公开(公告)号：US20200075321A1

公开(公告)日：2020-03-05

申请号：US16552294

申请日：2019-08-27

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Bo XIE ,  Kevin Michael CHO ,  Kang Sub YIM ,  Deenesh PADHI ,  Astha GARG

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/50

Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.

公开(公告)号：US20180315592A1

公开(公告)日：2018-11-01

申请号：US15958747

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Kang Sub YIM ,  Zhijun JIANG ,  Deenesh PADHI

IPC: H01L21/02 ,  C23C16/40

Abstract: Embodiments described herein generally relate to methods of manufacturing an oxide/polysilicon (OP) stack of a 3D memory cell for memory devices, such as NAND devices. The methods generally include treatment of the oxide and/or polysilicon materials with precursors during PECVD processes to lower the dielectric constant of the oxide and reduce the resistivity of the polysilicon. In one embodiment, the oxide material is treated with octamethylcyclotetrasiloxane (OMCTS) precursor. In another embodiment, germane (GeH4) is introduced to a PECVD process to form SixGe(1-x) films with dopant. In yet another embodiment, a plasma treatment process is used to nitridate the interface between layers of the OP stack. The precursors and plasma treatment may be used alone or in any combination to produce OP stacks with low dielectric constant oxide and low resistivity polysilicon.

公开(公告)号：US20160099167A1

公开(公告)日：2016-04-07

申请号：US14505731

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Taewan KIM ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/764 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02312 ,  H01L21/7682 ,  H01L21/76885 ,  H01L2221/1047

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Abstract translation: 本文公开了使用气隙降低层的k值的方法和由所述方法制造的装置。 本文公开的方法可以包括在衬底中的一个或多个特征上沉积含碳堆叠，在含碳堆叠之上沉积多孔介电层，以及固化衬底以使含碳堆叠挥发。 所得到的器件包括其中形成有一个或多个特征的衬底，在特征上形成的多孔介电层，其中形成有特征中的气隙。

公开(公告)号：US20160020090A1

公开(公告)日：2016-01-21

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Mahendra CHHABRA ,  Kelvin CHAN ,  Alexandros T. DEMOS ,  Priyanka DASH

IPC: H01L21/02

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

Abstract translation: 本文描述的实施方案一般涉及用UV能量处理衬底上的电介质膜的方法。 在一个实施方案中，前体膜沉积在基底上，并且前体膜包括多个致孔剂分子。 首先在第一温度下将前体膜暴露于UV能以引发交联过程。 在第一预定时间之后，将前体膜的温度升至第二温度第二预定时间以除去致孔剂分子并继续进行交联过程。 所得膜是具有改善的弹性模量和硬度的多孔低k电介质膜。

公开(公告)号：US20150368803A1

公开(公告)日：2015-12-24

申请号：US14766964

申请日：2014-02-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Kang Sub YIM ,  Mahendra CHHABRA ,  Alexandros T. DEMOS

IPC: C23C16/50 ,  C23C16/24 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/455 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/324

Abstract: A low k porous dielectric film with improved mechanical strength and methods for making the same are disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to ultraviolet (UV) radiation.

Abstract translation: 本文公开了具有改进的机械强度的低k多孔介电膜及其制造方法。 形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳 ，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中造孔等离子体去除至少一部分致孔碳并暴露多孔有机硅 层到紫外（UV）辐射。