公开(公告)号：US12272563B2

公开(公告)日：2025-04-08

申请号：US17376337

申请日：2021-07-15

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

公开(公告)号：US20240258116A1

公开(公告)日：2024-08-01

申请号：US18101932

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Wanxing Xu ,  Lisa J. Enman ,  Aaron Dangerfield ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Mikhail Korolik ,  Bhaskar Jyoti Bhuyan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01L21/02186 ,  H01L21/02315 ,  H01L21/0234

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.

公开(公告)号：US11984325B2

公开(公告)日：2024-05-14

申请号：US17373161

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/3244 ,  H01J2237/334

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

公开(公告)号：US11798813B2

公开(公告)日：2023-10-24

申请号：US17240149

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/306 ,  C23F4/02 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/32136 ,  C23F4/02 ,  H01L21/02315 ,  H01L21/02414 ,  H01L21/3065 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32135

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

公开(公告)号：US11631589B2

公开(公告)日：2023-04-18

申请号：US17307636

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L27/1157 ,  H01J37/305

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.