Statistical peak-current management in non-volatile memory devices
    11.
    发明授权
    Statistical peak-current management in non-volatile memory devices 有权
    非易失性存储器件的统计峰值电流管理

    公开(公告)号:US09361951B2

    公开(公告)日:2016-06-07

    申请号:US14468661

    申请日:2014-08-26

    Applicant: Apple Inc.

    Abstract: A method includes, in a storage system that includes multiple memory devices, holding a definition of a given type of storage command. Multiple storage commands of the given type are executed in the memory devices, such that an actual current consumption of each storage command deviates from a nominal current waveform defined for the given type by no more than a predefined deviation, and such that each storage command is preceded by a random delay.

    Abstract translation: 一种方法包括在包括多个存储设备的存储系统中,保持给定类型的存储命令的定义。 给定类型的多个存储命令在存储器件中被执行,使得每个存储命令的实际电流消耗偏离为给定类型定义的额定电流波形不超过预定义的偏差,并且使得每个存储命令是 之前是随机延迟。

    METHOD TO ENHANCE PROGRAMMING PERFORMANCE IN MULTILEVEL NVM DEVICES
    12.
    发明申请
    METHOD TO ENHANCE PROGRAMMING PERFORMANCE IN MULTILEVEL NVM DEVICES 有权
    提高多级NVM设备编程性能的方法

    公开(公告)号:US20160070473A1

    公开(公告)日:2016-03-10

    申请号:US14479732

    申请日:2014-09-08

    Applicant: Apple Inc.

    Abstract: An apparatus includes an interface and a processor. The interface is configured to communicate with a memory device. The processor is configured to send to the memory device, via the interface, a sequence of write commands that program multiple types of memory pages that incur respective different programming durations in the memory device, while inserting in the sequence suspension periods for permitting execution of storage commands that are not part of the sequence, such that at least some of the suspension periods are followed by write commands of types that do not have a shortest programming duration among the programming durations.

    Abstract translation: 一种装置包括接口和处理器。 该接口被配置为与存储器设备通信。 处理器被配置为经由接口向存储器设备发送一系列写入命令,该命令编程在存储器设备中引起相应不同编程持续时间的多种类型的存储器页面,同时在序列中插入用于允许执行存储的暂停时段 不是序列的一部分的命令,使得至少一些暂停时间段之后是在编程持续时间中不具有最短编程持续时间的类型的写入命令。

    MULTI-PHASE PROGRAMMING SCHEMES FOR NONVOLATILE MEMORIES
    13.
    发明申请
    MULTI-PHASE PROGRAMMING SCHEMES FOR NONVOLATILE MEMORIES 有权
    非易失性存储器的多相编程方案

    公开(公告)号:US20160062907A1

    公开(公告)日:2016-03-03

    申请号:US14475609

    申请日:2014-09-03

    Applicant: Apple Inc.

    Abstract: A method for data storage includes defining an end-to-end mapping between data bits to be stored in a memory device that includes multiple memory cells and predefined programming levels. The data bits are mapped into mapped bits, so that the number of the mapped bits is smaller than the number of the data bits. The data bits are stored in the memory device by programming the mapped bits in the memory cells using a programming scheme that guarantees the end-to-end mapping. After storing the data bits, the data bits are read from the memory device in accordance with the end-to-end mapping.

    Abstract translation: 一种用于数据存储的方法包括定义要存储在包括多个存储器单元和预定义编程级别的存储器件中的数据位之间的端对端映射。 数据位被映射到映射比特中,使得映射比特的数量小于数据比特数。 通过使用保证端对端映射的编程方案对存储器单元中的映射位进行编程,将数据位存储在存储器件中。 在存储数据位之后,根据端对端映射从存储器件读取数据位。

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