公开(公告)号：US20250014878A1

公开(公告)日：2025-01-09

申请号：US18218579

申请日：2023-07-05

Applicant: Applied Materials, Inc.

Inventor： Andreas SCHMID ,  Sahiti NALLAGONDA ,  Peter MURAOKA ,  Michael T. NICHOLS ,  Denis Martin KOOSAU ,  Stephen D. PROUTY ,  Sunil SRINIVASAN ,  Pranav BADOLE

IPC: H01J37/34

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, a sliding ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the sliding ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the sliding ring. The actuating mechanism is configured to actuate the sliding ring such that the gap between the first ring component and the second ring component varies.

公开(公告)号：US20220262664A1

公开(公告)日：2022-08-18

申请号：US17174591

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Yogananda SARODE VISHWANATH ,  Steven E. BABAYAN ,  Andreas SCHMID ,  Stephen Donald PROUTY ,  Andrew Antoine NOUJAIM

IPC: H01L21/683 ,  H05K7/20

Abstract: Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

公开(公告)号：US20210296101A1

公开(公告)日：2021-09-23

申请号：US16825466

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Stephen Donald PROUTY ,  Alvaro GARCIA DE GORORDO ,  Andreas SCHMID ,  Andrew Antoine NOUJAIM

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 MΩ.

公开(公告)号：US20200335368A1

公开(公告)日：2020-10-22

申请号：US16391262

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip A. CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H03K17/955 ,  H01L21/66

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20200335312A1

公开(公告)日：2020-10-22

申请号：US16824394

申请日：2020-03-19

Applicant: Applied Materials, Inc.

Inventor： Nicholas M. KOPEC ,  Damon K. COX ,  Andreas SCHMID

IPC: H01J37/32 ,  H01L21/687

Abstract: A method and apparatus for replacing process kits that include edge rings and/or support rings in processing chambers. In one implementation, a process kit comprises a multi-segment edge ring. The multi-segment edge ring comprises a first segment, a second segment, and a first annular body. The first annular body comprises a first upper surface, a first lower surface opposite the first upper surface, a first inner surface and a first outer surface. The first segment and the second segment are connectable to form the first annular body. The first lower surface is operable to be positioned over a substrate support disposed within a processing chamber, and at least a portion of the inner surface, which is positioned between the first upper surface and the first lower surface has a diameter greater than a diameter of a substrate to be processed in the processing chamber.

公开(公告)号：US20200185248A1

公开(公告)日：2020-06-11

申请号：US16217036

申请日：2018-12-11

Applicant: Applied Materials, Inc.

Inventor： Yogananda SARODE VISHWANATH ,  Steven E. BABAYAN ,  Stephen Donald PROUTY ,  Álvaro GARCÍA DE GORORDO ,  Andreas SCHMID ,  Andrew Antoine NOUJAIM

IPC: H01L21/683 ,  H01L21/67

Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.

公开(公告)号：US20190088531A1

公开(公告)日：2019-03-21

申请号：US16103531

申请日：2018-08-14

Applicant: Applied Materials, Inc.

Inventor： Yogananda SARODE VISHWANATH ,  Steven E. BABAYAN ,  Stephen PROUTY ,  Andreas SCHMID

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

公开(公告)号：US20250075795A1

公开(公告)日：2025-03-06

申请号：US18523111

申请日：2023-11-29

Applicant: Applied Materials, Inc.

Inventor： Jonathan SIMMONS ,  Andreas SCHMID ,  Sahiti NALLAGONDA

IPC: F16J15/06 ,  H01J37/32

Abstract: Disclosed herein is a seal assembly for a substrate processing chamber and a component assembly containing the seal assembly. The seal assembly includes a ring-shaped seal member; a holder disposed radially inward of the ring-shaped seal member; and a retaining mechanism coupling the ring-shaped seal member with the holder. The component assembly includes a first component coupled with a second component via a bonding layer; a groove formed by the first component, the second component, and the bonding layer; and the seal assembly disposed in the groove.

公开(公告)号：US20240429089A1

公开(公告)日：2024-12-26

申请号：US18212672

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Peter MURAOKA ,  Sumanth BANDA ,  Andreas SCHMID ,  Sunil SRINIVASAN ,  Paul Z. WIRTH

IPC: H01L21/687 ,  G05B15/02 ,  H01J37/32 ,  H01L21/3065

Abstract: Embodiments described herein generally related to a substrate processing chamber and a method of processing substrate in a processing chamber. In one embodiment, a method of using a process kit for a substrate processing chamber disclosed herein. The method begins by positioning the substrate on a substrate support disposed in the substrate processing chamber. A plasma is formed above the substrate and a tilt and height of an edge ring is adjusted with a controller. The controller is coupled to a movement assembly having one of three linear actuators for tilting a sliding ring interfaced with the edge ring to change a direction of ions at one edge of the substrate.

公开(公告)号：US20230280150A1

公开(公告)日：2023-09-07

申请号：US18317776

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Sathyendra GHANTASALA ,  Leonid DORF ,  Evgeny KAMENETSKIY ,  Peter MURAOKA ,  Denis Martin KOOSAU ,  Rajinder DHINDSA ,  Andreas SCHMID

IPC: G01B7/06 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: G01B7/08 ,  H01L21/67069 ,  H01J37/32642 ,  H01L21/68721 ,  H01J2237/24564

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.