 , H01L29/0696 , H01L29/407 , H01L29/66348
摘要： A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.
摘要翻译： 公开了制造半导体部件的半导体部件及其制造方法。 在一个实施例中，半导体部件包括第一导电类型的漂移区，第二导电类型的体区和延伸到体区的沟槽。 第一导电类型的半导体区域与漂移区域和体区域接触并且布置成与沟槽一定距离。
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公开(公告)号：US20070152268A1
公开(公告)日：2007-07-05
申请号：US11604984
申请日：2006-11-28
申请人： Frank Hille , Frank Umbach , Anton Mauder , Hans-Joachim Schulze , Thomas Laska , Manfred Pfaffenlehner
发明人： Frank Hille , Frank Umbach , Anton Mauder , Hans-Joachim Schulze , Thomas Laska , Manfred Pfaffenlehner
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7397 , H01L21/263 , H01L29/0696 , H01L29/407 , H01L29/66348
摘要： A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.
摘要翻译： 公开了制造半导体部件的半导体部件及其制造方法。 在一个实施例中，半导体部件包括第一导电类型的漂移区，第二导电类型的体区和延伸到体区的沟槽。 第一导电类型的半导体区域与漂移区域和体区域接触并且布置成与沟槽一定距离。
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公开(公告)号：US08035195B2
公开(公告)日：2011-10-11
申请号：US12126751
申请日：2008-05-23
IPC分类号： H01L29/866
CPC分类号： H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/868
摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
摘要翻译： 半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。 接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。 与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。
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公开(公告)号：US20080290466A1
公开(公告)日：2008-11-27
申请号：US12126751
申请日：2008-05-23
IPC分类号： H01L29/866 , H01L21/329
CPC分类号： H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/868
摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
摘要翻译： 半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。 接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。 与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。
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公开(公告)号：US20060030126A1
公开(公告)日：2006-02-09
申请号：US11166768
申请日：2005-06-24
IPC分类号： H01L21/78 , H01L21/301 , H01L21/46
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/78 , H01L29/167
摘要： A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not the respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.
摘要翻译： 一种用于制造半导体元件的方法包括在处理区域中形成氢相关掺杂。处理区域包括至少部分区域（i）位于包含集成半导体电路布置的内连续区域之外的区域，但不包括各自相关联的分离区 和（ii）位于包含相应的集成半导体电路装置（10）的外部连续区域中，以及相应的相关联的分离区域。
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19.发明授权Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，该半导体部件包括掩埋停止区域公开(公告)号：US07749876B2
公开(公告)日：2010-07-06
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
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20.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US07667297B2
公开(公告)日：2010-02-23
申请号：US11423026
申请日：2006-06-08
IPC分类号： H01L29/167 , H01L29/30
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。
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